Rafael Reif

Research.com Recognitions

• 1993 - IEEE Fellow For pioneering work in the low-temperature epitaxial growth of semiconductor thin films.

Overview

Best Publications

• Interconnect limits on gigascale integration (GSI) in the 21st century

  J.A. Davis;R. Venkatesan;A. Kaloyeros;M. Beylansky

  865
  Citations

• Copper Wafer Bonding

  A. Fan;A. Rahman;R. Reif

  320
  Citations

• Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

  Unknown

  313
  Citations

• System-level performance evaluation of three-dimensional integrated circuits

  A. Rahman;R. Reif

  261
  Citations

• Wiring requirement and three-dimensional integration technology for field programmable gate arrays

  A. Rahman;S. Das;A.P. Chandrakasan;R. Reif

  249
  Citations

• Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications

  Noriyoshi Yamauchi;Rafael Reif

  233
  Citations

• Technology, performance, and computer-aided design of three-dimensional integrated circuits

  Shamik Das;Andy Fan;Kuan-Neng Chen;Chuan Seng Tan

  211
  Citations

• Morphology and Bond Strength of Copper Wafer Bonding

  Kuan-Neng Chen;C. S. Tan;A. Fan;R. Reif

  204
  Citations

• Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film

  N. Yamauchi;J.-J.J. Hajjar;R. Reif

  178
  Citations

• Fabrication technologies for three-dimensional integrated circuits

  R. Reif;A. Fan;Kuan-Neng Chen;S. Das

  176
  Citations

• Design tools for 3-D integrated circuits

  Shamik Das;Anantha Chandrakasan;Rafael Reif

  163
  Citations

• Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality

  R.S. Naik;J.J. Lutsky;R. Reif;C.G. Sodini

  146
  Citations

• Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement

  Unknown

  125
  Citations

• Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial silicon deposition. I. Process considerations

  James H. Comfort;Linda M. Garverick;Rafael Reif

  123
  Citations

• Electromechanical coupling constant extraction of thin-film piezoelectric materials using a bulk acoustic wave resonator

  R.S. Naik;J.J. Lutsky;R. Reif;C.G. Sodini

  120
  Citations

• Air‐bridge microcavities

  Pierre R. Villeneuve;Shanhui Fan;J. D. Joannopoulos;Kuo‐Yi Lim

  119
  Citations

• Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures I . Very Low Pressure Deposition

  James H. Comfort;Rafael Reif

  116
  Citations

• Three-dimensional integrated circuits: performance, design methodology, and CAD tools

  S. Das;A. Chandrakasan;R. Reif

  115
  Citations

• Low‐Temperature Deposition of Highly Textured Aluminum Nitride by Direct Current Magnetron Sputtering for Applications in Thin‐Film Resonators

  R. S. Naik;R. Reif;J. J. Lutsky;C. G. Sodini

  107
  Citations

• Temperature dependence of Si1−xGex epitaxial growth using very low pressure chemical vapor deposition

  Syun‐Ming Jang;Rafael Reif

  104
  Citations

• Microstructure examination of copper wafer bonding

  Kuan-Neng Chen;Andy Fan;Rafael Reif

  103
  Citations

• Bonding parameters of blanket copper wafer bonding

  Kuan-Neng Chen;A. Fan;C. S. Tan;R. Reif

  97
  Citations

• Silicon Multilayer Stacking Based on Copper Wafer Bonding

  C. S. Tan;R. Reif

  91
  Citations

• Plasma-Enhanced Chemical Vapor Deposition

  Prabha K. Tedrow;Rafael Reif

  90
  Citations