World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
47
Citations
9535
World Ranking
4813
National Ranking
1382

Ronald J. Gutmann publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Ronald J. Gutmann sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 327 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Ronald J. Gutmann D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Ronald J. Gutmann sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 47 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 1994 - IEEE Fellow For contributions in microwave semiconductor technology.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Composite material

His main research concerns Chemical-mechanical planarization, Optoelectronics, Electronic engineering, Copper and Wafer. His Chemical-mechanical planarization study is focused on Nanotechnology in general. His study focuses on the intersection of Optoelectronics and fields such as Gallium nitride with connections in the field of Silicon on insulator.

He combines subjects such as Chip, Electrical engineering, Silicon and Silicon carbide with his study of Electronic engineering. Ronald J. Gutmann has researched Copper in several fields, including Diffusion barrier, Polishing and Dielectric. His Wafer research is multidisciplinary, incorporating perspectives in Composite material and Wire bonding.

His most cited work include:

  • Chemical Mechanical Planarization of Microelectronic Materials (631 citations)
  • Adhesive wafer bonding (430 citations)
  • Advanced multilayer metallization schemes with copper as interconnection metal (218 citations)

What are the main themes of his work throughout his whole career to date?

Ronald J. Gutmann mostly deals with Optoelectronics, Wafer, Composite material, Chemical-mechanical planarization and Electronic engineering. Optoelectronics and High voltage are commonly linked in his work. Ronald J. Gutmann works in the field of Wafer, focusing on Wafer bonding in particular.

Ronald J. Gutmann studied Wafer bonding and Anodic bonding that intersect with Thermocompression bonding. His studies deal with areas such as Slurry, Chemical engineering and Copper as well as Chemical-mechanical planarization. His research integrates issues of Silicon and Electrical engineering, Integrated circuit in his study of Electronic engineering.

He most often published in these fields:

  • Optoelectronics (42.69%)
  • Wafer (23.72%)
  • Composite material (18.58%)

What were the highlights of his more recent work (between 2005-2012)?

  • Wafer bonding (14.23%)
  • Wafer (23.72%)
  • Composite material (18.58%)

In recent papers he was focusing on the following fields of study:

Ronald J. Gutmann mainly focuses on Wafer bonding, Wafer, Composite material, Optoelectronics and Anodic bonding. His Wafer bonding research incorporates elements of Redistribution layer, Adhesive bonding and Copper interconnect. His Wafer study combines topics from a wide range of disciplines, such as Chemical engineering, Three dimensional integration and Integrated circuit.

His work in Composite material covers topics such as Dielectric which are related to areas like Wafer-level packaging, Tantalum and Metallurgy. His Optoelectronics research is multidisciplinary, relying on both Electrical engineering and Epitaxy. He is studying Chemical-mechanical planarization, which is a component of Nanotechnology.

Between 2005 and 2012, his most popular works were:

  • Adhesive wafer bonding (430 citations)
  • Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration (63 citations)
  • 3D Power Delivery for Microprocessors and High-Performance ASICs (58 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Composite material

His primary areas of study are Wafer bonding, Anodic bonding, Wafer, Composite material and Benzocyclobutene. In Wafer bonding, Ronald J. Gutmann works on issues like Copper interconnect, which are connected to Chemical-mechanical planarization. His Anodic bonding study also includes fields such as

  • Adhesive which connect with Metal,
  • Thermocompression bonding most often made with reference to Wire bonding,
  • Crystallography that intertwine with fields like Silicon, Semiconductor device, Mechanical integrity, Extrusion and Auger electron spectroscopy,
  • Transmission electron microscopy that connect with fields like Optoelectronics.

As part of the same scientific family, Ronald J. Gutmann usually focuses on Wafer, concentrating on Adhesive bonding and intersecting with Void. His work on von Mises yield criterion, Low-k dielectric and Stress as part of general Composite material study is frequently connected to Bond energy, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His Benzocyclobutene study combines topics in areas such as Adhesion, Plastic dissipation, Oxide and Plasma-enhanced chemical vapor deposition.

Best Publications

  • Chemical Mechanical Planarization of Microelectronic Materials

    Joseph M. Steigerwald;Shyam P. Murarka;Ronald J. Gutmann

  • Adhesive wafer bonding

    Frank Niklaus;Göran Stemme;J. Q. Lu;R. J. Gutmann

  • Wafer Level 3-D ICs Process Technology

    Chuan Seng Tan;Ronald J. Gutmann;L. Rafael J. Reif

  • Advanced multilayer metallization schemes with copper as interconnection metal

    S.P. Murarka;R.J. Gutmann;A.E. Kaloyeros;W.A. Lanford

  • Chemical processes in the chemical mechanical polishing of copper

    J.M. Steigerwald;S.P. Murarka;R.J. Gutmann;D.J. Duquette

  • Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures

    J. M. Steigerwald;R. Zirpoli;S. P. Murarka;D. Price

  • High-voltage normally off GaN MOSFETs on sapphire substrates

    K. Matocha;T.P. Chow;R.J. Gutmann

  • Electrical characteristics of GaAs MIS Schottky diodes

    S. Ashok;J.M. Borrego;R.J. Gutmann

  • Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics

    Y. Xiao;H. Shah;T.P. Chow;R.J. Gutmann

  • Application of RF Circuit Design Principles to Distributed Power Converters

    Ronald J. Gutmann

  • SiC and GaN bipolar power devices

    T.P. Chow;V. Khemka;J. Fedison;N. Ramungul

  • Pad porosity, compressibility and slurry delivery effects in chemical- mechanical planarization: modeling and experiments

    Dipto G Thakurta;Christopher L Borst;Donald W Schwendeman;Ronald J Gutmann

  • Systems for performing chemical mechanical planarization and process for conducting same

    Shyam P. Murarka;Ronald J. Gutmann;David J. Duquette;Joseph M. Steigerwald

  • Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectrics

    Ronald J. Gutmann;Joseph M. Steigerwald;Lu You;David T. Price

  • Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration

    Frank Niklaus;R. J. Kumar;J. J. McMahon;J. Yu

  • Non-destructive lifetime measurement in silicon wafers by microwave reflection

    J.M. Borrego;R.J. Gutmann;N. Jensen;O. Paz

  • Contact and via structures with copper interconnects fabricated using dual Damascene technology

    S. Lakshminarayanan;J. Steigerwald;D.T. Price;M. Bourgeois

  • Design considerations and experimental analysis for silicon carbide power rectifiers

    V Khemka;R Patel;T.P Chow;R.J Gutmann

  • Evaluation procedures for wafer bonding and thinning of interconnect test structures for 3D ICs

    J.-Q. Lu;A. Jindal;Y. Kwon;J.J. McMahon

  • Electrochemical Potential Measurements during the Chemical‐Mechanical Polishing of Copper Thin Films

    J. M. Steigerwald;D. J. Duquette;S. P. Murarka;R. J. Gutmann

  • Air-gaps in 0.3 μm electrical interconnections

    P.A. Kohl;D.M. Bhusari;M. Wedlake;C. Case

Frequent Co-Authors

T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
Yongchai Kwon
Yongchai Kwon Seoul National University of Science and Technology
Frank Niklaus
Frank Niklaus Royal Institute of Technology
Yiping Zhao
Yiping Zhao University of Georgia
Toh-Ming Lu
Toh-Ming Lu Rensselaer Polytechnic Institute
William A. Lanford
William A. Lanford University at Albany, State University of New York
Paul A. Kohl
Paul A. Kohl Georgia Institute of Technology
John R. Williams
John R. Williams Auburn University
Jian Sun
Jian Sun Rensselaer Polytechnic Institute
Anant K. Agarwal
Anant K. Agarwal The Ohio State University

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