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Electronics and Electrical Engineering

D-Index
39
Citations
7596
World Ranking
4629
National Ranking
182

Overview

Ichiro Omura is a researcher affiliated with the Kyushu Institute of Technology in Japan. Their main field of study is Engineering, with a strong specialization in Electrical and Electronic Engineering. Their research encompasses several focused subfields including Control and Systems Engineering, Atomic and Molecular Physics and Optics, Hardware and Architecture, and Aerospace Engineering.

The core topics that define Omura's research work include:

  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Electromagnetic Compatibility and Noise Suppression
  • Electrostatic Discharge in Electronics
  • Radiation Effects in Electronics
  • Smart Grid Energy Management

Their recent published papers illustrate a focus on semiconductor device behavior, materials, and electronics reliability. Key publications include:

  • "Equalization of DC and Surge Components of Drain Current of Two Parallel-Connected SiC MOSFETs Using Single-Input Dual-Output Digital Gate Driver IC," 2022, published in the 2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
  • "Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations," 2020, published in Solid-State Electronics
  • "Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation," 2020, published in Solid-State Electronics
  • "Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction," 2020, published in Microelectronics Reliability
  • "Switching waveform design with gate charge control for power MOSFETs," 2022, published in Power Electronic Devices and Components

Omura frequently publishes research in these venues:

  • Power Electronic Devices and Components
  • Microelectronics Reliability
  • Japanese Journal of Applied Physics
  • Solid-State Electronics
  • 2022 IEEE Applied Power Electronics Conference and Exposition (APEC)

Their collaborative network reflects involvement with several frequent co-authors, including:

  • Masanori Tsukuda
  • Srikanth Gollapudi
  • Seiya Abe
  • Hirotaka Oomori
  • Kohei Horii

Ichiro Omura's research contributions predominantly focus on the development and analysis of silicon carbide (SiC) semiconductor devices and associated technologies, showing an emphasis on device reliability, noise suppression, and semiconductor circuit design principles.

Best Publications

  • Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

    W. Saito;Y. Takada;M. Kuraguchi;K. Tsuda

  • High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

    W. Saito;Y. Takada;M. Kuraguchi;K. Tsuda

  • A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor

    M. Kitagawa;I. Omura;S. Hasegawa;T. Inoue

  • Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

    W. Saito;T. Nitta;Y. Kakiuchi;Y. Saito

  • Nitride semiconductor device

    Wataru Saito;Ichiro Omura

  • Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

    Wataru Saito;Ichiro Omura;Tsuneo Ogura;Hiromichi Ohashi

  • Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage

    W. Saito;M. Kuraguchi;Y. Takada;K. Tsuda

  • Power semiconductor device having resurf layer

    Wataru Saitoh;Ichiro Omura;Masakazu Yamaguchi;Satoshi Aida

  • Nitride semiconductor element

    Ichiro Omura;Wataru Saito;一郎 大村;渉 齋藤

  • A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

    W. Saito;T. Nitta;Y. Kakiuchi;Y. Saito

  • Insulated gate semiconductor device

    Mitsuhiko Kitagawa;Ichiro Omura;Akio Nakagawa;Norio Yasuhara

  • Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

    T. Paul Chow;Ichiro Omura;Masataka Higashiwaki;Hiroshi Kawarada

  • Semiconductor device and method of manufacturing semiconductor device

    Ichiro Omura;Kenji Takahashi;Chiaki Takubo;Hideo Aoki

  • Power semiconductor device package

    Wataru Saito;Ichiro Omura

  • General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm

    Koutarou Miyazaki;Seiya Abe;Masanori Tsukuda;Ichiro Omura

  • Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R/sub ON/A-V/sub B/ tradeoff characteristics

    W. Saito;M. Kuraguchi;Y. Takada;K. Tsuda

  • High breakdown Voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

    W. Saito;M. Kuraguchi;Y. Takada;K. Tsuda

  • Semiconductor device using a nitride semiconductor

    Wataru Saito;Ichiro Omura

  • Semiconductor device containing nitride

    Ichiro Omura;Wataru Saito

  • Power Semiconductor Devices for Hybrid, Electric, and Fuel Cell Vehicles

    Unknown

  • Field effect transistor

    Ichiro Omura;Akio Nakagawa;Tadashi Sakai;Masayuki Sekimura

Frequent Co-Authors

Toshiro Hiramoto
Toshiro Hiramoto University of Tokyo

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