World's Best Scientists 2026 revealed!
Tomihiro Hashizume

Tomihiro Hashizume

D-Index & Metrics

Materials Science

D-Index
49
Citations
9195
World Ranking
10509
National Ranking
651

Tomihiro Hashizume publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tomihiro Hashizume sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 340 publications — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tomihiro Hashizume D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tomihiro Hashizume sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Tomihiro Hashizume is affiliated with Hitachi in Japan, focusing on engineering and physics-related research topics. Their scholarly contributions span areas such as advanced materials characterization techniques and semiconductor materials and devices.

Their main fields of study include:

  • Engineering
  • Physics and Astronomy

Within these fields, Hashizume's work touches on several specialized subfields:

  • Biomedical Engineering
  • Computational Mechanics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

The core topics explored in their research are:

  • Advanced Materials Characterization Techniques
  • Ion-surface interactions and analysis
  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Force Microscopy Techniques and Applications
  • Molecular Junctions and Nanostructures

Recent publications authored or coauthored by Hashizume include:

  • "Monochromatic electron emission from CeB6 (310) cold field emitter," 2020, Applied Physics Letters
  • "Stabilization of cold-field-emission current from a CeB6 single-crystal emitter by using a faceted (100) plane," 2020, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • "Advances in Scanning Probe Microscopy Research," 2023, e-Journal of Surface Science and Nanotechnology

Frequent collaborators in their research include:

  • Keigo Kasuya
  • Toshiaki Kusunoki
  • Noriaki Arai
  • Takashi Ohshima
  • Souichi Katagiri

Their work has been published predominantly in the following venues:

  • Applied Physics Letters
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • e-Journal of Surface Science and Nanotechnology

Best Publications

  • Self-Assembled Hexa-peri-hexabenzocoronene Graphitic Nanotube

    Jonathan P. Hill;Wusong Jin;Atsuko Kosaka;Takanori Fukushima

  • Structures of As-rich GaAs(001)-(2 x 4) reconstructions.

    Tomihiro Hashizume;Q. K. Xue;J. Zhou;A. Ichimiya

  • Effective Production of Poly(3-alkylthiophene) Nanofibers by means of Whisker Method using Anisole Solvent: Structural, Optical, and Electrical Properties

    Sadaki Samitsu;Takeshi Shimomura;Seiji Heike;Tomihiro Hashizume

  • Intramolecular structures of C 60 molecules adsorbed on the Cu(111)-(1×1) surface

    Tomihiro Hashizume;K. Motai;X. D. Wang;H. Shinohara

  • Structures of the Ga-rich 4 x 2 and 4 x 6 reconstructions of the GaAs(001) surface.

    Qikun Xue;T. Hashizume;J. M. Zhou;T. Sakata

  • Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces

    Qi-Kun Xue;Qi-Kun Xue;T. Hashizume;T. Sakurai

  • Field ion-scanning tunneling microscopy

    T. Sakurai;T. Sakurai;T. Hashizume;T. Hashizume;I. Kamiya;I. Kamiya;Y. Hasegawa;Y. Hasegawa

  • Scanning tunneling microscopy study of fullerenes

    T. Sakurai;X.-D. Wang;Q.K. Xue;Y. Hasegawa

  • Field ion-scanning tunneling microscopy study of c60 on the si(100) surface

    Tomihiro Hashizume;Xiang Dong Wang;Yuichiro Nishina;Hisanori Shinohara

  • Determination of the surface structures of the GaAs(001)-(2×4) As-rich phase

    Tomihiro Hashizume;Q.-K. Xue;A. Ichimiya;T. Sakurai

  • Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface

    Tomihiro Hashizume;Seiji Heike;Mark I. Lutwyche;Satoshi Watanabe

  • Adsorption of C60 and C84 on the Si(100)2×1 surface studied by using the scanning tunneling microscope

    X. D. Wang;T. Hashizume;H. Shinohara;Y. Saito

  • Jahn-Teller Distortion in Dangling-Bond Linear Chains Fabricated on a Hydrogen-Terminated Si(100)- 2×1 Surface

    Taro Hitosugi;S. Heike;T. Onogi;T. Hashizume

  • Structural and electronic properties of ordered single and multiple layers of Na on the Si(111) surface.

    D. Jeon;T. Hashizume;T. Sakurai;R. F. Willis

  • Scanning tunneling microscopy observation of copper-phthalocyanine molecules on Si(100) and Si(111) surfaces

    M. Kanai;T. Kawai;K. Motai;X.D. Wang

  • Field ion‐scanning tunneling microscopy of alkali metal adsorption on the Si(100) surface

    T. Hashizume;Y. Hasegawa;I. Kamiya;T. Ide

  • New result in surface segregation of Ni-Cu binary alloys.

    Toshio Sakurai;T. Hashizume;A. Jimbo;A. Sakai

  • Scanning tunneling microscopy of C60 on the Si(111)7 × 7 surface

    Xiang Dong Wang;Tomihiro Hashizume;Hisanori Shinohara;Yahachi Saito

  • Ordering of Ag-O chains on the Ag(110) surface

    Masahiro Taniguchi;Ken ichi Tanaka;Tomihiro Hashizume;Toshio Sakurai

  • Adsorption of Li (K) on the Si(001)-(2×1) surface : scanning-tunneling-microscopy study

    Yukio Hasegawa;I. Kamiya;T. Hashizume;T. Sakurai

Frequent Co-Authors

Toshio Sakurai
Toshio Sakurai Tohoku University
Qi-Kun Xue
Qi-Kun Xue Southern University of Science and Technology
Hisanori Shinohara
Hisanori Shinohara Nagoya University
Taro Hitosugi
Taro Hitosugi University of Tokyo
Kohzo Ito
Kohzo Ito University of Tokyo
Yahachi Saito
Yahachi Saito Nagoya University
Kazuhiro Hono
Kazuhiro Hono National Institute for Materials Science
Yoshiyuki Kawazoe
Yoshiyuki Kawazoe Tohoku University
Tetsuya Hasegawa
Tetsuya Hasegawa University of Tokyo
Chunli Bai
Chunli Bai Chinese Academy of Sciences

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