World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
57
Citations
9275
World Ranking
8087
National Ranking
1995

Pirouz Pirouz publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Pirouz Pirouz sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 222 publications — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Pirouz Pirouz D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Pirouz Pirouz sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 57 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Pirouz Pirouz is affiliated with Case Western Reserve University in the United States. Their academic profile is characterized by an absence of publicly listed recent papers, co-authors, or frequent publication venues.

No specific information is available regarding Pirouz's main or subfields of study, main research topics, or book publications. Similarly, there are no recorded awards or honors associated with their name in the provided data.

Without published articles or research topics included, detailed insights into their scientific contributions or areas of expertise cannot be enumerated.

The profile reflects a limited publicly accessible academic record based on available data, focusing on affiliation but not detailing research outputs or collaborations.

Best Publications

  • Growth defects in GaN films on sapphire: The probable origin of threading dislocations

    X. J. Ning;F. R. Chien;P. Pirouz;J. W. Yang

  • Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

    Christian A. Zorman;Aaron Judah Fleischman;Andrew S. Dewa;Mehran Mehregany

  • The microstructure of SCS-6 SiC fiber

    X. J. Ning;P. Pirouz

  • Chemomechanical Polishing of Silicon Carbide

    Ling Zhou;Valerie Audurier;Pirouz Pirouz;J. Anthony Powell

  • Polytypic transformations in SiC: the role of TEM

    P. Pirouz;J.W. Yang

  • Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias

    A. Galeckas;Jan Linnros;P. Pirouz

  • Stacking fault energy of 6H-SiC and 4H-SiC single crystals

    M. H. Hong;A. V. Samant;P. Pirouz

  • Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers

    J. A. Powell;J. B. Petit;J. H. Edgar;I. G. Jenkins

  • Nucleation and growth of deformation twins: A perspective based on the double-cross-slip mechanism of deformation twinning

    K. P. D. Lagerlöf;J. Castaing;P. Pirouz;A. H. Heuer

  • Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

    Robert S. Okojie;Ming Xhang;Pirouz Pirouz;Sergey Tumakha

  • Antiphase boundaries in epitaxially grown β‐SiC

    P. Pirouz;C. M. Chorey;J. A. Powell

  • Synchroshear transformations in Laves phases

    P.M. Hazzledine;P. Pirouz

  • Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

    J. A. Powell;D. J. Larkin;L. G. Matus;W. J. Choyke

  • Bright visible photoluminescence from silica nanotube flakes prepared by the sol-gel template method

    Ming Zhang;Eugenia Ciocan;Y. Bando;K. Wada

  • Recombination-induced stacking faults : Evidence for a general mechanism in hexagonal SiC

    A. Galeckas;Jan Linnros;P. Pirouz

  • On transition temperatures in the plasticity and fracture of semiconductors

    P. Pirouz;J. L. Demenet;M. H. Hong

  • Orientation relationship between chemical vapor deposited diamond and graphite substrates

    Zhidan Li;Long Wang;Tetsuya Suzuki;Alberto Argoitia

  • HRTEM study of a Cu/Al2O3 interface

    F. Ernst;P. Pirouz;Arthur Heuer

  • The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates

    F. Ernst;P. Pirouz

  • Indentation plasticity and polarity of hardness on {111} faces of GaAs

    P. B. Hirsch;P. Pirouz;P. Pirouz;S. G. Roberts;P. D. Warren

  • Deformation mode in silicon, slip or twinning?

    P. Pirouz

Frequent Co-Authors

Arthur H. Heuer
Arthur H. Heuer Case Western Reserve University
Frank Ernst
Frank Ernst Case Western Reserve University
Yuichi Ikuhara
Yuichi Ikuhara University of Tokyo
Leonard J. Brillson
Leonard J. Brillson The Ohio State University
Wolfgang J. Choyke
Wolfgang J. Choyke University of Pittsburgh
Mehran Mehregany
Mehran Mehregany Case Western Reserve University
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara
Jan Linnros
Jan Linnros Royal Institute of Technology
Christian A. Zorman
Christian A. Zorman Case Western Reserve University
Philip G. Neudeck
Philip G. Neudeck Glenn Research Center

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