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M. L. Alles

D-Index & Metrics

Engineering and Technology

D-Index
39
Citations
5614
World Ranking
7748
National Ranking
2128

M. L. Alles publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where M. L. Alles sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 228 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

M. L. Alles D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where M. L. Alles sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 39 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

M. L. Alles is affiliated with Vanderbilt University in the United States and has focused their academic work predominantly in the field of Engineering. Their research specialization centers on Electrical and Electronic Engineering, with contributions also spanning Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials, and Information Systems.

The primary research topics addressed by Alles include Radiation Effects in Electronics and Semiconductor Materials and Devices. Additional areas of investigation cover Advancements in Semiconductor Devices and Circuit Design, Silicon Carbide Semiconductor Technologies, Integrated Circuits and Semiconductor Failure Analysis, GaN-based Semiconductor Devices and Materials, and Electrostatic Discharge in Electronics.

Alles has authored numerous papers, with recent publications including the following:

  • "Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs," 2021, IEEE Transactions on Nuclear Science
  • "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes," 2023, IEEE Transactions on Nuclear Science
  • "Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes," 2023, IEEE Transactions on Nuclear Science
  • "LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices," 2024, IEEE Transactions on Nuclear Science
  • "Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors," 2021, IEEE Transactions on Nuclear Science

The main publication venues for Alles's work include:

  • IEEE Transactions on Nuclear Science
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • The International Journal of Digital Accounting Research
  • Materials Science Forum

Frequent co-authors collaborating with Alles comprise Ronald D. Schrimpf, Robert A. Reed, En Xia Zhang, Dennis R. Ball, and Daniel M. Fleetwood. These collaborative relationships are reflected in multiple publications spanning various topics related to semiconductor devices and radiation effects.

Best Publications

  • Charge Collection and Charge Sharing in a 130 nm CMOS Technology

    O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva

  • The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

    K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed

  • A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

    J.S. Kauppila;A.L. Sternberg;M.L. Alles;A.M. Francis

  • Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

    E. Simoen;M. Gaillardin;P. Paillet;R. A. Reed

  • HBD layout isolation techniques for multiple node charge collection mitigation

    J.D. Black;A.L. Sternberg;M.L. Alles;A.F. Witulski

  • Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology

    B.D. Olson;O.A. Amusan;S. Dasgupta;L.W. Massengill

  • Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS

    S. DasGupta;A.F. Witulski;B.L. Bhuva;M.L. Alles

  • Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies

    I.S. Esqueda;H.J. Barnaby;M.L. Alles

  • Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

    D. R. Ball;J. M. Hutson;A. Javanainen;J.-M. Lauenstein

  • Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing

    O.A. Amusan;L.W. Massengill;M.P. Baze;B.L. Bhuva

  • Technology scaling and soft error reliability

    Lloyd W. Massengill;Bharat L. Bhuva;W. Timothy Holman;Michael L. Alles

  • Single-event charge enhancement in SOI devices

    L.W. Massengill;E.V. Kerns;S.E. Kerns;M.L. Alles

  • A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes

    Patrick Nsengiyumva;Dennis R. Ball;Jeffrey S. Kauppila;Nelson Tam

  • Model for CMOS/SOI single-event vulnerability

    S.E. Kerns;L.W. Massengill;D.V. Kerns;M.L. Alles

  • Implantation process using sub-stoichiometric, oxygen doses at different energies

    Robert P. Dolan;Bernhardt F. Cordts;Maria J. Anc;Michael L. Alles

  • Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices

    En Xia Zhang;A. K. M. Newaz;Bin Wang;S. Bhandaru

  • The Impact of X-Ray and Proton Irradiation on ${ m HfO}_2/{ m Hf}$ -Based Bipolar Resistive Memories

    J. S. Bi;Z. S. Han;E. X. Zhang;M. W. McCurdy

  • The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

    M P King;R A Reed;R A Weller;M H Mendenhall

  • Single Event Mechanisms in 90 nm Triple-Well CMOS Devices

    T. Roy;A.F. Witulski;R.D. Schrimpf;M.L. Alles

  • Geometry Dependence of Total-Dose Effects in Bulk FinFETs

    I. Chatterjee;E. X. Zhang;B. L. Bhuva;R. A. Reed

  • Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

    M. P. King;X. Wu;M. Eller;S. Samavedam

  • Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

    J.A. Pellish;R.A. Reed;R.D. Schrimpf;M.L. Alles

  • Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

    E. X. Zhang;A. K. M. Newaz;B. Wang;C. X. Zhang

Frequent Co-Authors

Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Bharat L. Bhuva
Bharat L. Bhuva Vanderbilt University
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution
Andrew L. Sternberg
Andrew L. Sternberg Vanderbilt University
Dimitri Linten
Dimitri Linten Imec
Arthur F. Witulski
Arthur F. Witulski Vanderbilt University
John D. Cressler
John D. Cressler Georgia Institute of Technology

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Best Scientists Citing M. L. Alles

Lloyd W. Massengill

Lloyd W. Massengill

Vanderbilt University

Publications: 132

Ronald D. Schrimpf

Ronald D. Schrimpf

Vanderbilt University

Publications: 126

Bharat L. Bhuva

Bharat L. Bhuva

Vanderbilt University

Publications: 119

Robert A. Reed

Robert A. Reed

Vanderbilt University

Publications: 100

Daniel M. Fleetwood

Daniel M. Fleetwood

Vanderbilt University

Publications: 71

Robert A. Weller

Robert A. Weller

Woods Hole Oceanographic Institution

Publications: 64

John D. Cressler

John D. Cressler

Georgia Institute of Technology

Publications: 60

Dale McMorrow

Dale McMorrow

United States Naval Research Laboratory

Publications: 54

Kartik Ramaswamy

Kartik Ramaswamy

Applied Materials (United States)

Publications: 29

Andrew Nguyen

Andrew Nguyen

Applied Materials (United States)

Publications: 29

Kenneth S. Collins

Kenneth S. Collins

Applied Materials (United States)

Publications: 29

Paul E. Dodd

Paul E. Dodd

Sandia National Laboratories

Publications: 27

Hiroji Hanawa

Hiroji Hanawa

Applied Materials (United States)

Publications: 26

Arthur F. Witulski

Arthur F. Witulski

Vanderbilt University

Publications: 25

Hugh J. Barnaby

Hugh J. Barnaby

Arizona State University

Publications: 22

Marty R. Shaneyfelt

Marty R. Shaneyfelt

Sandia National Laboratories

Publications: 19

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