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Materials Science

D-Index
47
Citations
7323
World Ranking
11218
National Ranking
624

Overview

Peter Kratzer is affiliated with the University of Duisburg-Essen in Germany. Their research primarily focuses on materials science and physics, with significant contributions to the fields of materials chemistry, atomic and molecular physics, and optics. Their work also spans electrical and electronic engineering, electronic, optical and magnetic materials, and condensed matter physics.

The main topics covered in their research include 2D materials and applications, chalcogenide semiconductor thin films, MXene and MAX phase materials, perovskite materials and applications, spectroscopy and quantum chemical studies, theoretical and computational physics, and molecular junctions and nanostructures.

Their recent publications illustrate a focus on density functional theory (DFT) studies, adsorption phenomena, and magnetic interactions in layered materials. Selected recent papers by Peter Kratzer are as follows:

  • Chemisorption and Physisorption at the Metal/Organic Interface: Bond Energies of Naphthalene and Azulene on Coinage Metal Surfaces, 2020, The Journal of Physical Chemistry C
  • Orbital and magnetic ordering in single-layer FePS3: A DFT+U study, 2023, Physical Review B
  • All-electron real-time and imaginary-time time-dependent density functional theory within a numeric atom-centered basis function framework, 2021, The Journal of Chemical Physics
  • Structural defects in a Janus MoSSe monolayer: A density functional theory study, 2022, Physical Review B
  • Magnetic exchange interactions in bilayer CrX3 (X = Cl, Br, and I): A critical assessment of the DFT+U approach, 2021, Physical Review B

Peter Kratzer frequently publishes in several venues with an emphasis on open-access and peer-reviewed journals. Notable publication venues include:

  • arXiv (Cornell University)
  • Physical Review B
  • The Journal of Physical Chemistry C
  • ACS Nano
  • The Journal of Chemical Physics

Collaboration is a key aspect of their research, with several frequent co-authors. Collaborators include Marika Schleberger, Ralf Schützhold, Hamid Mehdipour, Erik Pollmann, and Alfred Hucht.

Best Publications

  • A theoretical study of CH4 dissociation on pure and gold‐alloyed Ni(111) surfaces

    P. Kratzer;Bjørk Hammer;Jens Kehlet Nørskov

  • Preserving the half-metallicity at the Heusler alloy Co2MnSi(001) surface: a density functional theory study.

    S. Javad Hashemifar;Peter Kratzer;Matthias Scheffler

  • Atomic Structure of the GaAs ( 001 ) − ( 2 × 4 ) Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory

    V. P. LaBella;H. Yang;D. W. Bullock;P. M. Thibado

  • Effect of the cluster size in modeling the H2 desorption and dissociative adsorption on Si(001)

    Evgeni Penev;Peter Kratzer;Matthias Scheffler

  • Formation and Stability of Self-Assembled Coherent Islands in Highly Mismatched Heteroepitaxy

    L. G. Wang;Peter Kratzer;Matthias Scheffler;Nikolaj Moll

  • Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001)

    E. Penev;P. Kratzer;M. Scheffler

  • Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate

    L. G. Wang;Peter Kratzer;Nikolaj Moll;Matthias Scheffler

  • Magnetism in C- or N-doped MgO and ZnO: a density-functional study of impurity pairs.

    Hua Wu;Hua Wu;Alessandro Stroppa;Sung Sakong;Silvia Picozzi

  • Highly Site-Specific H 2 Adsorption on Vicinal Si ( 001 ) Surfaces

    Peter Kratzer;Eckard Pehlke;Matthias Scheffler;M. B. Raschke;M. B. Raschke

  • Effect of strain on surface diffusion in semiconductor heteroepitaxy

    Evgeni Penev;Peter Kratzer;Matthias Scheffler

  • Tight-binding study of the influence of the strain on the electronic properties of InAs 'GaAs quantum dots

    Roberto Santoprete;Belita Koiller;R. B. Capaz;Peter Kratzer

  • Role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study.

    Sorcha B. Healy;Claudia Filippi;Peter Kratzer;E Penev

  • Geometric and electronic factors determining the differences in reactivity of H2 on Cu(100) and Cu(111)

    P Kratzer;B Hammer;J.K Nørskov

  • Quantum Monte Carlo calculations of H2 dissociation on Si(001).

    Claudia Filippi;Sorcha B. Healy;Peter Kratzer;Eckhard Pehlke

  • Highly excited molecules from Eley-Rideal reactions

    P. Kratzer;W. Brenig

  • Arsenic dimer dynamics during MBE growth: Theoretical evidence for a novel chemisorption state of As_2 molecules on GaAs surfaces

    C. G. Morgan;Peter Kratzer;Matthias Scheffler

  • Reaction dynamics of molecular hydrogen on silicon surfaces

    P. Bratu;W. Brenig;Axel Groß;M. Hartmann

  • Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111).

    Lucia Aballe;Celia Rogero;Peter Kratzer;Shubha Gokhale

  • Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors.

    Peter Kratzer;Matthias Scheffler

  • Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): Theory and experiment

    Peter Kratzer;Q. K. K. Liu;P. Acosta-Diaz;C. Manzano

  • Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy

    L. G. Wang;P. Kratzer;M. Scheffler

Frequent Co-Authors

Matthias Scheffler
Matthias Scheffler Fritz Haber Institute of the Max Planck Society
Bjørk Hammer
Bjørk Hammer Aarhus University
Jens K. Nørskov
Jens K. Nørskov Technical University of Denmark
Anders Mikkelsen
Anders Mikkelsen Lund University
Rodrigo B. Capaz
Rodrigo B. Capaz Federal University of Rio de Janeiro
Klaus Kern
Klaus Kern Max Planck Society
Eckehard Schöll
Eckehard Schöll Technical University of Berlin
Edvin Lundgren
Edvin Lundgren Lund University
Karsten Horn
Karsten Horn Fritz Haber Institute of the Max Planck Society
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)

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