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H. J. von Bardeleben

H. J. von Bardeleben

D-Index & Metrics

Materials Science

D-Index
43
Citations
7143
World Ranking
12322
National Ranking
388

Overview

H. J. von Bardeleben is affiliated with Sorbonne University in France and has contributed extensively to the fields of Materials Science and Engineering. Their research primarily focuses on semiconductor materials and devices, with particular attention to diamond and carbon-based materials, silicon carbide semiconductor technologies, and gallium oxide (Ga2O3) related materials.

Their work spans several key topics including semiconductor materials and devices, diamond and carbon-based materials research, silicon carbide semiconductor technologies, Ga2O3 and related materials, advanced photocatalysis techniques, ZnO doping and properties, and crystallization and solubility studies.

Von Bardeleben's recent publications include:

  • "Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide" (2020), published in Nano Letters
  • "Enlightening the Alkali Ion Role in the Photomagnetic Effect of FeCo Prussian Blue Analogues" (2022), published in Journal of the American Chemical Society
  • "Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers" (2021), published in Materials Science in Semiconductor Processing
  • "Spin Polarization, Electron-Phonon Coupling, and Zero-Phonon Line of the NV Center in 3C-SiC" (2021), published in Nano Letters
  • "Hyperfine and nuclear quadrupole splitting of the NV ground state in 4H-SiC" (2021), published in Physical review. B./Physical review. B

Frequent co-authors with whom von Bardeleben has collaborated include:

  • Fadis F. Murzakhanov
  • G. V. Mamin
  • U. Gerstmann
  • Rodrigue Lescouëzec
  • Margarita A. Sadovnikova

The scientist publishes regularly in journals such as:

  • Journal of Applied Physics
  • The Cambridge Structural Database
  • Nano Letters
  • Physical review. B./Physical review. B
  • Frontiers in Quantum Science and Technology

Von Bardeleben's work covers various subfields related to their main disciplines, including materials chemistry, electrical and electronic engineering, electronic, optical and magnetic materials, renewable energy, sustainability and the environment, and mechanics of materials.

The breadth of their publication record indicates a focus on understanding and developing semiconductor materials, especially those based on silicon carbide and gallium oxide, which have relevance for various advanced electronic and optoelectronic applications.

Best Publications

  • Native defects in gallium arsenide

    J. C. Bourgoin;H. J. von Bardeleben;D. Stiévenard

  • Radiation hardness of gallium nitride

    A. Ionascut-Nedelcescu;C. Carlone;A. Houdayer;H.J. von Bardeleben

  • Identification of a defect in a semiconductor: EL2 in GaAs.

    H. J. von Bardeleben;D. Stiévenard;D. Deresmes;A. Huber

  • Electron paramagnetic resonance study of Zn 1-x Co x O: A predicted high-temperature ferromagnetic semiconductor

    N. Jedrecy;H. J. von Bardeleben;Y. Zheng;J. L. Cantin

  • Identification of EL2 in GaAs

    H. J. von Bardeleben;D. Stievenard;J. C. Bourgoin;A. Huber

  • Behavior of electron-irradiation-induced defects in GaAs.

    D. Stievenard;X. Boddaert;J. C. Bourgoin;H. J. Von Bardeleben

  • Surface-acoustic-wave-driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers

    L. Thevenard;L. Thevenard;Catherine Gourdon;Catherine Gourdon;Jean-Yves Prieur;Jean-Yves Prieur;H.J von Bardeleben;H.J von Bardeleben

  • NV centers in 3 C ,4 H , and 6 H silicon carbide: A variable platform for solid-state qubits and nanosensors

    H. J. von Bardeleben;J. L. Cantin;A. Csóré;A. Gali;A. Gali

  • ESR and optical spectroscopy evidence for a chain-length dependence of the charged states of thiophene oligomers. Extrapolation to polythiophene

    Gilles Horowitz;Abderrahim Yassar;H.J. von Bardeleben

  • Hydrogenated amorphous carbon film coating of PET bottles for gas diffusion barriers

    Naima Boutroy;Yann Pernel;J.M. Rius;Florence Auger

  • Identification and magneto-optical properties of the NV center in 4 H -SiC

    H. J. von Bardeleben;J. L. Cantin;E. Rauls;U. Gerstmann

  • Synthesis and luminescence properties of vanadium-doped nanosized zinc oxide aerogel

    L. El Mir;J. El Ghoul;S. Alaya;M. Ben Salem

  • Magnetic resonance tracking of fluorescent nanodiamond fabrication

    A I Shames;V Yu Osipov;J P Boudou;A M Panich

  • Irreversible magnetization switching using surface acoustic waves

    L. Thevenard;J. Y. Duquesne;E. Peronne;H. J. von Bardeleben

  • Defects in porous p-type Si: An electron-paramagnetic-resonance study.

    H. J. von Bardeleben;D. Stievenard;A. Grosman;C. Ortega

  • Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4 H -SiC

    S. A. Zargaleh;S. A. Zargaleh;B. Eble;S. Hameau;J.-L. Cantin

  • Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders

    L. El Mir;Z. Ben Ayadi;M. Saadoun;K. Djessas

  • Vacancy defects in p -type 6 H − SiC created by low-energy electron irradiation

    H. J. von Bardeleben;J. L. Cantin;L. Henry;M. F. Barthe

  • Characterization and formation of NV centers in 3 C , 4 H , and 6 H SiC: An ab initio study

    A. Csóré;H. J. von Bardeleben;J. L. Cantin;A. Gali;A. Gali

  • Proton-implantation-induced defects in n-type 6H- and 4H-SiC: An electron paramagnetic resonance study

    H. J. von Bardeleben;J. L. Cantin;I. Vickridge;G. Battistig

  • Strong magnetoelectric coupling in multiferroic Co/BaTiO 3 thin films

    N. Jedrecy;H. J. von Bardeleben;V. Badjeck;D. Demaille

  • Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys

    M. Cubukcu;H. J. von Bardeleben;Kh. Khazen;J. L. Cantin

Frequent Co-Authors

Aristide Lemaître
Aristide Lemaître University of Paris-Saclay
Ludovic Largeau
Ludovic Largeau University of Paris-Saclay
Alain Mauger
Alain Mauger Sorbonne University
Christophe Delerue
Christophe Delerue University of Lille
Lassaad El Mir
Lassaad El Mir University of Gabès
Adam Gali
Adam Gali Budapest University of Technology and Economics
Robert S. Feigelson
Robert S. Feigelson Stanford University
Nitin Samarth
Nitin Samarth Pennsylvania State University
Alexander Belyaev
Alexander Belyaev University of Southampton
Pierre Gibart
Pierre Gibart Centre national de la recherche scientifique, CNRS

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