World's Best Scientists 2026 revealed!
Philippe Ghosez

Philippe Ghosez

D-Index & Metrics

Materials Science

D-Index
63
Citations
25100
World Ranking
6034
National Ranking
60

Philippe Ghosez publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Philippe Ghosez sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 270 publications — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Philippe Ghosez D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Philippe Ghosez sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2018 - Fellow of American Physical Society (APS) Citation For contributions to the understanding of ferroelectricity and related phenomena in bulk and nanoscale perovskite oxides, specifically the finite size effects and imperfect screening in ferroelectric thin films and for the discovery of a new type of improper ferroelectricity

Overview

Philippe Ghosez is affiliated with the University of Liège in Belgium. Their research primarily spans the fields of Materials Science and Engineering, with a significant focus on subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics, and Atomic and Molecular Physics, and Optics.

The main topics of Ghosez's scientific work cover areas such as Ferroelectric and Piezoelectric Materials, Electronic and Structural Properties of Oxides, Magnetic and Transport Properties of Perovskites and Related Materials, Multiferroics and Related Materials, Advanced Condensed Matter Physics, Acoustic Wave Resonator Technologies, and Perovskite Materials and Applications.

Some of the recent papers authored or co-authored by Ghosez include:

  • ABINIT: Overview and focus on selected capabilities, 2020, The Journal of Chemical Physics
  • Band-Edge Orbital Engineering of Perovskite Semiconductors for Optoelectronic Applications, 2021, The Journal of Physical Chemistry Letters
  • Polar meron-antimeron networks in strained and twisted bilayers, 2023, Nature Communications
  • Length scales of interfacial coupling between metal and insulator phases in oxides, 2020, Zurich Open Repository and Archive (University of Zurich)
  • Modeling of Ferroelectric Oxide Perovskites: From First to Second Principles, 2021, Annual Review of Condensed Matter Physics

Ghosez frequently collaborates with several researchers, including Xu He, Louis Bastogne, Éric Bousquet, Jie Wang, and Huazhang Zhang.

The scientist's work is also consistently published in several key venues, such as Physical Review B, arXiv (Cornell University), The Journal of Physical Chemistry Letters, Physical Review Letters, and Physical Review Materials.

In 2018, Ghosez was recognized as a Fellow of the American Physical Society (APS) for contributions to the understanding of ferroelectricity and related phenomena in bulk and nanoscale perovskite oxides. The citation specifically mentions work related to finite size effects and imperfect screening in ferroelectric thin films and the discovery of a new type of improper ferroelectricity.

Best Publications

  • First-principles computation of material properties: the ABINIT software project

    Xavier Gonze;Jean-Michel Beuken;R. Caracas;F Detraux

  • ABINIT: First-principles approach to material and nanosystem properties

    Xavier Gonze;B. Amadon;P.-M. Anglade;Jean-Michel Beuken

  • Critical thickness for ferroelectricity in perovskite ultrathin films

    Javier Junquera;Philippe Ghosez

  • A brief introduction to the ABINIT software package

    Xavier Gonze;Gian-Marco Rignanese;Matthieu J. Verstraete;Jean-Michel Beuken

  • Interface Physics in Complex Oxide Heterostructures

    Pavlo Zubko;Stefano Gariglio;Marc Gabay;Philippe Ghosez

  • Improper ferroelectricity in perovskite oxide artificial superlattices

    Eric Bousquet;Matthew Dawber;Matthew Dawber;Nicolas Stucki;Céline Lichtensteiger

  • The Abinit project: Impact, environment and recent developments

    Xavier Gonze;Bernard Amadon;Gabriel Antonius;Frédéric Arnardi

  • Lattice dynamics of BaTiO 3 , PbTiO 3 , and PbZrO 3 : A comparative first-principles study

    Philippe Ghosez;E. Cockayne;U. V. Waghmare;K. M. Rabe

  • Ferroelectricity and tetragonality in ultrathin PbTiO3 films

    Céline Lichtensteiger;Jean-Marc Triscone;Javier Junquera;Philippe Ghosez

  • Raman and infrared spectra of multiferroic bismuth ferrite from first principles

    Patrick Hermet;Marco Goffinet;J. Kreisel;Philippe Ghosez

  • Nonlinear optical susceptibilities, Raman efficiencies, and electro-optic tensors from first-principles density functional perturbation theory

    M. Veithen;X. Gonze;Philippe Ghosez

  • ABINIT: Overview and focus on selected capabilities.

    Aldo H. Romero;Douglas C. Allan;Bernard Amadon;Gabriel Antonius

  • Microscopic model of ferroelectricity in stress-free PbTiO3 ultrathin films

    Philippe Ghosez;K. M. Rabe

  • Density-polarization Functional Theory of the Response of a Periodic Insulating Solid To An Electric-field

    X. Gonze;Philippe Ghosez;R. W. Godby

  • Understanding ferroelectricity in layered perovskites: new ideas and insights from theory and experiments

    Nicole A. Benedek;James M. Rondinelli;Hania Djani;Phillippe Ghosez

  • Spontaneous 2-dimensional carrier confinement at the n-type SrTiO3/LaAlO3 interface.

    Pietro Delugas;Alessio Filippetti;Vincenzo Fiorentini;Daniel I. Bilc

  • Engineering multiferroism in CaMnO3.

    Satadeep Bhattacharjee;Eric Bousquet;Philippe Ghosez

  • Tailoring the properties of artificially layered ferroelectric superlattices

    Matthew Dawber;Nicolas Stucki;Celine Lichtensteiger;Stefano Gariglio

  • Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States

    Daniel I. Bilc;Geoffroy Hautier;David Waroquiers;Gian-Marco Rignanese

  • First-principles study of the dielectric and dynamical properties of lithium niobate

    M. Veithen;Philippe Ghosez

  • Tunable conductivity threshold at polar oxide interfaces

    M.L. Reinle-Schmitt;C. Cancellieri;Danfeng Li;D. Fontaine

  • Improper ferroelectricity in perovskite oxide artificial superlattices

    Matthew Dawber;Nicolas Stucki;Celine Lichtensteiger;Jean-Marc Triscone

Frequent Co-Authors

Jean-Marc Triscone
Jean-Marc Triscone University of Geneva
Xavier Gonze
Xavier Gonze Université Catholique de Louvain
Karin M. Rabe
Karin M. Rabe Rutgers, The State University of New Jersey
Gertjan Koster
Gertjan Koster University of Twente
Emilio Artacho
Emilio Artacho University of Cambridge
Geoffroy Hautier
Geoffroy Hautier Dartmouth College
Peter B. Littlewood
Peter B. Littlewood University of Chicago
Engin Durgun
Engin Durgun Bilkent University
James R. Chelikowsky
James R. Chelikowsky The University of Texas at Austin
Wilfrid Prellier
Wilfrid Prellier Centre national de la recherche scientifique, CNRS

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