Reversible Electrical Switching Phenomena in Disordered Structures
Stanford R. Ovshinsky.
Physical Review Letters (1968)
Simple band model for amorphous semiconducting alloys
Morrel H. Cohen;H. Fritzsche;S. R. Ovshinsky.
Physical Review Letters (1969)
Threshold switching in chalcogenide-glass thin films
D. Adler;M. S. Shur;M. Silver;S. R. Ovshinsky.
Journal of Applied Physics (1980)
A Nickel Metal Hydride Battery for Electric Vehicles
S. R. Ovshinsky;M. A. Fetcenko;J. Ross.
Science (1993)
Multibit single cell memory element having tapered contact
Stanford R. Ovshinsky.
(1996)
Electrically erasable phase change memory
Stanford R. Ovshinsky;Stephen J. Hudgens;Wolodymyr Czubatyj;David A. Strand.
(1991)
Symmetrical current controlling device
Stanford R Ovshinsky.
(1963)
Improved thin-film structure for chalcogenide electrical switching devices and process therefor
Patrick J. Klersy;David C. Jablonski;Stanford R. Ovshinsky.
(1992)
Programmable semiconductor structures and method for using the same
Stanford R. Ovshinsky;Robert R. Johnson;Vincent D. Cannella;Zvi Yaniv.
(1985)
Electrically erasable memory elements characterized by reduced current and improved thermal stability
Stanford R. Ovshinsky;David A. Priory Lane Strand;Patrick Klersy.
(1996)
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University of North Carolina at Charlotte
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Yıldız Technical University
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Technical University of Kaiserslautern
Max Planck Society
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