2026 Tomihiro Hashizume: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	49	10511	10154	651	620	340	9195

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

10511

10154

651

620

340

9195

Overview

Tomihiro Hashizume is affiliated with Hitachi in Japan, focusing on engineering and physics-related research topics. Their scholarly contributions span areas such as advanced materials characterization techniques and semiconductor materials and devices.

Their main fields of study include:

Engineering
Physics and Astronomy

Within these fields, Hashizume's work touches on several specialized subfields:

Biomedical Engineering
Computational Mechanics
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

The core topics explored in their research are:

Advanced Materials Characterization Techniques
Ion-surface interactions and analysis
Semiconductor materials and interfaces
Semiconductor materials and devices
Force Microscopy Techniques and Applications
Molecular Junctions and Nanostructures

Recent publications authored or coauthored by Hashizume include:

"Monochromatic electron emission from CeB6 (310) cold field emitter," 2020, Applied Physics Letters
"Stabilization of cold-field-emission current from a CeB6 single-crystal emitter by using a faceted (100) plane," 2020, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
"Advances in Scanning Probe Microscopy Research," 2023, e-Journal of Surface Science and Nanotechnology

Frequent collaborators in their research include:

Keigo Kasuya
Toshiaki Kusunoki
Noriaki Arai
Takashi Ohshima
Souichi Katagiri

Their work has been published predominantly in the following venues:

Applied Physics Letters
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
e-Journal of Surface Science and Nanotechnology

Best Publications

Self-Assembled Hexa-peri-hexabenzocoronene Graphitic Nanotube

Jonathan P. Hill;Wusong Jin;Atsuko Kosaka;Takanori Fukushima

1190
Citations
Structures of As-rich GaAs(001)-(2 x 4) reconstructions.

Tomihiro Hashizume;Q. K. Xue;J. Zhou;A. Ichimiya

316
Citations
Effective Production of Poly(3-alkylthiophene) Nanofibers by means of Whisker Method using Anisole Solvent: Structural, Optical, and Electrical Properties

Sadaki Samitsu;Takeshi Shimomura;Seiji Heike;Tomihiro Hashizume

301
Citations
Intramolecular structures of C 60 molecules adsorbed on the Cu(111)-(1×1) surface

Tomihiro Hashizume;K. Motai;X. D. Wang;H. Shinohara

284
Citations
Structures of the Ga-rich 4 x 2 and 4 x 6 reconstructions of the GaAs(001) surface.

Qikun Xue;T. Hashizume;J. M. Zhou;T. Sakata

217
Citations
Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces

Qi-Kun Xue;Qi-Kun Xue;T. Hashizume;T. Sakurai

197
Citations
Field ion-scanning tunneling microscopy

T. Sakurai;T. Sakurai;T. Hashizume;T. Hashizume;I. Kamiya;I. Kamiya;Y. Hasegawa;Y. Hasegawa

193
Citations
Scanning tunneling microscopy study of fullerenes

T. Sakurai;X.-D. Wang;Q.K. Xue;Y. Hasegawa

188
Citations
Field ion-scanning tunneling microscopy study of c60 on the si(100) surface

Tomihiro Hashizume;Xiang Dong Wang;Yuichiro Nishina;Hisanori Shinohara

181
Citations
Determination of the surface structures of the GaAs(001)-(2×4) As-rich phase

Tomihiro Hashizume;Q.-K. Xue;A. Ichimiya;T. Sakurai

172
Citations
Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface

Tomihiro Hashizume;Seiji Heike;Mark I. Lutwyche;Satoshi Watanabe

171
Citations
Adsorption of C60 and C84 on the Si(100)2×1 surface studied by using the scanning tunneling microscope

X. D. Wang;T. Hashizume;H. Shinohara;Y. Saito

156
Citations
Jahn-Teller Distortion in Dangling-Bond Linear Chains Fabricated on a Hydrogen-Terminated Si(100)- 2×1 Surface

Taro Hitosugi;S. Heike;T. Onogi;T. Hashizume

122
Citations
Structural and electronic properties of ordered single and multiple layers of Na on the Si(111) surface.

D. Jeon;T. Hashizume;T. Sakurai;R. F. Willis

114
Citations
Scanning tunneling microscopy observation of copper-phthalocyanine molecules on Si(100) and Si(111) surfaces

M. Kanai;T. Kawai;K. Motai;X.D. Wang

112
Citations
Field ion‐scanning tunneling microscopy of alkali metal adsorption on the Si(100) surface

T. Hashizume;Y. Hasegawa;I. Kamiya;T. Ide

108
Citations
New result in surface segregation of Ni-Cu binary alloys.

Toshio Sakurai;T. Hashizume;A. Jimbo;A. Sakai

106
Citations
Scanning tunneling microscopy of C60 on the Si(111)7 × 7 surface

Xiang Dong Wang;Tomihiro Hashizume;Hisanori Shinohara;Yahachi Saito

105
Citations
Ordering of Ag-O chains on the Ag(110) surface

Masahiro Taniguchi;Ken ichi Tanaka;Tomihiro Hashizume;Toshio Sakurai

96
Citations
Adsorption of Li (K) on the Si(001)-(2×1) surface : scanning-tunneling-microscopy study

Yukio Hasegawa;I. Kamiya;T. Hashizume;T. Sakurai

94
Citations