2012 - Fellow of American Physical Society (APS) Citation For contributions to atomicscale characterization and fabrication processes with an emphasis on silicon surfaces
2000 - Fellow of the Royal Society of Canada Academy of Science
1999 - Rutherford Memorial Medal in Physics, Royal Society of Canada
Robert A. Wolkow mostly deals with Scanning tunneling microscope, Silicon, Adsorption, Molecule and Chemical physics. The various areas that Robert A. Wolkow examines in his Scanning tunneling microscope study include Surface diffusion, Molecular physics and Analytical chemistry. His studies deal with areas such as Electron and Nanotechnology as well as Silicon.
The study incorporates disciplines such as Photochemistry and Electric field in addition to Adsorption. His study looks at the intersection of Molecule and topics like Quantum tunnelling with Atomic physics, Atom, Chirality and Absolute configuration. His study looks at the relationship between Chemical physics and topics such as Conductivity, which overlap with Atomic units, Thermal conduction, Field and Characterization.
His primary areas of study are Silicon, Scanning tunneling microscope, Dangling bond, Molecular physics and Atomic physics. His Silicon research incorporates themes from Chemical physics, Hydrogen, Nanotechnology, Molecule and Analytical chemistry. The Scanning tunneling microscope study combines topics in areas such as Crystallography, Optoelectronics and Atomic units.
His Dangling bond research incorporates elements of Quantum dot, Quantum computer, Condensed matter physics, Dopant and Electron. In his work, Density of states is strongly intertwined with Density functional theory, which is a subfield of Molecular physics. His Atomic physics research is multidisciplinary, incorporating perspectives in Field, Atom, Ion beam, Ion source and Quantum tunnelling.
His primary areas of investigation include Optoelectronics, Scanning tunneling microscope, Silicon, Dangling bond and Atomic units. His Dopant study in the realm of Optoelectronics connects with subjects such as Computer data storage. Robert A. Wolkow interconnects Lithography, Characterization, Molecule and Convolutional neural network, Artificial intelligence in the investigation of issues within Scanning tunneling microscope.
His Silicon study combines topics from a wide range of disciplines, such as Molecular physics, Atom and Semiconductor. As part of one scientific family, he deals mainly with the area of Dangling bond, narrowing it down to issues related to the Quantum dot, and often Nanoelectronics, Band gap and Atoms in molecules. His research investigates the link between Atomic units and topics such as Nanotechnology that cross with problems in Thermal stability.
His scientific interests lie mostly in Quantum dot, Silicon, Optoelectronics, Scanning tunneling microscope and Dangling bond. While working in this field, he studies both Silicon and OR gate. His work in the fields of Optoelectronics, such as Hydrogen-terminated silicon surface and Dopant, intersects with other areas such as Local environment and Science, technology and society.
He has researched Scanning tunneling microscope in several fields, including Scanning probe microscopy, Lithography, Characterization and Convolutional neural network, Artificial intelligence. His biological study spans a wide range of topics, including Hydrogen, Molecular physics, Atom, Charge and Position. His studies in Semiconductor integrate themes in fields like Chemical physics, Nanotechnology, Thermal stability and Electric field.
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Direct observation of an increase in buckled dimers on Si(001) at low temperature.
Robert A. Wolkow.
Physical Review Letters (1992)
Controlled molecular adsorption on silicon: laying a foundation for molecular devices.
Robert A. Wolkow.
Annual Review of Physical Chemistry (1999)
Self-directed growth of molecular nanostructures on silicon
G. P. Lopinski;D. D. M. Wayner;R. A. Wolkow.
Atom-resolved surface chemistry using scanning tunneling microscopy.
R. Wolkow;Ph. Avouris.
Physical Review Letters (1988)
Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopy.
Ph Avouris;R. Wolkow.
Physical Review B (1989)
Organic modification of hydrogen terminated silicon surfaces
Danial D. M. Wayner;Robert A. Wolkow.
Journal of The Chemical Society-perkin Transactions 1 (2002)
Field regulation of single-molecule conductivity by a charged surface atom
Paul G. Piva;Gino A. DiLabio;Jason L. Pitters;Janik Zikovsky.
Determination of the absolute chirality of individual adsorbed molecules using the scanning tunnelling microscope
G. P. Lopinski;D. J. Moffatt;D. D. M. Wayner;R. A. Wolkow.
Application of 25 density functionals to dispersion-bound homomolecular dimers
Erin R. Johnson;Robert A. Wolkow;Robert A. Wolkow;Gino A. DiLabio.
Chemical Physics Letters (2004)
Controlled coupling and occupation of silicon atomic quantum dots at room temperature.
M. Baseer Haider;Jason L. Pitters;Gino A. DiLabio;Lucian Livadaru.
Physical Review Letters (2009)
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