World's Best Scientists 2026 revealed!
Robert A. Wolkow

Robert A. Wolkow

D-Index & Metrics

Materials Science

D-Index
53
Citations
10858
World Ranking
9189
National Ranking
165

Chemistry

D-Index
50
Citations
10331
World Ranking
14280
National Ranking
389

Robert A. Wolkow publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Robert A. Wolkow sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 194 publications — 28th percentile

28% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Robert A. Wolkow D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Robert A. Wolkow sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 53 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2012 - Fellow of American Physical Society (APS) Citation For contributions to atomicscale characterization and fabrication processes with an emphasis on silicon surfaces
  • 2000 - Fellow of the Royal Society of Canada Academy of Science
  • 1999 - Rutherford Memorial Medal in Physics, Royal Society of Canada

Overview

Robert A. Wolkow is affiliated with the University of Alberta in Canada. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a particular focus on Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics.

The scientist's work covers various subfields and topics including Semiconductor materials and devices, Surface and Thin Film Phenomena, Force Microscopy Techniques and Applications, Electronic and Structural Properties of Oxides, Integrated Circuits and Semiconductor Failure Analysis, Advancements in Semiconductor Devices and Circuit Design, and Quantum and electron transport phenomena.

Robert A. Wolkow has contributed to several recent publications. Notable papers include:

  • SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits, 2020, IEEE Transactions on Nanotechnology
  • Atomically Precise Manufacturing of Silicon Electronics, 2024, ACS Nano
  • Deep learning-guided surface characterization for autonomous hydrogen lithography, 2020, Machine Learning Science and Technology
  • Atomic defect classification of the H-Si(100) surface through multi-mode scanning probe microscopy, 2020, Beilstein Journal of Nanotechnology
  • Roadmap on atomic-scale semiconductor devices, 2025, Nano Futures

Their frequent co-authors include Jason Pitters, Lucian Livadaru, Jeremiah Croshaw, Konrad Walus, and Samuel Sze Hang Ng.

The scientist has published extensively in journals such as ACS Nano, arXiv (Cornell University), IEEE Transactions on Nanotechnology, Machine Learning Science and Technology, and Nano Futures.

Recognition for Robert A. Wolkow's work includes being named a Fellow of the American Physical Society in 2012, acknowledged for contributions to atomic-scale characterization and fabrication processes with an emphasis on silicon surfaces. They were also named a Fellow of the Royal Society of Canada in 2000 under the Academy of Science, and received the Rutherford Memorial Medal in Physics from the Royal Society of Canada in 1999.

Best Publications

  • Direct observation of an increase in buckled dimers on Si(001) at low temperature.

    Robert A. Wolkow

  • Controlled molecular adsorption on silicon: laying a foundation for molecular devices.

    Robert A. Wolkow

  • Self-directed growth of molecular nanostructures on silicon

    G. P. Lopinski;D. D. M. Wayner;R. A. Wolkow

  • Atom-resolved surface chemistry using scanning tunneling microscopy.

    R. Wolkow;Ph. Avouris

  • Organic modification of hydrogen terminated silicon surfaces

    Danial D. M. Wayner;Robert A. Wolkow

  • Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopy.

    Ph Avouris;R. Wolkow

  • Field regulation of single-molecule conductivity by a charged surface atom

    Paul G. Piva;Gino A. DiLabio;Jason L. Pitters;Janik Zikovsky

  • Determination of the absolute chirality of individual adsorbed molecules using the scanning tunnelling microscope

    G. P. Lopinski;D. J. Moffatt;D. D. M. Wayner;R. A. Wolkow

  • Application of 25 density functionals to dispersion-bound homomolecular dimers

    Erin R. Johnson;Robert A. Wolkow;Robert A. Wolkow;Gino A. DiLabio

  • Controlled coupling and occupation of silicon atomic quantum dots at room temperature.

    M. Baseer Haider;Jason L. Pitters;Gino A. DiLabio;Lucian Livadaru

  • Nano-tip fabrication by spatially controlled etching

    Mohamed Rezeq;Jason Pitters;Robert Wolkow

  • Olefin additions on H-Si(111): Evidence for a surface chain reaction initiated at isolated dangling bonds

    Ronald L. Cicero;Christopher E. D. Chidsey;Gregory P. Lopinski;Danial D. M. Wayner

  • Patterning of Vinylferrocene on H−Si(100) via Self-Directed Growth of Molecular Lines and STM-Induced Decomposition

    Peter Kruse;Erin R. Johnson;Gino A. DiLabio;Robert A. Wolkow

  • Tungsten nanotip fabrication by spatially controlled field-assisted reaction with nitrogen

    Moh’d Rezeq;Jason Pitters;Robert Wolkow

  • Isolation of an intrinsic precursor to molecular chemisorption

    David E. Brown;Douglas J. Moffatt;Robert A. Wolkow

  • Autonomous Scanning Probe Microscopy in Situ Tip Conditioning through Machine Learning

    Mohammad Rashidi;Robert A. Wolkow

  • Multiple bonding geometries and binding state conversion of benzene/Si(100)

    G. P. Lopinski;T. M. Fortier;D. J. Moffatt;R. A. Wolkow

  • Surface relaxations, current enhancements, and absolute distances in high resolution scanning tunneling microscopy.

    W. A. Hofer;A. J. Fisher;R. A. Wolkow;P. Grütter

  • Inducing desorption of organic molecules with a scanning tunneling microscope: theory and experiments.

    Saman Alavi;Roger Rousseau;S. N. Patitsas;Gregory P. Lopinski

  • BENZENE/SI(100) : METASTABLE CHEMISORPTION AND BINDING STATE CONVERSION

    G.P Lopinski;D.J Moffatt;R.A Wolkow

Frequent Co-Authors

Gino A. DiLabio
Gino A. DiLabio University of British Columbia
Hong Guo
Hong Guo McGill University
Martin Moskovits
Martin Moskovits University of California, Santa Barbara
Phaedon Avouris
Phaedon Avouris IBM (United States)
Wei Ji
Wei Ji Renmin University of China
Barry C. Sanders
Barry C. Sanders University of Calgary
Erin R. Johnson
Erin R. Johnson Dalhousie University
Danial D. M. Wayner
Danial D. M. Wayner National Research Council Canada
David W. McComb
David W. McComb The Ohio State University
Jeremy T. Robinson
Jeremy T. Robinson United States Naval Research Laboratory

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