Pirouz Pirouz

Overview

Best Publications

• Growth defects in GaN films on sapphire: The probable origin of threading dislocations

  X. J. Ning;F. R. Chien;P. Pirouz;J. W. Yang

  446
  Citations

• Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

  Christian A. Zorman;Aaron Judah Fleischman;Andrew S. Dewa;Mehran Mehregany

  298
  Citations

• The microstructure of SCS-6 SiC fiber

  X. J. Ning;P. Pirouz

  288
  Citations

• Chemomechanical Polishing of Silicon Carbide

  Ling Zhou;Valerie Audurier;Pirouz Pirouz;J. Anthony Powell

  285
  Citations

• Polytypic transformations in SiC: the role of TEM

  P. Pirouz;J.W. Yang

  262
  Citations

• Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias

  A. Galeckas;Jan Linnros;P. Pirouz

  250
  Citations

• Stacking fault energy of 6H-SiC and 4H-SiC single crystals

  M. H. Hong;A. V. Samant;P. Pirouz

  235
  Citations

• Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers

  J. A. Powell;J. B. Petit;J. H. Edgar;I. G. Jenkins

  207
  Citations

• Nucleation and growth of deformation twins: A perspective based on the double-cross-slip mechanism of deformation twinning

  K. P. D. Lagerlöf;J. Castaing;P. Pirouz;A. H. Heuer

  195
  Citations

• Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

  Robert S. Okojie;Ming Xhang;Pirouz Pirouz;Sergey Tumakha

  192
  Citations

• Antiphase boundaries in epitaxially grown β‐SiC

  P. Pirouz;C. M. Chorey;J. A. Powell

  178
  Citations

• Synchroshear transformations in Laves phases

  P.M. Hazzledine;P. Pirouz

  176
  Citations

• Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

  J. A. Powell;D. J. Larkin;L. G. Matus;W. J. Choyke

  175
  Citations

• Bright visible photoluminescence from silica nanotube flakes prepared by the sol-gel template method

  Ming Zhang;Eugenia Ciocan;Y. Bando;K. Wada

  159
  Citations

• Recombination-induced stacking faults : Evidence for a general mechanism in hexagonal SiC

  A. Galeckas;Jan Linnros;P. Pirouz

  153
  Citations

• On transition temperatures in the plasticity and fracture of semiconductors

  P. Pirouz;J. L. Demenet;M. H. Hong

  152
  Citations

• Orientation relationship between chemical vapor deposited diamond and graphite substrates

  Zhidan Li;Long Wang;Tetsuya Suzuki;Alberto Argoitia

  138
  Citations

• HRTEM study of a Cu/Al2O3 interface

  F. Ernst;P. Pirouz;Arthur Heuer

  133
  Citations

• The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates

  F. Ernst;P. Pirouz

  128
  Citations

• Indentation plasticity and polarity of hardness on {111} faces of GaAs

  P. B. Hirsch;P. Pirouz;P. Pirouz;S. G. Roberts;P. D. Warren

  127
  Citations

• Deformation mode in silicon, slip or twinning?

  P. Pirouz

  124
  Citations