D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 34 Citations 5,641 172 World Ranking 3698 National Ranking 1421

Research.com Recognitions

Awards & Achievements

1994 - IEEE Fellow For contributions in microwave semiconductor technology.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Composite material

His main research concerns Chemical-mechanical planarization, Optoelectronics, Electronic engineering, Copper and Wafer. His Chemical-mechanical planarization study is focused on Nanotechnology in general. His study focuses on the intersection of Optoelectronics and fields such as Gallium nitride with connections in the field of Silicon on insulator.

He combines subjects such as Chip, Electrical engineering, Silicon and Silicon carbide with his study of Electronic engineering. Ronald J. Gutmann has researched Copper in several fields, including Diffusion barrier, Polishing and Dielectric. His Wafer research is multidisciplinary, incorporating perspectives in Composite material and Wire bonding.

His most cited work include:

  • Chemical Mechanical Planarization of Microelectronic Materials (631 citations)
  • Adhesive wafer bonding (430 citations)
  • Advanced multilayer metallization schemes with copper as interconnection metal (218 citations)

What are the main themes of his work throughout his whole career to date?

Ronald J. Gutmann mostly deals with Optoelectronics, Wafer, Composite material, Chemical-mechanical planarization and Electronic engineering. Optoelectronics and High voltage are commonly linked in his work. Ronald J. Gutmann works in the field of Wafer, focusing on Wafer bonding in particular.

Ronald J. Gutmann studied Wafer bonding and Anodic bonding that intersect with Thermocompression bonding. His studies deal with areas such as Slurry, Chemical engineering and Copper as well as Chemical-mechanical planarization. His research integrates issues of Silicon and Electrical engineering, Integrated circuit in his study of Electronic engineering.

He most often published in these fields:

  • Optoelectronics (42.69%)
  • Wafer (23.72%)
  • Composite material (18.58%)

What were the highlights of his more recent work (between 2005-2012)?

  • Wafer bonding (14.23%)
  • Wafer (23.72%)
  • Composite material (18.58%)

In recent papers he was focusing on the following fields of study:

Ronald J. Gutmann mainly focuses on Wafer bonding, Wafer, Composite material, Optoelectronics and Anodic bonding. His Wafer bonding research incorporates elements of Redistribution layer, Adhesive bonding and Copper interconnect. His Wafer study combines topics from a wide range of disciplines, such as Chemical engineering, Three dimensional integration and Integrated circuit.

His work in Composite material covers topics such as Dielectric which are related to areas like Wafer-level packaging, Tantalum and Metallurgy. His Optoelectronics research is multidisciplinary, relying on both Electrical engineering and Epitaxy. He is studying Chemical-mechanical planarization, which is a component of Nanotechnology.

Between 2005 and 2012, his most popular works were:

  • Adhesive wafer bonding (430 citations)
  • Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration (63 citations)
  • 3D Power Delivery for Microprocessors and High-Performance ASICs (58 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Composite material

His primary areas of study are Wafer bonding, Anodic bonding, Wafer, Composite material and Benzocyclobutene. In Wafer bonding, Ronald J. Gutmann works on issues like Copper interconnect, which are connected to Chemical-mechanical planarization. His Anodic bonding study also includes fields such as

  • Adhesive which connect with Metal,
  • Thermocompression bonding most often made with reference to Wire bonding,
  • Crystallography that intertwine with fields like Silicon, Semiconductor device, Mechanical integrity, Extrusion and Auger electron spectroscopy,
  • Transmission electron microscopy that connect with fields like Optoelectronics.

As part of the same scientific family, Ronald J. Gutmann usually focuses on Wafer, concentrating on Adhesive bonding and intersecting with Void. His work on von Mises yield criterion, Low-k dielectric and Stress as part of general Composite material study is frequently connected to Bond energy, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His Benzocyclobutene study combines topics in areas such as Adhesion, Plastic dissipation, Oxide and Plasma-enhanced chemical vapor deposition.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Chemical Mechanical Planarization of Microelectronic Materials

Joseph M. Steigerwald;Shyam P. Murarka;Ronald J. Gutmann.
(1997)

992 Citations

Adhesive wafer bonding

Frank Niklaus;Göran Stemme;J. Q. Lu;R. J. Gutmann.
Journal of Applied Physics (2006)

592 Citations

Advanced multilayer metallization schemes with copper as interconnection metal

S.P. Murarka;R.J. Gutmann;A.E. Kaloyeros;W.A. Lanford.
Thin Solid Films (1993)

304 Citations

Recombination processes in doubly capped antimonide-based quaternary thin films

Sudesh Saroop;Jose M. Borrego;Ronald J. Gutmann;Greg W. Charache.
Journal of Applied Physics (1999)

252 Citations

Chemical processes in the chemical mechanical polishing of copper

J.M. Steigerwald;S.P. Murarka;R.J. Gutmann;D.J. Duquette.
Materials Chemistry and Physics (1995)

245 Citations

Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures

J. M. Steigerwald;R. Zirpoli;S. P. Murarka;D. Price.
Journal of The Electrochemical Society (1994)

221 Citations

High-voltage normally off GaN MOSFETs on sapphire substrates

K. Matocha;T.P. Chow;R.J. Gutmann.
IEEE Transactions on Electron Devices (2005)

207 Citations

Electrical characteristics of GaAs MIS Schottky diodes

S. Ashok;J.M. Borrego;R.J. Gutmann.
Solid-state Electronics (1979)

187 Citations

Application of RF Circuit Design Principles to Distributed Power Converters

Ronald J. Gutmann.
IEEE Transactions on Industrial Electronics and Control Instrumentation (1980)

171 Citations

Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics

Y. Xiao;H. Shah;T.P. Chow;R.J. Gutmann.
applied power electronics conference (2004)

165 Citations

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