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D-Index & Metrics

Materials Science

D-Index
47
Citations
7323
World Ranking
11216
National Ranking
623

Peter Kratzer publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Peter Kratzer sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 212 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Peter Kratzer D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Peter Kratzer sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 47 D-Index — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Peter Kratzer is affiliated with the University of Duisburg-Essen in Germany. Their research primarily focuses on materials science and physics, with significant contributions to the fields of materials chemistry, atomic and molecular physics, and optics. Their work also spans electrical and electronic engineering, electronic, optical and magnetic materials, and condensed matter physics.

The main topics covered in their research include 2D materials and applications, chalcogenide semiconductor thin films, MXene and MAX phase materials, perovskite materials and applications, spectroscopy and quantum chemical studies, theoretical and computational physics, and molecular junctions and nanostructures.

Their recent publications illustrate a focus on density functional theory (DFT) studies, adsorption phenomena, and magnetic interactions in layered materials. Selected recent papers by Peter Kratzer are as follows:

  • Chemisorption and Physisorption at the Metal/Organic Interface: Bond Energies of Naphthalene and Azulene on Coinage Metal Surfaces, 2020, The Journal of Physical Chemistry C
  • Orbital and magnetic ordering in single-layer FePS3: A DFT+U study, 2023, Physical Review B
  • All-electron real-time and imaginary-time time-dependent density functional theory within a numeric atom-centered basis function framework, 2021, The Journal of Chemical Physics
  • Structural defects in a Janus MoSSe monolayer: A density functional theory study, 2022, Physical Review B
  • Magnetic exchange interactions in bilayer CrX3 (X = Cl, Br, and I): A critical assessment of the DFT+U approach, 2021, Physical Review B

Peter Kratzer frequently publishes in several venues with an emphasis on open-access and peer-reviewed journals. Notable publication venues include:

  • arXiv (Cornell University)
  • Physical Review B
  • The Journal of Physical Chemistry C
  • ACS Nano
  • The Journal of Chemical Physics

Collaboration is a key aspect of their research, with several frequent co-authors. Collaborators include Marika Schleberger, Ralf Schützhold, Hamid Mehdipour, Erik Pollmann, and Alfred Hucht.

Best Publications

  • A theoretical study of CH4 dissociation on pure and gold‐alloyed Ni(111) surfaces

    P. Kratzer;Bjørk Hammer;Jens Kehlet Nørskov

  • Preserving the half-metallicity at the Heusler alloy Co2MnSi(001) surface: a density functional theory study.

    S. Javad Hashemifar;Peter Kratzer;Matthias Scheffler

  • Atomic Structure of the GaAs ( 001 ) − ( 2 × 4 ) Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory

    V. P. LaBella;H. Yang;D. W. Bullock;P. M. Thibado

  • Effect of the cluster size in modeling the H2 desorption and dissociative adsorption on Si(001)

    Evgeni Penev;Peter Kratzer;Matthias Scheffler

  • Formation and Stability of Self-Assembled Coherent Islands in Highly Mismatched Heteroepitaxy

    L. G. Wang;Peter Kratzer;Matthias Scheffler;Nikolaj Moll

  • Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001)

    E. Penev;P. Kratzer;M. Scheffler

  • Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate

    L. G. Wang;Peter Kratzer;Nikolaj Moll;Matthias Scheffler

  • Magnetism in C- or N-doped MgO and ZnO: a density-functional study of impurity pairs.

    Hua Wu;Hua Wu;Alessandro Stroppa;Sung Sakong;Silvia Picozzi

  • Highly Site-Specific H 2 Adsorption on Vicinal Si ( 001 ) Surfaces

    Peter Kratzer;Eckard Pehlke;Matthias Scheffler;M. B. Raschke;M. B. Raschke

  • Effect of strain on surface diffusion in semiconductor heteroepitaxy

    Evgeni Penev;Peter Kratzer;Matthias Scheffler

  • Tight-binding study of the influence of the strain on the electronic properties of InAs 'GaAs quantum dots

    Roberto Santoprete;Belita Koiller;R. B. Capaz;Peter Kratzer

  • Role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study.

    Sorcha B. Healy;Claudia Filippi;Peter Kratzer;E Penev

  • Geometric and electronic factors determining the differences in reactivity of H2 on Cu(100) and Cu(111)

    P Kratzer;B Hammer;J.K Nørskov

  • Quantum Monte Carlo calculations of H2 dissociation on Si(001).

    Claudia Filippi;Sorcha B. Healy;Peter Kratzer;Eckhard Pehlke

  • Highly excited molecules from Eley-Rideal reactions

    P. Kratzer;W. Brenig

  • Arsenic dimer dynamics during MBE growth: Theoretical evidence for a novel chemisorption state of As_2 molecules on GaAs surfaces

    C. G. Morgan;Peter Kratzer;Matthias Scheffler

  • Reaction dynamics of molecular hydrogen on silicon surfaces

    P. Bratu;W. Brenig;Axel Groß;M. Hartmann

  • Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111).

    Lucia Aballe;Celia Rogero;Peter Kratzer;Shubha Gokhale

  • Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors.

    Peter Kratzer;Matthias Scheffler

  • Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): Theory and experiment

    Peter Kratzer;Q. K. K. Liu;P. Acosta-Diaz;C. Manzano

  • Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy

    L. G. Wang;P. Kratzer;M. Scheffler

Frequent Co-Authors

Matthias Scheffler
Matthias Scheffler Fritz Haber Institute of the Max Planck Society
Bjørk Hammer
Bjørk Hammer Aarhus University
Jens K. Nørskov
Jens K. Nørskov Technical University of Denmark
Anders Mikkelsen
Anders Mikkelsen Lund University
Rodrigo B. Capaz
Rodrigo B. Capaz Federal University of Rio de Janeiro
Klaus Kern
Klaus Kern Max Planck Society
Eckehard Schöll
Eckehard Schöll Technical University of Berlin
Edvin Lundgren
Edvin Lundgren Lund University
Karsten Horn
Karsten Horn Fritz Haber Institute of the Max Planck Society
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)

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