World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
64
Citations
16632
World Ranking
5831
National Ranking
1503

Bruce W Wessels publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Bruce W Wessels sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 563 publications — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Bruce W Wessels D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Bruce W Wessels sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2014 - OSA Fellows Bruce Warren Wessels Northwestern University, U.S.A. For pioneering research in epitaxial materials and devices, especially wide-gap semiconductors and ferroelectric oxides for optoelectronic and electro-optic applications.
  • 2003 - Fellow of American Physical Society (APS) Citation For seminal contributions to understanding of defect structure and dopant behavior in epitaxial semiconductor and ferroelectric oxide thin films and heterostructures

Overview

Bruce W Wessels is affiliated with Northwestern University in the United States. Their research primarily lies at the intersection of engineering and materials science, with a strong focus on electrical and electronic engineering and materials chemistry. The scientist's work spans subfields including atomic and molecular physics, optics, radiation, and electronic, optical, and magnetic materials.

The main topics of their research include:

  • Perovskite Materials and Applications
  • Solid-state Spectroscopy and Crystallography
  • Advanced Semiconductor Detectors and Materials
  • Luminescence Properties of Advanced Materials
  • Optical Properties and Cooling Technologies in Crystalline Materials
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography

Recent publications highlight contributions to high-energy radiation detection and semiconductor materials. Notable papers include:

  • "CsPbBr3 perovskite detectors with 1.4% energy resolution for high-energy γ-rays," 2020, Nature Photonics
  • "Demonstration of Energy-Resolved γ-Ray Detection at Room Temperature by the CsPbCl3 Perovskite Semiconductor," 2021, Journal of the American Chemical Society
  • "Direct thermal neutron detection by the 2D semiconductor 6LiInP2Se6," 2020, Nature
  • "Ultrahigh-Flux X-ray Detection by a Solution-Grown Perovskite CsPbBr3 Single-Crystal Semiconductor Detector," 2023, Advanced Materials
  • "Inorganic Halide Perovskitoid TlPbI3 for Ionizing Radiation Detection," 2021, Advanced Functional Materials

Frequent co-authors contributing to their research include Mercouri G. Kanatzidis, Zhifu Liu, Duck Young Chung, John A. Peters, and Kyle M. McCall, indicating a collaborative engagement in related fields.

The scientist maintains a consistent publication record in several venues with multiple entries: The Cambridge Structural Database, Journal of Applied Physics, Nature, Nature Photonics, and Journal of the American Chemical Society.

Bruce W Wessels has received recognition through awards such as the OSA Fellows in 2014 for pioneering research in epitaxial materials and devices focusing on wide-gap semiconductors and ferroelectric oxides used in optoelectronic and electro-optic applications. Additionally, they were honored as a Fellow of the American Physical Society in 2003 for work on defect structure and dopant behavior in epitaxial semiconductor and ferroelectric oxide thin films and heterostructures.

Best Publications

  • Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High-Energy Radiation Detection

    Constantinos C. Stoumpos;Christos D. Malliakas;John A. Peters;Zhifu Liu

  • Strong Electron–Phonon Coupling and Self-Trapped Excitons in the Defect Halide Perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb)

    Kyle M. McCall;Constantinos C. Stoumpos;Svetlana S. Kostina;Mercouri G. Kanatzidis

  • High spectral resolution of gamma-rays at room temperature by perovskite CsPbBr3 single crystals

    Yihui He;Liviu Matei;Hee Joon Jung;Kyle M. McCall

  • Luminescence of heteroepitaxial zinc oxide

    S. Bethke;H. Pan;Bruce W Wessels

  • CsPbBr3 perovskite detectors with 1.4% energy resolution for high-energy γ-rays

    Yihui He;Matthew Petryk;Zhifu Liu;Daniel G. Chica

  • Excitonic emissions and above-band-gap luminescence in the single-crystal perovskite semiconductors CsPbB r 3 and CsPbC l 3

    M. Sebastian;J. A. Peters;C. C. Stoumpos;J. Im

  • Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities

    M. A. Reshchikov;G.-C. Yi;B. W. Wessels

  • Three-Dimensional Nanoscale Composition Mapping of Semiconductor Nanowires

    Daniel E. Perea;Jonathan E. Allen;Steven J. May;Bruce W Wessels

  • Dimensional Reduction: A Design Tool for New Radiation Detection Materials

    John Androulakis;Sebastian C. Peter;Hao Li;Christos D. Malliakas

  • Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition

    L. A. Wills;Bruce W Wessels;D. S. Richeson;Tobin Jay Marks

  • Ferroelectric Epitaxial Thin Films for Integrated Optics

    Bruce W. Wessels

  • Optical properties of the deep Mn acceptor in GaN:Mn

    R. Y. Korotkov;J. M. Gregie;Bruce W Wessels

  • Combinatorial generation and analysis of nanometer- and micrometer-scale silicon features via `dip-pen' nanolithography and wet chemical etching

    Dana A. Weinberger;Seunghun Hong;Chad A. Mirkin;B. W. Wessels

  • Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO3

    D. M. Gill;C. W. Conrad;G. Ford;Bruce W Wessels

  • Dielectric properties of epitaxial BaTiO3 thin films

    B. H. Hoerman;G. M. Ford;L. D. Kaufmann;B. W. Wessels

  • From 0D Cs3Bi2I9 to 2D Cs3Bi2I6Cl3: Dimensional Expansion Induces a Direct Band Gap but Enhances Electron–Phonon Coupling

    Kyle M. McCall;Constantinos C. Stoumpos;Constantinos C. Stoumpos;Oleg Y. Kontsevoi;Grant C. B. Alexander

  • Second-harmonic generation of poled BaTiO3 thin films

    H. A. Lu;L. A. Wills;Bruce W Wessels;W. P. Lin

  • Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

    F. Shahedipour;Bruce W Wessels

  • Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

    M. A. Reshchikov;F. Shahedipour;R. Y. Korotkov;B. W. Wessels

  • Thallium chalcohalides for X-ray and γ-ray detection.

    Simon Johnsen;Zhifu Liu;John A. Peters;Jung Hwan Song

  • Electrical properties of p-type GaN:Mg codoped with oxygen

    R. Y. Korotkov;J. M. Gregie;Bruce W Wessels

  • Three-dimensional nanoscale composition mapping of semiconductor nanowires.

    Lincoln Lauhon;Daniel Perea;Jonathan Allen;Steven May

Frequent Co-Authors

Mercouri G. Kanatzidis
Mercouri G. Kanatzidis Northwestern University
Tobin J. Marks
Tobin J. Marks Northwestern University
Arthur J Freeman
Arthur J Freeman Northwestern University
Carl R. Kannewurf
Carl R. Kannewurf Northwestern University
Steven J. May
Steven J. May Drexel University
Christos D. Malliakas
Christos D. Malliakas Northwestern University
Seng-Tiong Ho
Seng-Tiong Ho Northwestern University
Constantinos C. Stoumpos
Constantinos C. Stoumpos University of Crete
Duck Young Chung
Duck Young Chung Argonne National Laboratory
Gyu-Chul Yi
Gyu-Chul Yi Seoul National University

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