Vincenzo Fiorentini

Overview

Best Publications

• Spontaneous polarization and piezoelectric constants of III-V nitrides

  Fabio Bernardini;Vincenzo Fiorentini;David Vanderbilt

  3953
  Citations

• Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

  O Ambacher;J Majewski;C Miskys;A Link

  1399
  Citations

• Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures

  Vincenzo Fiorentini;Fabio Bernardini;Oliver Ambacher

  1044
  Citations

• Effects of macroscopic polarization in III-V nitride multiple quantum wells

  Vincenzo Fiorentini;Vincenzo Fiorentini;Fabio Bernardini;Fabio Della Sala;Aldo Di Carlo

  690
  Citations

• First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory

  Agostino Zoroddu;Fabio Bernardini;Paolo Ruggerone;Vincenzo Fiorentini;Vincenzo Fiorentini

  622
  Citations

• MACROSCOPIC POLARIZATION AND BAND OFFSETS AT NITRIDE HETEROJUNCTIONS

  Fabio Bernardini;Vincenzo Fiorentini

  546
  Citations

• Nonlinear macroscopic polarization in III-V nitride alloys

  Fabio Bernardini;Vincenzo Fiorentini

  433
  Citations

• Extracting convergent surface energies from slab calculations

  Vincenzo Fiorentini;M Methfessel

  429
  Citations

• Spontaneous versus Piezoelectric Polarization in III–V Nitrides: Conceptual Aspects and Practical Consequences

  Fabio Bernardini;Vincenzo Fiorentini

  428
  Citations

• Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

  Fabio Della Sala;Aldo Di Carlo;Paolo Lugli;Fabio Bernardini

  389
  Citations

• Spontaneous vs. piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences

  Fabio Bernardini;Vincenzo Fiorentini

  367
  Citations

• Reconstruction mechanism of fcc transition metal (001) surfaces.

  Vincenzo Fiorentini;Michael Methfessel;Matthias Scheffler

  325
  Citations

• Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

  F. Della Sala;A. Di Carlo;P. Lugli;F. Bernardini

  302
  Citations

• Polarization-based calculation of the dielectric tensor of polar crystals

  Fabio Bernardini;Vincenzo Fiorentini;David Vanderbilt

  299
  Citations

• Accurate calculation of polarization-related quantities in semiconductors

  Fabio Bernardini;Vincenzo Fiorentini;Vincenzo Fiorentini;David Vanderbilt

  299
  Citations

• Spontaneous 2-dimensional carrier confinement at the n-type SrTiO3/LaAlO3 interface.

  Pietro Delugas;Alessio Filippetti;Vincenzo Fiorentini;Daniel I. Bilc

  259
  Citations

• Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons.

  Vincenzo Fiorentini;Michael Methfessel;Matthias Scheffler

  259
  Citations

• Theoretical evaluation of zirconia and hafnia as gate oxides for si microelectronics.

  Vincenzo Fiorentini;Gianluca Gulleri

  208
  Citations

• Dielectric scaling of the self-energy scissor operator in semiconductors and insulators.

  Vincenzo Fiorentini;Alfonso Baldereschi

  189
  Citations

• First-principles calculation of the piezoelectric tensor d⇊ of III–V nitrides

  Fabio Bernardini;Vincenzo Fiorentini

  185
  Citations

• Computational Materials Science X

  Paolo Ruggerone;Vincenzo Fiorentini;F. Meloni

  0
  Citations