World's Best Scientists 2026 revealed!
Richard C. Jaeger

Richard C. Jaeger

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
8662
World Ranking
4050
National Ranking
1445

Research.com Recognitions

  • 1986 - IEEE Fellow For contributions to devices technology for high-performance analog and digital computer systems.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Thermodynamics

Richard C. Jaeger focuses on Electronic engineering, Piezoresistive effect, Electrical engineering, Integrated circuit and Optoelectronics. His CMOS study in the realm of Electronic engineering connects with subjects such as Integrated injection logic. His work carried out in the field of Piezoresistive effect brings together such families of science as Die, Silicon, Stress, MOSFET and Resistor.

His study looks at the relationship between Electrical engineering and fields such as Low-power electronics, as well as how they intersect with chemical problems. His Integrated circuit research is multidisciplinary, incorporating perspectives in Mechanical engineering, Wafer and Voltage. The study incorporates disciplines such as Heterojunction bipolar transistor, Transistor and Nanotechnology in addition to Optoelectronics.

His most cited work include:

  • Introduction to microelectronic fabrication (488 citations)
  • Heat sink optimization with application to microchannels (342 citations)
  • Silicon piezoresistive stress sensors and their application in electronic packaging (265 citations)

What are the main themes of his work throughout his whole career to date?

Electronic engineering, Electrical engineering, Stress, Die and Piezoresistive effect are his primary areas of study. His Electronic engineering research is multidisciplinary, relying on both Direct digital synthesizer, Silicon-germanium, Amplifier and Integrated circuit. His Electrical engineering study frequently draws connections to other fields, such as Low-power electronics.

The concepts of his Stress study are interwoven with issues in Moisture, Electronic packaging and Shear stress. His study in Piezoresistive effect is interdisciplinary in nature, drawing from both Resistor, Wafer, Integrated circuit packaging and Silicon. His Silicon study introduces a deeper knowledge of Optoelectronics.

He most often published in these fields:

  • Electronic engineering (44.03%)
  • Electrical engineering (31.72%)
  • Stress (29.85%)

What were the highlights of his more recent work (between 2010-2020)?

  • Stress (29.85%)
  • Composite material (25.00%)
  • Piezoresistive effect (25.75%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Stress, Composite material, Piezoresistive effect, Die and Electrical engineering. He has included themes like Optoelectronics, Silicon, Shear stress, Silicon carbide and Electronic engineering in his Stress study. Richard C. Jaeger studies Optoelectronics, focusing on Integrated circuit in particular.

His studies in Piezoresistive effect integrate themes in fields like Condensed matter physics, CMOS and NMOS logic. As part of the same scientific family, Richard C. Jaeger usually focuses on Die, concentrating on Ball grid array and intersecting with Temperature cycling. Many of his research projects under Electrical engineering are closely connected to Chirp with Chirp, tying the diverse disciplines of science together.

Between 2010 and 2020, his most popular works were:

  • CMOS Sensor Arrays for High Resolution Die Stress Mapping in Packaged Integrated Circuits (31 citations)
  • Low frequency noise sources in bipolar junction transistors (28 citations)
  • An X- and Ku-Band Wideband Recursive Receiver MMIC With Gain-Reuse (18 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Thermodynamics
  • Integrated circuit

Richard C. Jaeger mainly investigates Stress, Electronic engineering, Electrical engineering, Composite material and Die. His Stress research incorporates elements of Bridge, Structural engineering, Van der Pauw method and Shear stress. He focuses mostly in the field of Electronic engineering, narrowing it down to topics relating to Transistor and, in certain cases, High impedance.

His research on Electrical engineering frequently connects to adjacent areas such as Optoelectronics. His Die research integrates issues from Piezoresistive effect and Integrated circuit packaging. Richard C. Jaeger has researched Piezoresistive effect in several fields, including Bipolar junction transistor and Silicon.

Best Publications

  • Introduction to microelectronic fabrication

    Richard C. Jaeger

  • Microelectronic Circuit Design

    Richard C. Jaeger;Travis Blalock

  • Heat sink optimization with application to microchannels

    R.W. Knight;D.J. Hall;J.S. Goodling;R.C. Jaeger

  • Silicon piezoresistive stress sensors and their application in electronic packaging

    J.C. Suhling;R.C. Jaeger

  • A high-speed clamped bit-line current-mode sense amplifier

    T.N. Blalock;R.C. Jaeger

  • Piezoresistive Stress Sensors for Structural Analysis of Electronic Packages

    D. A. Bittle;J. C. Suhling;R. E. Beaty;R. C. Jaeger

  • A 12-Bit Vernier Ring Time-to-Digital Converter in 0.13 $\mu{\hbox {m}}$ CMOS Technology

    Jianjun Yu;F.F. Dai;R.C. Jaeger

  • CMOS stress sensors on [100] silicon

    R.C. Jaeger;J.C. Suhling;R. Ramani;A.T. Bradley

  • Piezoresistive characteristics of short-channel MOSFETs on (100) silicon

    A.T. Bradley;R.C. Jaeger;J.C. Suhling;K.J. O'Connor

  • A high-speed sensing scheme for 1T dynamic RAMs utilizing the clamped bit-line sense amplifier

    T.N. Blalock;R.C. Jaeger

  • Evaluation of piezoresistive coefficient variation in silicon stress sensors using a four-point bending test fixture

    R.E. Beaty;R.C. Jaeger;J.C. Suhling;R.W. Johnson

  • Errors associated with the design, calibration and application of piezoresistive stress sensors in (100) silicon

    R.C. Jaeger;J.C. Suhling;R. Ramani

  • Comments on "An optimized output stage for MOS integrated circuits" [with reply]

    R.C. Jaeger;L.W. Linholm

  • Temperature dependent threshold behavior of depletion mode MOSFETs. Characterization and simulation

    F.H. Gaensslen;R.C. Jaeger

  • Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior

    R.C. Jaeger;F.H. Gaensslen

  • The van der Pauw stress sensor

    A. Mian;J.C. Suhling;R.C. Jaeger

  • Characterization of the Temperature Dependence of the Piezoresistive Coefficients of Silicon From ${-}150\,^{\circ}$ C to ${+}125\,^{\circ}$ C

    Chun-Hyung Cho;R.C. Jaeger;J.C. Suhling

  • Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors

    L.S. Vempati;J.D. Cressler;J.A. Babcock;R.C. Jaeger

  • Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD

    J.A. Babcock;J.D. Cressler;L.S. Vempati;S.D. Clark

  • A 12-bit vernier ring time-to-digital converter in 0.13μm CMOS technology

    Jianjun Yu;Fa Foster Dai;Richard C. Jaeger

Frequent Co-Authors

Pradeep Lall
Pradeep Lall Auburn University
John D. Cressler
John D. Cressler Georgia Institute of Technology
David L. Harame
David L. Harame IBM (United States)
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
Guofu Niu
Guofu Niu Auburn University
Charles E. Stroud
Charles E. Stroud Auburn University
Herbert Reichl
Herbert Reichl Fraunhofer Society
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)

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