World's Best Scientists 2026 revealed!
Jean-Luc Autran

Jean-Luc Autran

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
4700
World Ranking
6271
National Ranking
132

Jean-Luc Autran publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jean-Luc Autran sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 244 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jean-Luc Autran D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jean-Luc Autran sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

    Unknown

  • Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

    D. Munteanu;J.-L. Autran

  • Technology downscaling worsening radiation effects in bulk: SOI to the rescue

    Philippe Roche;Jean-Luc Autran;Gilles Gasiot;Daniela Munteanu

  • Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET's: an atomistic study

    K. Nehari;N. Cavassilas;J.L. Autran;M. Bescond

  • On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs

    Unknown

  • Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET

    Daniela Munteanu;Jean-Luc Autran;Xavier Loussier;Samuel Harrison

  • Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors

    Unknown

  • Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

    Slawosz Uznanski;Gilles Gasiot;Philippe Roche;Clement Tavernier

  • Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta 2 O 5 gate insulator

    Unknown

  • Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source

    R.A.B. Devine;Laurent Vallier;Jean-Luc Autran;P. Paillet

  • Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view

    Pascal Masson;Jean-Luc Autran;Michel Houssa;Xavier Garros

  • Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

    J.L. Autran;P. Roche;S. Sauze;G. Gasiot

  • 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

    M. Bescond;K. Nehari;J.L. Autran;N. Cavassilas

  • Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

    D. Giot;P. Roche;G. Gasiot;J.-L. Autran

  • Highly performant double gate MOSFET realized with SON process

    S. Harrison;P. Coronel;F. Leverd;R. Cerutti

  • Soft Errors : From Particles to Circuits

    Daniela Munteanu

  • Experimental Investigation on the Quasi-Ballistic Transport: Part I—Determination of a New Backscattering Coefficient Extraction Methodology

    V. Barral;T. Poiroux;J. Saint-Martin;D. Munteanu

  • Experimental Investigation on the Quasi-Ballistic Transport: Part II—Backscattering Coefficient Extraction and Link With the Mobility

    V. Barral;T. Poiroux;D. Munteanu;J.-L. Autran

  • Full-band study of current across silicon nanowire transistors

    Unknown

  • Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism

    M Bescond;Jean-Luc Autran;Daniela Munteanu;M Lannoo

Frequent Co-Authors

Daniela Munteanu
Daniela Munteanu Aix-Marseille University
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
Michel Houssa
Michel Houssa KU Leuven
Gilles Gasiot
Gilles Gasiot STMicroelectronics (Switzerland)
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Dominique Vuillaume
Dominique Vuillaume Centre national de la recherche scientifique, CNRS
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology
Marc Meuris
Marc Meuris Hasselt University
M.M. Heyns
M.M. Heyns KU Leuven

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