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Materials Science

D-Index
43
Citations
14048
World Ranking
12199
National Ranking
60

Research.com Recognitions

  • 2003 - Fellow of John Simon Guggenheim Memorial Foundation

Overview

Rodrigo B. Capaz is affiliated with the Federal University of Rio de Janeiro in Brazil. Their research activities focus primarily on materials science and engineering, with a significant emphasis on materials chemistry and electrical and electronic engineering subfields.

Their work explores a variety of topics related to advanced materials, including graphene research and applications, 2D materials and applications, organic electronics and photovoltaics, MXene and MAX phase materials, boron and carbon nanomaterials research, molecular junctions and nanostructures, and carbon nanotubes in composites.

Frequent publication venues for their research include Physical Review B, Computer Physics Communications, arXiv (Cornell University), Physical Chemistry Chemical Physics, and Nanoscale.

Several recent papers illustrate the scope of their work:

  • Theory of hole-spin qubits in strained germanium quantum dots, 2021, Physical Review B
  • Flat bands and gaps in twisted double bilayer graphene, 2020, Nanoscale
  • Reorganization Energy upon Controlled Intermolecular Charge-Transfer Reactions in Monolithically Integrated Nanodevices, 2021, Small
  • Resonance Raman spectroscopy characterization of linear carbon chains encapsulated by multi-walled carbon nanotubes, 2023, Carbon
  • Electronic properties of substitutional impurities in graphenelike C2N, tg-C3N4, and hg-C3N4, 2020, Physical Review B

Collaborations are a key aspect of their research network. Frequent coauthors include Graziâni Candiotto, Marcos G. Menezes, A. Fazzio, Deyse G. Costa, and Gabriel R. Schleder.

Rodrigo B. Capaz has been recognized as a Fellow of the John Simon Guggenheim Memorial Foundation since 2003. This award marks a notable point within their career trajectory.

Best Publications

  • Quantifying defects in graphene via Raman spectroscopy at different excitation energies.

    L. G. Cançado;A. Jorio;E. H. Martins Ferreira;F. Stavale

  • Quantifying ion-induced defects and Raman relaxation length in graphene

    M.M. Lucchese;F. Stavale;E.H. Martins Ferreira;C. Vilani

  • Quantifying defects in graphene via Raman spectroscopy at different excitation energies

    L. G. Cançado;A. Jorio;E. H. Martins Ferreira;F. Stavale

  • Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder

    E. H. Martins Ferreira;Marcus V. O. Moutinho;F. Stavale;M. M. Lucchese

  • Spatially resolving edge states of chiral graphene nanoribbons

    Chenggang Tao;Chenggang Tao;Liying Jiao;Oleg V. Yazyev;Oleg V. Yazyev;Yen-Chia Chen;Yen-Chia Chen

  • Theory and Ab Initio Calculation of Radiative Lifetime of Excitons in Semiconducting Carbon Nanotubes

    Catalin D. Spataru;Catalin D. Spataru;Sohrab Ismail-Beigi;Rodrigo B. Capaz;Rodrigo B. Capaz;Rodrigo B. Capaz;Steven G. Louie;Steven G. Louie

  • Resonance Raman spectroscopy ( n , m ) -dependent effects in small-diameter single-wall carbon nanotubes

    A. Jorio;C. Fantini;M. A. Pimenta;R. B. Capaz

  • Measuring disorder in graphene with the G and D bands

    Ado Jorio;Erlon H. Martins Ferreira;Marcus V. O. Moutinho;Fernando Stavale

  • Diameter and chirality dependence of exciton properties in carbon nanotubes

    Rodrigo Capaz;Catalin Spataru;Sohrab Ismail-Beigi;Steven Louie

  • Diameter and chirality dependence of exciton properties in carbon nanotubes

    Rodrigo B. Capaz;Catalin D. Spataru;Catalin D. Spataru;Catalin D. Spataru;Sohrab Ismail-Beigi;Steven G. Louie;Steven G. Louie

  • Review on the symmetry-related properties of carbon nanotubes

    Eduardo B. Barros;Eduardo B. Barros;Ado Jorio;Georgii G. Samsonidze;Rodrigo B. Capaz

  • Disentangling contributions of point and line defects in the Raman spectra of graphene-related materials

    Luiz Gustavo Cançado;Mateus Gomes da Silva;Erlon H Martins Ferreira;Ferdinand Hof

  • An atlas of carbon nanotube optical transitions

    Kaihui Liu;Jack Deslippe;Jack Deslippe;Fajun Xiao;Fajun Xiao;Rodrigo B. Capaz;Rodrigo B. Capaz

  • Temperature dependence of the band gap of semiconducting carbon nanotubes.

    Rodrigo B. Capaz;Catalin D. Spataru;Paul Tangney;Marvin L. Cohen

  • Resonance effects on the Raman spectra of graphene superlattices

    V. Carozo;C. M. Almeida;B. Fragneaud;P. M. Bedê

  • Raman study of ion-induced defects in N-layer graphene

    Ado Jorio;Marcia M Lucchese;Fernando Stavale;Erlon H Martins Ferreira

  • Theory of magnetic edge states in chiral graphene nanoribbons

    Oleg V. Yazyev;Oleg V. Yazyev;Rodrigo B. Capaz;Rodrigo B. Capaz;Steven G. Louie;Steven G. Louie

  • Theory of sodium ordering in Na x Co O 2

    Peihong Zhang;Peihong Zhang;Rodrigo B. Capaz;Rodrigo B. Capaz;Rodrigo B. Capaz;Marvin L. Cohen;Marvin L. Cohen;Steven G. Louie;Steven G. Louie

  • Hyperfine interactions in silicon quantum dots

    Lucy V. C. Assali;Helena M. Petrilli;Rodrigo B. Capaz;Belita Koiller

  • Tight-binding study of the influence of the strain on the electronic properties of InAs 'GaAs quantum dots

    Roberto Santoprete;Belita Koiller;R. B. Capaz;Peter Kratzer

  • Structural transformations of carbon nanotubes under hydrostatic pressure.

    Paul Tangney;Rodrigo B. Capaz;Catalin D. Spataru;Marvin L. Cohen

  • Hydrostatic pressure effects on the structural and electronic properties of carbon nanotubes

    Rodrigo B. Capaz;Catalin D. Spataru;Catalin D. Spataru;Paul Tangney;Paul Tangney;Marvin L. Cohen;Marvin L. Cohen

Frequent Co-Authors

Steven G. Louie
Steven G. Louie University of California, Berkeley
Carlos A. Achete
Carlos A. Achete Instituto Nacional de Metrologia, Qualidade e Tecnologia
Marvin L. Cohen
Marvin L. Cohen University of California, Berkeley
Ado Jorio
Ado Jorio Universidade Federal de Minas Gerais
Feng Wang
Feng Wang University of California, Berkeley
Horst Niehus
Horst Niehus Humboldt-Universität zu Berlin
Michael F. Crommie
Michael F. Crommie University of California, Berkeley
Oleg V. Yazyev
Oleg V. Yazyev École Polytechnique Fédérale de Lausanne
Sohrab Ismail-Beigi
Sohrab Ismail-Beigi Yale University

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