M. L. Alles

Overview

Best Publications

• Charge Collection and Charge Sharing in a 130 nm CMOS Technology

  O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva

  493
  Citations

• The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

  K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed

  204
  Citations

• A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

  J.S. Kauppila;A.L. Sternberg;M.L. Alles;A.M. Francis

  195
  Citations

• Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

  E. Simoen;M. Gaillardin;P. Paillet;R. A. Reed

  146
  Citations

• HBD layout isolation techniques for multiple node charge collection mitigation

  J.D. Black;A.L. Sternberg;M.L. Alles;A.F. Witulski

  139
  Citations

• Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology

  B.D. Olson;O.A. Amusan;S. Dasgupta;L.W. Massengill

  127
  Citations

• Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS

  S. DasGupta;A.F. Witulski;B.L. Bhuva;M.L. Alles

  127
  Citations

• Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies

  I.S. Esqueda;H.J. Barnaby;M.L. Alles

  121
  Citations

• Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

  D. R. Ball;J. M. Hutson;A. Javanainen;J.-M. Lauenstein

  121
  Citations

• Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing

  O.A. Amusan;L.W. Massengill;M.P. Baze;B.L. Bhuva

  104
  Citations

• Technology scaling and soft error reliability

  Lloyd W. Massengill;Bharat L. Bhuva;W. Timothy Holman;Michael L. Alles

  98
  Citations

• Single-event charge enhancement in SOI devices

  L.W. Massengill;E.V. Kerns;S.E. Kerns;M.L. Alles

  98
  Citations

• A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes

  Patrick Nsengiyumva;Dennis R. Ball;Jeffrey S. Kauppila;Nelson Tam

  92
  Citations

• Model for CMOS/SOI single-event vulnerability

  S.E. Kerns;L.W. Massengill;D.V. Kerns;M.L. Alles

  86
  Citations

• Implantation process using sub-stoichiometric, oxygen doses at different energies

  Robert P. Dolan;Bernhardt F. Cordts;Maria J. Anc;Michael L. Alles

  83
  Citations

• Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices

  En Xia Zhang;A. K. M. Newaz;Bin Wang;S. Bhandaru

  81
  Citations

• The Impact of X-Ray and Proton Irradiation on ${ m HfO}_2/{ m Hf}$ -Based Bipolar Resistive Memories

  J. S. Bi;Z. S. Han;E. X. Zhang;M. W. McCurdy

  81
  Citations

• The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

  M P King;R A Reed;R A Weller;M H Mendenhall

  80
  Citations

• Single Event Mechanisms in 90 nm Triple-Well CMOS Devices

  T. Roy;A.F. Witulski;R.D. Schrimpf;M.L. Alles

  71
  Citations

• Geometry Dependence of Total-Dose Effects in Bulk FinFETs

  I. Chatterjee;E. X. Zhang;B. L. Bhuva;R. A. Reed

  65
  Citations

• Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

  M. P. King;X. Wu;M. Eller;S. Samavedam

  65
  Citations

• Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

  J.A. Pellish;R.A. Reed;R.D. Schrimpf;M.L. Alles

  60
  Citations

• Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

  E. X. Zhang;A. K. M. Newaz;B. Wang;C. X. Zhang

  60
  Citations