World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
64
Citations
16632
World Ranking
5833
National Ranking
1505

Research.com Recognitions

  • 2014 - OSA Fellows Bruce Warren Wessels Northwestern University, U.S.A. For pioneering research in epitaxial materials and devices, especially wide-gap semiconductors and ferroelectric oxides for optoelectronic and electro-optic applications.
  • 2003 - Fellow of American Physical Society (APS) Citation For seminal contributions to understanding of defect structure and dopant behavior in epitaxial semiconductor and ferroelectric oxide thin films and heterostructures

Overview

Bruce W Wessels is affiliated with Northwestern University in the United States. Their research primarily lies at the intersection of engineering and materials science, with a strong focus on electrical and electronic engineering and materials chemistry. The scientist's work spans subfields including atomic and molecular physics, optics, radiation, and electronic, optical, and magnetic materials.

The main topics of their research include:

  • Perovskite Materials and Applications
  • Solid-state Spectroscopy and Crystallography
  • Advanced Semiconductor Detectors and Materials
  • Luminescence Properties of Advanced Materials
  • Optical Properties and Cooling Technologies in Crystalline Materials
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography

Recent publications highlight contributions to high-energy radiation detection and semiconductor materials. Notable papers include:

  • "CsPbBr3 perovskite detectors with 1.4% energy resolution for high-energy γ-rays," 2020, Nature Photonics
  • "Demonstration of Energy-Resolved γ-Ray Detection at Room Temperature by the CsPbCl3 Perovskite Semiconductor," 2021, Journal of the American Chemical Society
  • "Direct thermal neutron detection by the 2D semiconductor 6LiInP2Se6," 2020, Nature
  • "Ultrahigh-Flux X-ray Detection by a Solution-Grown Perovskite CsPbBr3 Single-Crystal Semiconductor Detector," 2023, Advanced Materials
  • "Inorganic Halide Perovskitoid TlPbI3 for Ionizing Radiation Detection," 2021, Advanced Functional Materials

Frequent co-authors contributing to their research include Mercouri G. Kanatzidis, Zhifu Liu, Duck Young Chung, John A. Peters, and Kyle M. McCall, indicating a collaborative engagement in related fields.

The scientist maintains a consistent publication record in several venues with multiple entries: The Cambridge Structural Database, Journal of Applied Physics, Nature, Nature Photonics, and Journal of the American Chemical Society.

Bruce W Wessels has received recognition through awards such as the OSA Fellows in 2014 for pioneering research in epitaxial materials and devices focusing on wide-gap semiconductors and ferroelectric oxides used in optoelectronic and electro-optic applications. Additionally, they were honored as a Fellow of the American Physical Society in 2003 for work on defect structure and dopant behavior in epitaxial semiconductor and ferroelectric oxide thin films and heterostructures.

Best Publications

  • Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High-Energy Radiation Detection

    Constantinos C. Stoumpos;Christos D. Malliakas;John A. Peters;Zhifu Liu

  • Strong Electron–Phonon Coupling and Self-Trapped Excitons in the Defect Halide Perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb)

    Kyle M. McCall;Constantinos C. Stoumpos;Svetlana S. Kostina;Mercouri G. Kanatzidis

  • High spectral resolution of gamma-rays at room temperature by perovskite CsPbBr3 single crystals

    Yihui He;Liviu Matei;Hee Joon Jung;Kyle M. McCall

  • Luminescence of heteroepitaxial zinc oxide

    S. Bethke;H. Pan;Bruce W Wessels

  • CsPbBr3 perovskite detectors with 1.4% energy resolution for high-energy γ-rays

    Yihui He;Matthew Petryk;Zhifu Liu;Daniel G. Chica

  • Excitonic emissions and above-band-gap luminescence in the single-crystal perovskite semiconductors CsPbB r 3 and CsPbC l 3

    M. Sebastian;J. A. Peters;C. C. Stoumpos;J. Im

  • Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities

    M. A. Reshchikov;G.-C. Yi;B. W. Wessels

  • Three-Dimensional Nanoscale Composition Mapping of Semiconductor Nanowires

    Daniel E. Perea;Jonathan E. Allen;Steven J. May;Bruce W Wessels

  • Dimensional Reduction: A Design Tool for New Radiation Detection Materials

    John Androulakis;Sebastian C. Peter;Hao Li;Christos D. Malliakas

  • Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition

    L. A. Wills;Bruce W Wessels;D. S. Richeson;Tobin Jay Marks

  • Ferroelectric Epitaxial Thin Films for Integrated Optics

    Bruce W. Wessels

  • Optical properties of the deep Mn acceptor in GaN:Mn

    R. Y. Korotkov;J. M. Gregie;Bruce W Wessels

  • Combinatorial generation and analysis of nanometer- and micrometer-scale silicon features via `dip-pen' nanolithography and wet chemical etching

    Dana A. Weinberger;Seunghun Hong;Chad A. Mirkin;B. W. Wessels

  • Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO3

    D. M. Gill;C. W. Conrad;G. Ford;Bruce W Wessels

  • Dielectric properties of epitaxial BaTiO3 thin films

    B. H. Hoerman;G. M. Ford;L. D. Kaufmann;B. W. Wessels

  • From 0D Cs3Bi2I9 to 2D Cs3Bi2I6Cl3: Dimensional Expansion Induces a Direct Band Gap but Enhances Electron–Phonon Coupling

    Kyle M. McCall;Constantinos C. Stoumpos;Constantinos C. Stoumpos;Oleg Y. Kontsevoi;Grant C. B. Alexander

  • Second-harmonic generation of poled BaTiO3 thin films

    H. A. Lu;L. A. Wills;Bruce W Wessels;W. P. Lin

  • Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

    F. Shahedipour;Bruce W Wessels

  • Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

    M. A. Reshchikov;F. Shahedipour;R. Y. Korotkov;B. W. Wessels

  • Thallium chalcohalides for X-ray and γ-ray detection.

    Simon Johnsen;Zhifu Liu;John A. Peters;Jung Hwan Song

  • Electrical properties of p-type GaN:Mg codoped with oxygen

    R. Y. Korotkov;J. M. Gregie;Bruce W Wessels

  • Three-dimensional nanoscale composition mapping of semiconductor nanowires.

    Lincoln Lauhon;Daniel Perea;Jonathan Allen;Steven May

Frequent Co-Authors

Mercouri G. Kanatzidis
Mercouri G. Kanatzidis Northwestern University
Tobin J. Marks
Tobin J. Marks Northwestern University
Arthur J Freeman
Arthur J Freeman Northwestern University
Carl R. Kannewurf
Carl R. Kannewurf Northwestern University
Steven J. May
Steven J. May Drexel University
Christos D. Malliakas
Christos D. Malliakas Northwestern University
Seng-Tiong Ho
Seng-Tiong Ho Northwestern University
Constantinos C. Stoumpos
Constantinos C. Stoumpos University of Crete
Duck Young Chung
Duck Young Chung Argonne National Laboratory
Gyu-Chul Yi
Gyu-Chul Yi Seoul National University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Bruce W Wessels

Trending Scientists

Recently Published Articles