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D-Index & Metrics

Materials Science

D-Index
49
Citations
10422
World Ranking
10439
National Ranking
2481

Alex Ignatiev publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Alex Ignatiev sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 351 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Alex Ignatiev D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Alex Ignatiev sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Alex Ignatiev is a researcher affiliated with the University of Houston in the United States. Their work spans multiple areas within materials science and engineering, with a focus on the development and characterization of advanced materials and systems for energy storage and conversion.

Their recent publications include research on polymers, photovoltaic systems, battery materials, and applications in astronomy technology. Notable papers authored by or involving Ignatiev cover diverse topics such as:

  • Fabrication and Characterization of Flexible Solid Polymers Electrolytes for Supercapacitor Application (2022, Polymers)
  • Accurate modeling and simulation of solar photovoltaic panels with simulink-MATLAB (2021, Journal of Computational Electronics)
  • FarView: An in-situ manufactured lunar far side radio array concept for 21-cm Dark Ages cosmology (2024, Advances in Space Research)
  • Thermal effect on curved photovoltaic panels: Model validation and application in the Tabuk region (2022, PLoS ONE)
  • Preparation and Characterization of 3D Porous Silicon Anode Material for Lithium-Ion Battery Application (2022, International Journal of Electrochemical Science)

Ignatiev's frequent collaborators include Nacer Badi, S. A. Al-Ghamdi, Aashis S. Roy, Hatem A. Al-Aoh, and Ayshah S. Alatawi. Collaboration with these researchers contributes regularly to their output across various studies.

The primary publication venues supporting their research dissemination are:

  • Polymers
  • PLoS ONE
  • Advances in Space Research
  • Journal of Computational Electronics
  • International Journal of Electrochemical Science

Alex Ignatiev's research integrates expertise from the main fields of Materials Science and Engineering, with specialized subfields focusing on:

  • Electrical and Electronic Engineering
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Materials Chemistry

Their work covers specific topics involving conducting polymers and their applications, supercapacitor materials and fabrication, and advanced battery materials and technologies. They also focus on radio astronomy observations and technology, as well as photovoltaic system optimization techniques including solar cell performance optimization and solar thermal and photovoltaic systems.

Best Publications

  • Electric-pulse-induced reversible resistance change effect in magnetoresistive films

    S. Q. Liu;N. J. Wu;A. Ignatiev

  • Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides.

    Y. B. Nian;J. Strozier;N. J. Wu;X. Chen

  • A FERROELECTRIC-SUPERCONDUCTING PHOTODETECTOR

    H. Lin;N. J. Wu;F. Geiger;K. Xie

  • Electrically variable multi-state resistance computing

    Alex Ignatiev;NaiJuan Wu;Shangqing Liu;E. Joseph Charlson

  • Interactions of ion beams with surfaces. Reactions of nitrogen with silicon and its oxides

    J. Ashley Taylor;Gerald M. Lancaster;A. Ignatiev;J. Wayne Rabalais

  • Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)

    Unknown

  • Determination of the Ni{001}c(2×2)-CO Structure by Low-Energy Electron Diffraction

    M. Passler;A. Ignatiev;F. Jona;D. W. Jepsen

  • Leed investigations of xenon single crystal films and their use in studying the Ir(100) surface

    A. Ignatiev;A.V. Jones;T.N. Rhodin

  • Solar selective black cobalt: preparation, structure, and thermal stability

    G. B. Smith;A. Ignatiev;G. Zajac

  • Thin-film heterostructure solid oxide fuel cells

    Unknown

  • LEED study of the Pt(110)-(1 × 2) surface

    D.L. Adams;H.B. Nielsen;M.A. Van Hove;A. Ignatiev

  • Oxygen Surface Exchange in Mixed Ionic Electronic Conductors: Application to La0.5Sr0.5Fe0.8Ga0.2 O 3 − δ

    S. Kim;S. Wang;X. Chen;Y. L. Yang

  • Spatially extended nature of resistive switching in perovskite oxide thin films

    Xin Chen;NaiJuan Wu;John Strozier;Alex Ignatiev

  • Surface structures of the two allotropic phases of cobalt

    B. W. Lee;R. Alsenz;A. Ignatiev;M. A. Van Hove

  • Tandem solar cell with improved tunnel junction

    Alexandre Freundlich;Mauro F. Vilela;Abdelhak Bensaoula;Alex Ignatiev

  • Direct resistance profile for an electrical pulse induced resistance change device

    X. Chen;N. J. Wu;J. Strozier;A. Ignatiev

  • Formation and characterization of thin film vanadium oxides : auger electron spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, and optical reflectance studies

    A.Z. Moshfegh;A. Ignatiev

  • Electrical conductivity relaxation studies of an epitaxial La0.5Sr0.5CoO3−δ thin film

    X Chen;S Wang;Y.L Yang;L Smith

  • The structure of the clean Mo[001] surface

    A. Ignatiev;F. Jona;H. D. Shih;D. W. Jepsen

  • Concentration depth profiles by XPS; A new approach

    S. Tougaard;A. Ignatiev

  • Thin film solid oxide fuel cell and method for forming

    Xin Chen;NaiJuan Wu;Alex Ignatiev

  • The surface microstructure optical properties relationship in solar absorbers: black chrome

    A. Ignatiev;P. O'neill;G. Zajac

  • Resistive switching characteristics and mechanism of thermally grown WOx thin films

    Kuyyadi P. Biju;Xinjun Liu;Manzar Siddik;Seonghyun Kim

Frequent Co-Authors

F. Jona
F. Jona State University of New York
M.A. Van Hove
M.A. Van Hove Hong Kong Baptist University
Alireza Z. Moshfegh
Alireza Z. Moshfegh Sharif University of Technology
Allan J. Jacobson
Allan J. Jacobson University of Houston
P. M. Marcus
P. M. Marcus IBM (United States)
Dong Liu
Dong Liu Nanjing University of Science and Technology
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Qing Chen
Qing Chen Peking University
Jie Lian
Jie Lian Rensselaer Polytechnic Institute
Naomi J. Halas
Naomi J. Halas Rice University

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