The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where H. J. von Bardeleben sits on this spectrum.
This scientist: 241 publications — 44th percentile
44% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where H. J. von Bardeleben sits on this spectrum.
This scientist: 43 D-Index — 5th percentile
5% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
H. J. von Bardeleben is affiliated with Sorbonne University in France and has contributed extensively to the fields of Materials Science and Engineering. Their research primarily focuses on semiconductor materials and devices, with particular attention to diamond and carbon-based materials, silicon carbide semiconductor technologies, and gallium oxide (Ga2O3) related materials.
Their work spans several key topics including semiconductor materials and devices, diamond and carbon-based materials research, silicon carbide semiconductor technologies, Ga2O3 and related materials, advanced photocatalysis techniques, ZnO doping and properties, and crystallization and solubility studies.
Von Bardeleben's recent publications include:
Frequent co-authors with whom von Bardeleben has collaborated include:
The scientist publishes regularly in journals such as:
Von Bardeleben's work covers various subfields related to their main disciplines, including materials chemistry, electrical and electronic engineering, electronic, optical and magnetic materials, renewable energy, sustainability and the environment, and mechanics of materials.
The breadth of their publication record indicates a focus on understanding and developing semiconductor materials, especially those based on silicon carbide and gallium oxide, which have relevance for various advanced electronic and optoelectronic applications.
J. C. Bourgoin;H. J. von Bardeleben;D. Stiévenard
A. Ionascut-Nedelcescu;C. Carlone;A. Houdayer;H.J. von Bardeleben
H. J. von Bardeleben;D. Stiévenard;D. Deresmes;A. Huber
N. Jedrecy;H. J. von Bardeleben;Y. Zheng;J. L. Cantin
H. J. von Bardeleben;D. Stievenard;J. C. Bourgoin;A. Huber
D. Stievenard;X. Boddaert;J. C. Bourgoin;H. J. Von Bardeleben
L. Thevenard;L. Thevenard;Catherine Gourdon;Catherine Gourdon;Jean-Yves Prieur;Jean-Yves Prieur;H.J von Bardeleben;H.J von Bardeleben
H. J. von Bardeleben;J. L. Cantin;A. Csóré;A. Gali;A. Gali
Gilles Horowitz;Abderrahim Yassar;H.J. von Bardeleben
Naima Boutroy;Yann Pernel;J.M. Rius;Florence Auger
H. J. von Bardeleben;J. L. Cantin;E. Rauls;U. Gerstmann
L. El Mir;J. El Ghoul;S. Alaya;M. Ben Salem
A I Shames;V Yu Osipov;J P Boudou;A M Panich
L. Thevenard;J. Y. Duquesne;E. Peronne;H. J. von Bardeleben
H. J. von Bardeleben;D. Stievenard;A. Grosman;C. Ortega
S. A. Zargaleh;S. A. Zargaleh;B. Eble;S. Hameau;J.-L. Cantin
L. El Mir;Z. Ben Ayadi;M. Saadoun;K. Djessas
H. J. von Bardeleben;J. L. Cantin;L. Henry;M. F. Barthe
A. Csóré;H. J. von Bardeleben;J. L. Cantin;A. Gali;A. Gali
H. J. von Bardeleben;J. L. Cantin;I. Vickridge;G. Battistig
N. Jedrecy;H. J. von Bardeleben;V. Badjeck;D. Demaille
M. Cubukcu;H. J. von Bardeleben;Kh. Khazen;J. L. Cantin
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