2026 Sven Öberg: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	52	9591	9261	105	97	306	9485

Sven Öberg publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sven Öberg sits on this spectrum.

50 publications 1,163+

This scientist: 306 publications — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Sven Öberg D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sven Öberg sits on this spectrum.

40 D-Index 165+

This scientist: 52 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Sven Öberg is affiliated with Luleå University of Technology in Sweden. Their research primarily focuses on the field of Materials Science with particular emphasis on Materials Chemistry. Their work also spans related subfields such as Geophysics, Physical and Theoretical Chemistry, and Electrical and Electronic Engineering.

Their main topics of study include:

Diamond and Carbon-based Materials Research
Electronic and Structural Properties of Oxides
High-pressure Geophysics and Materials
Crystallography and Molecular Interactions
Crystallization and Solubility Studies
X-ray Diffraction in Crystallography
Semiconductor Materials and Devices

Öberg has contributed to several scientific publications, with recent papers listed as follows:

"A theoretical study of de-charging excitations of the NV-center in diamond involving a nitrogen donor" (2020) published in New Journal of Physics
"Physical binding energies using the electron localization function in 4-hydroxyphenylboronic acid co-crystals with aza donors" (2023) published in Journal of Physics Condensed Matter
"The diamond NV-center transition energies in the vicinity of an intrinsic stacking fault" (2022) published in AIP Advances
"Neutral supercells for charged impurities by explicit acceptor/donor compensation − Defects in diamond" (2025) published in Computational Materials Science

Their frequent collaborators include:

J. Andreas Larsson
Robin Löfgren
Mayura Talwelkar Shimpi
Muhammad Sajjad
Kostiantyn V. Sopiha

Öberg's work has appeared in various publication venues such as:

New Journal of Physics
Journal of Physics Condensed Matter
Computational Materials Science
AIP Advances

Best Publications

The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex

J P Goss;R Jones;S J Breuer;P R Briddon

416
Citations
Theory of Threading Edge and Screw Dislocations in GaN

J. Elsner;R. Jones;P. K. Sitch;V. D. Porezag

399
Citations
DEEP ACCEPTORS TRAPPED AT THREADING-EDGE DISLOCATIONS IN GAN

J Elsner;J Elsner;R Jones;M I Heggie;P K Sitch

389
Citations
Oxygen and dioxygen centers in Si and Ge: Density-functional calculations

J Coutinho;R Jones;P R Briddon;Sven Öberg

277
Citations
Theory of hydrogen in diamond

J.P. Goss;R. Jones;M.I. Heggie;C.P. Ewels

214
Citations
Stacking faults in 3C-, 4H-, and 6H-SiC polytypes investigated by an ab initio supercell method

Ulf Lindefelt;Ulf Lindefelt;Hisaomi Iwata;Hisaomi Iwata;Sven Öberg;Patrick R. Briddon

202
Citations
H2* defect in crystalline silicon.

J. D. Holbech;B. Bech Nielsen;R. Jones;P. Sitch

176
Citations
Identification of the dominant nitrogen defect in silicon.

R Jones;Sven Öberg;F Berg Rasmussen;B Bech Nielsen

159
Citations
Shallow Thermal Donor Defects in Silicon.

C P Ewels;R Jones;Sven Öberg;J Miro

159
Citations
Localized electronic states around stacking faults in silicon carbide

Hisaomi Iwata;Ulf Lindefelt;Sven Öberg;Patrick R. Briddon

145
Citations
Structure and motion of basal dislocations in silicon carbide

A.T. Blumenau;A.T. Blumenau;C.J. Fall;R. Jones;Sven Öberg

138
Citations
Origin of brown coloration in diamond

L.S. Hounsome;R. Jones;P.M. Martineau;D. Fisher

137
Citations
Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon

A Resende;R Jones;Sven Öberg;P R Briddon

133
Citations
Extended defects in diamond: The interstitial platelet

J.P. Goss;B.J. Coomer;R. Jones;C.J. Fall

131
Citations
Vibrational modes and electronic properties of nitrogen defects in silicon

J.P. Goss;I. Hahn;R. Jones;P.R. Briddon

130
Citations
Degradation of boron-doped Czochralski-grown silicon solar cells

J. Adey;R. Jones;D.W. Palmer;P.R. Briddon

124
Citations
Cubic polytype inclusions in 4H–SiC

Hisaomi Iwata;Ulf Lindefelt;Sven Öberg;Patrick R. Briddon

120
Citations
Stacking faults in silicon carbide

H.P. Iwata;H.P. Iwata;U. Lindefelt;Sven Öberg;P.R. Briddon

111
Citations
Cation-site intrinsic defects in Zn-doped CdTe

A. Carvalho;A. Carvalho;A. K. Tagantsev;S. Öberg;P. R. Briddon

107
Citations
First-principles theory of nitrogen aggregates in diamond

R. Jones;Patrick Briddon;Sven Öberg

104
Citations
Effects of Dislocation Interactions: Application to the Period-Doubled Core of the 90° Partial in Silicon

Niklas Lehto;Sven Öberg

102
Citations
Interstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si

J Coutinho;R Jones;PR Briddon;S Oberg

100
Citations