World's Best Scientists 2026 revealed!
Rafael Reif

Rafael Reif

D-Index & Metrics

Engineering and Technology

D-Index
48
Citations
8414
World Ranking
4598
National Ranking
1325

Rafael Reif publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Rafael Reif sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 134 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 117 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 59 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 229 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Rafael Reif D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Rafael Reif sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 128 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 349 scientists 41 D-Index: 362 scientists 42 D-Index: 425 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 94 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 24 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 48 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 1993 - IEEE Fellow For pioneering work in the low-temperature epitaxial growth of semiconductor thin films.

Overview

Rafael Reif is affiliated with the Massachusetts Institute of Technology (MIT) in the United States. Their academic and professional activities are associated with this institution.

In 1993, Rafael Reif was recognized as an IEEE Fellow. The award citation notes it was awarded for pioneering work in the low-temperature epitaxial growth of semiconductor thin films.

Best Publications

  • Interconnect limits on gigascale integration (GSI) in the 21st century

    J.A. Davis;R. Venkatesan;A. Kaloyeros;M. Beylansky

  • Copper Wafer Bonding

    A. Fan;A. Rahman;R. Reif

  • Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

    Unknown

  • System-level performance evaluation of three-dimensional integrated circuits

    A. Rahman;R. Reif

  • Wiring requirement and three-dimensional integration technology for field programmable gate arrays

    A. Rahman;S. Das;A.P. Chandrakasan;R. Reif

  • Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications

    Noriyoshi Yamauchi;Rafael Reif

  • Technology, performance, and computer-aided design of three-dimensional integrated circuits

    Shamik Das;Andy Fan;Kuan-Neng Chen;Chuan Seng Tan

  • Morphology and Bond Strength of Copper Wafer Bonding

    Kuan-Neng Chen;C. S. Tan;A. Fan;R. Reif

  • Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film

    N. Yamauchi;J.-J.J. Hajjar;R. Reif

  • Fabrication technologies for three-dimensional integrated circuits

    R. Reif;A. Fan;Kuan-Neng Chen;S. Das

  • Design tools for 3-D integrated circuits

    Shamik Das;Anantha Chandrakasan;Rafael Reif

  • Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality

    R.S. Naik;J.J. Lutsky;R. Reif;C.G. Sodini

  • Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement

    Unknown

  • Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial silicon deposition. I. Process considerations

    James H. Comfort;Linda M. Garverick;Rafael Reif

  • Electromechanical coupling constant extraction of thin-film piezoelectric materials using a bulk acoustic wave resonator

    R.S. Naik;J.J. Lutsky;R. Reif;C.G. Sodini

  • Air‐bridge microcavities

    Pierre R. Villeneuve;Shanhui Fan;J. D. Joannopoulos;Kuo‐Yi Lim

  • Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures I . Very Low Pressure Deposition

    James H. Comfort;Rafael Reif

  • Three-dimensional integrated circuits: performance, design methodology, and CAD tools

    S. Das;A. Chandrakasan;R. Reif

  • Low‐Temperature Deposition of Highly Textured Aluminum Nitride by Direct Current Magnetron Sputtering for Applications in Thin‐Film Resonators

    R. S. Naik;R. Reif;J. J. Lutsky;C. G. Sodini

  • Temperature dependence of Si1−xGex epitaxial growth using very low pressure chemical vapor deposition

    Syun‐Ming Jang;Rafael Reif

  • Microstructure examination of copper wafer bonding

    Kuan-Neng Chen;Andy Fan;Rafael Reif

  • Bonding parameters of blanket copper wafer bonding

    Kuan-Neng Chen;A. Fan;C. S. Tan;R. Reif

  • Silicon Multilayer Stacking Based on Copper Wafer Bonding

    C. S. Tan;R. Reif

  • Plasma-Enhanced Chemical Vapor Deposition

    Prabha K. Tedrow;Rafael Reif

Frequent Co-Authors

Kuan-Neng Chen
Kuan-Neng Chen National Yang Ming Chiao Tung University
Chuan Seng Tan
Chuan Seng Tan Nanyang Technological University
Hyoun Woo Kim
Hyoun Woo Kim Hanyang University
Shanhui Fan
Shanhui Fan Stanford University
David D. Wentzloff
David D. Wentzloff University of Michigan–Ann Arbor
Chongmu Lee
Chongmu Lee Inha University
Yves J. Chabal
Yves J. Chabal The University of Texas at Dallas

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