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Ichiro Omura

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 39 4629 4443 182 172 267 7596

Ichiro Omura publications per year

The chart shows the history of publications by Ichiro Omura between 1990 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Ichiro Omura published across 37 years, from 1990 to 2026, averaging 7.7 papers a year. Output peaked at 25 publications in 2019. 5 of the 284 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1990 to 2026. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2019. 1990: 2 publications 1991: 2 publications 1992: 10 publications 1993: 7 publications 1994: 2 publications 1995: 9 publications 1996: 2 publications 1997: 4 publications 1998: 4 publications 1999: 1 publication 2000: 6 publications 2001: 5 publications 2002: 8 publications 2003: 16 publications 2004: 15 publications 2005: 12 publications 2006: 13 publications 2007: 9 publications 2008: 7 publications 2009: 2 publications 2010: 2 publications 2011: 8 publications 2012: 7 publications 2013: 6 publications 2014: 6 publications 2015: 8 publications 2016: 14 publications 2017: 16 publications 2018: 9 publications 2019: 25 publications 2020: 13 publications 2021: 6 publications 2022: 7 publications 2023: 8 publications 2024: 8 publications 2025: 4 publications 2026: 1 publication
1990 2026

284 publications in total across all disciplines

View publications per year as a table
Ichiro Omura: publications per year, 1990 to 2026
Year Publications
1990 2
1991 2
1992 10
1993 7
1994 2
1995 9
1996 2
1997 4
1998 4
1999 1
2000 6
2001 5
2002 8
2003 16
2004 15
2005 12
2006 13
2007 9
2008 7
2009 2
2010 2
2011 8
2012 7
2013 6
2014 6
2015 8
2016 14
2017 16
2018 9
2019 25
2020 13
2021 6
2022 7
2023 8
2024 8
2025 4
2026 1
Total 284
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Ichiro Omura publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ichiro Omura sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 254–273 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 267 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366 267
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Ichiro Omura D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ichiro Omura sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 39 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214 39
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Ichiro Omura is a researcher affiliated with the Kyushu Institute of Technology in Japan. Their main field of study is Engineering, with a strong specialization in Electrical and Electronic Engineering. Their research encompasses several focused subfields including Control and Systems Engineering, Atomic and Molecular Physics and Optics, Hardware and Architecture, and Aerospace Engineering.

The core topics that define Omura's research work include:

  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Electromagnetic Compatibility and Noise Suppression
  • Electrostatic Discharge in Electronics
  • Radiation Effects in Electronics
  • Smart Grid Energy Management

Their recent published papers illustrate a focus on semiconductor device behavior, materials, and electronics reliability. Key publications include:

  • "Equalization of DC and Surge Components of Drain Current of Two Parallel-Connected SiC MOSFETs Using Single-Input Dual-Output Digital Gate Driver IC," 2022, published in the 2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
  • "Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations," 2020, published in Solid-State Electronics
  • "Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation," 2020, published in Solid-State Electronics
  • "Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction," 2020, published in Microelectronics Reliability
  • "Switching waveform design with gate charge control for power MOSFETs," 2022, published in Power Electronic Devices and Components

Omura frequently publishes research in these venues:

  • Power Electronic Devices and Components
  • Microelectronics Reliability
  • Japanese Journal of Applied Physics
  • Solid-State Electronics
  • 2022 IEEE Applied Power Electronics Conference and Exposition (APEC)

Their collaborative network reflects involvement with several frequent co-authors, including:

  • Masanori Tsukuda
  • Srikanth Gollapudi
  • Seiya Abe
  • Hirotaka Oomori
  • Kohei Horii

Ichiro Omura's research contributions predominantly focus on the development and analysis of silicon carbide (SiC) semiconductor devices and associated technologies, showing an emphasis on device reliability, noise suppression, and semiconductor circuit design principles.

Best Publications

  • Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

    W. Saito;Y. Takada;M. Kuraguchi;K. Tsuda

  • High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

    W. Saito;Y. Takada;M. Kuraguchi;K. Tsuda

  • A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor

    M. Kitagawa;I. Omura;S. Hasegawa;T. Inoue

  • Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

    W. Saito;T. Nitta;Y. Kakiuchi;Y. Saito

  • Nitride semiconductor device

    Wataru Saito;Ichiro Omura

  • Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

    Wataru Saito;Ichiro Omura;Tsuneo Ogura;Hiromichi Ohashi

  • Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage

    W. Saito;M. Kuraguchi;Y. Takada;K. Tsuda

  • Power semiconductor device having resurf layer

    Wataru Saitoh;Ichiro Omura;Masakazu Yamaguchi;Satoshi Aida

  • Nitride semiconductor element

    Ichiro Omura;Wataru Saito;一郎 大村;渉 齋藤

  • A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

    W. Saito;T. Nitta;Y. Kakiuchi;Y. Saito

  • Insulated gate semiconductor device

    Mitsuhiko Kitagawa;Ichiro Omura;Akio Nakagawa;Norio Yasuhara

  • Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

    T. Paul Chow;Ichiro Omura;Masataka Higashiwaki;Hiroshi Kawarada

  • Semiconductor device and method of manufacturing semiconductor device

    Ichiro Omura;Kenji Takahashi;Chiaki Takubo;Hideo Aoki

  • Power semiconductor device package

    Wataru Saito;Ichiro Omura

  • General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm

    Koutarou Miyazaki;Seiya Abe;Masanori Tsukuda;Ichiro Omura

  • Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R/sub ON/A-V/sub B/ tradeoff characteristics

    W. Saito;M. Kuraguchi;Y. Takada;K. Tsuda

  • High breakdown Voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

    W. Saito;M. Kuraguchi;Y. Takada;K. Tsuda

  • Semiconductor device using a nitride semiconductor

    Wataru Saito;Ichiro Omura

  • Semiconductor device containing nitride

    Ichiro Omura;Wataru Saito

  • Power Semiconductor Devices for Hybrid, Electric, and Fuel Cell Vehicles

    Unknown

  • Field effect transistor

    Ichiro Omura;Akio Nakagawa;Tadashi Sakai;Masayuki Sekimura

Frequent Co-Authors

Hiromichi Ohashi
Hiromichi Ohashi Tokyo Institute of Technology
Toshiro Hiramoto
Toshiro Hiramoto University of Tokyo
Wolfgang Fichtner
Wolfgang Fichtner ETH Zurich

External Links

Personal website of Ichiro Omura

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Publications: 33

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