The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where John A. Turner sits on this spectrum.
This scientist: 338 publications — 68th percentile
68% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where John A. Turner sits on this spectrum.
This scientist: 68 D-Index — 63rd percentile
63% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
John A. Turner is affiliated with Oak Ridge National Laboratory in the United States. Their research primarily spans the fields of Engineering and Materials Science, with specific focus areas in Materials Chemistry, Biomedical Engineering, and Electrical and Electronic Engineering.
Their work encompasses several main topics, which include:
Turner's publication record includes contributions to venues such as arXiv (Cornell University). One example of their recent scholarly output is the paper titled "Multi-scale characterization of hexagonal Si-4H: a hierarchical nanostructured material," published in 2021 in arXiv (Cornell University).
Their collaborative network is reflected by frequent coauthors, including:
These collaborative relationships suggest an interdisciplinary approach, integrating expertise across various domains within engineering and materials science. The combination of topics such as silicon nanostructures and thin-film transistor technologies indicates involvement in both fundamental materials research and applied electronic engineering fields.
By focusing on hierarchical nanostructured materials, Turner contributes to the evolving understanding of nanoscale materials and their applications, which are critical in advancing technologies such as photoluminescent devices and nanowire-based systems.
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Zhebo Chen;Thomas F. Jaramillo;Todd G. Deutsch;Alan Kleiman-Shwarsctein
John Turner;George Sverdrup;Margaret K. Mann;Pin-Ching Maness
Satyananda Kishore Pilli;Thomas E. Furtak;Logan D. Brown;Todd G. Deutsch
Narendran Raghavan;Ryan Dehoff;Sreekanth Pannala;Srdjan Simunovic
James L. Young;Myles A. Steiner;Henning Döscher;Henning Döscher
Wan-Jian Yin;Houwen Tang;Su-Huai Wei;Mowafak M. Al-Jassim
Jing Gu;Yong Yan;James L. Young;James L. Young;K. Xerxes Steirer
Wan-Jian Yin;Su-Huai Wei;Mowafak M. Al-Jassim;John Turner
T. DebRoy;W. Zhang;J. Turner;S.S. Babu
Yong Yan;Yong Yan;Ryan W. Crisp;Ryan W. Crisp;Jing Gu;Jing Gu;Boris D. Chernomordik
Aron Walsh;Su Huai Wei;Yanfa Yan;M. M. Al-Jassim
M. W. Peterson;J. A. Turner;A. J. Nozik
H. Döscher;H. Döscher;J. F. Geisz;T. G. Deutsch;J. A. Turner
Kwang-Soon Ahn;Yanfa Yan;Sudhakar Shet;Todd Deutsch
Satyananda Kishore Pilli;Todd G. Deutsch;Thomas E. Furtak;Logan D. Brown
Shyam S. Kocha;Mark W. Peterson;Douglas J. Arent;Joan M. Redwing
H. Wang;M.P. Brady;G. Teeter;J.A. Turner
Ji‐Guang Zhang;Jeanne M. McGraw;John Turner;David Ginley
Heli Wang;Todd Deutsch;John A. Turner
John Augustus Turner;Jing Gu;Jeffery Andrew Aguiar;Jeffery Andrew Aguiar;Suzanne Ferrere
P. Liu;S.-H. Lee;C.E. Tracy;Y. Yan
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