Jean-Luc Autran

Best Publications

• Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

  Unknown

  893
  Citations

• Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

  D. Munteanu;J.-L. Autran

  216
  Citations

• Technology downscaling worsening radiation effects in bulk: SOI to the rescue

  Philippe Roche;Jean-Luc Autran;Gilles Gasiot;Daniela Munteanu

  154
  Citations

• Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET's: an atomistic study

  K. Nehari;N. Cavassilas;J.L. Autran;M. Bescond

  150
  Citations

• On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs

  Unknown

  125
  Citations

• Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET

  Daniela Munteanu;Jean-Luc Autran;Xavier Loussier;Samuel Harrison

  110
  Citations

• Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors

  Unknown

  110
  Citations

• Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

  Slawosz Uznanski;Gilles Gasiot;Philippe Roche;Clement Tavernier

  96
  Citations

• Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta 2 O 5 gate insulator

  Unknown

  90
  Citations

• Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source

  R.A.B. Devine;Laurent Vallier;Jean-Luc Autran;P. Paillet

  90
  Citations

• Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view

  Pascal Masson;Jean-Luc Autran;Michel Houssa;Xavier Garros

  88
  Citations

• Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

  J.L. Autran;P. Roche;S. Sauze;G. Gasiot

  82
  Citations

• 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

  M. Bescond;K. Nehari;J.L. Autran;N. Cavassilas

  81
  Citations

• Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

  D. Giot;P. Roche;G. Gasiot;J.-L. Autran

  74
  Citations

• Highly performant double gate MOSFET realized with SON process

  S. Harrison;P. Coronel;F. Leverd;R. Cerutti

  68
  Citations

• Soft Errors : From Particles to Circuits

  Daniela Munteanu

  66
  Citations

• Experimental Investigation on the Quasi-Ballistic Transport: Part I—Determination of a New Backscattering Coefficient Extraction Methodology

  V. Barral;T. Poiroux;J. Saint-Martin;D. Munteanu

  62
  Citations

• Experimental Investigation on the Quasi-Ballistic Transport: Part II—Backscattering Coefficient Extraction and Link With the Mobility

  V. Barral;T. Poiroux;D. Munteanu;J.-L. Autran

  59
  Citations

• Full-band study of current across silicon nanowire transistors

  Unknown

  57
  Citations

• Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism

  M Bescond;Jean-Luc Autran;Daniela Munteanu;M Lannoo

  54
  Citations