Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
W. Saito;Y. Takada;M. Kuraguchi;K. Tsuda.
IEEE Transactions on Electron Devices (2006)
639 Citations
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
W. Saito;Y. Takada;M. Kuraguchi;K. Tsuda.
IEEE Transactions on Electron Devices (2003)
529 Citations
A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor
M. Kitagawa;I. Omura;S. Hasegawa;T. Inoue.
international electron devices meeting (1993)
309 Citations
Nitride semiconductor device
Wataru Saito;Ichiro Omura.
(2011)
261 Citations
Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure
W. Saito;T. Nitta;Y. Kakiuchi;Y. Saito.
IEEE Transactions on Electron Devices (2007)
246 Citations
Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
Wataru Saito;Ichiro Omura;Tsuneo Ogura;Hiromichi Ohashi.
Solid-state Electronics (2004)
190 Citations
Power semiconductor device having resurf layer
Wataru Saitoh;Ichiro Omura;Masakazu Yamaguchi;Satoshi Aida.
(2002)
186 Citations
Nitride semiconductor element
Ichiro Omura;Wataru Saito;一郎 大村;渉 齋藤.
(2005)
178 Citations
Insulated gate semiconductor device
Mitsuhiko Kitagawa;Ichiro Omura;Akio Nakagawa;Norio Yasuhara.
(2002)
171 Citations
Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage
W. Saito;M. Kuraguchi;Y. Takada;K. Tsuda.
IEEE Transactions on Electron Devices (2005)
169 Citations
