World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
47
Citations
9535
World Ranking
4811
National Ranking
1381

Research.com Recognitions

  • 1994 - IEEE Fellow For contributions in microwave semiconductor technology.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Composite material

His main research concerns Chemical-mechanical planarization, Optoelectronics, Electronic engineering, Copper and Wafer. His Chemical-mechanical planarization study is focused on Nanotechnology in general. His study focuses on the intersection of Optoelectronics and fields such as Gallium nitride with connections in the field of Silicon on insulator.

He combines subjects such as Chip, Electrical engineering, Silicon and Silicon carbide with his study of Electronic engineering. Ronald J. Gutmann has researched Copper in several fields, including Diffusion barrier, Polishing and Dielectric. His Wafer research is multidisciplinary, incorporating perspectives in Composite material and Wire bonding.

His most cited work include:

  • Chemical Mechanical Planarization of Microelectronic Materials (631 citations)
  • Adhesive wafer bonding (430 citations)
  • Advanced multilayer metallization schemes with copper as interconnection metal (218 citations)

What are the main themes of his work throughout his whole career to date?

Ronald J. Gutmann mostly deals with Optoelectronics, Wafer, Composite material, Chemical-mechanical planarization and Electronic engineering. Optoelectronics and High voltage are commonly linked in his work. Ronald J. Gutmann works in the field of Wafer, focusing on Wafer bonding in particular.

Ronald J. Gutmann studied Wafer bonding and Anodic bonding that intersect with Thermocompression bonding. His studies deal with areas such as Slurry, Chemical engineering and Copper as well as Chemical-mechanical planarization. His research integrates issues of Silicon and Electrical engineering, Integrated circuit in his study of Electronic engineering.

He most often published in these fields:

  • Optoelectronics (42.69%)
  • Wafer (23.72%)
  • Composite material (18.58%)

What were the highlights of his more recent work (between 2005-2012)?

  • Wafer bonding (14.23%)
  • Wafer (23.72%)
  • Composite material (18.58%)

In recent papers he was focusing on the following fields of study:

Ronald J. Gutmann mainly focuses on Wafer bonding, Wafer, Composite material, Optoelectronics and Anodic bonding. His Wafer bonding research incorporates elements of Redistribution layer, Adhesive bonding and Copper interconnect. His Wafer study combines topics from a wide range of disciplines, such as Chemical engineering, Three dimensional integration and Integrated circuit.

His work in Composite material covers topics such as Dielectric which are related to areas like Wafer-level packaging, Tantalum and Metallurgy. His Optoelectronics research is multidisciplinary, relying on both Electrical engineering and Epitaxy. He is studying Chemical-mechanical planarization, which is a component of Nanotechnology.

Between 2005 and 2012, his most popular works were:

  • Adhesive wafer bonding (430 citations)
  • Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration (63 citations)
  • 3D Power Delivery for Microprocessors and High-Performance ASICs (58 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Composite material

His primary areas of study are Wafer bonding, Anodic bonding, Wafer, Composite material and Benzocyclobutene. In Wafer bonding, Ronald J. Gutmann works on issues like Copper interconnect, which are connected to Chemical-mechanical planarization. His Anodic bonding study also includes fields such as

  • Adhesive which connect with Metal,
  • Thermocompression bonding most often made with reference to Wire bonding,
  • Crystallography that intertwine with fields like Silicon, Semiconductor device, Mechanical integrity, Extrusion and Auger electron spectroscopy,
  • Transmission electron microscopy that connect with fields like Optoelectronics.

As part of the same scientific family, Ronald J. Gutmann usually focuses on Wafer, concentrating on Adhesive bonding and intersecting with Void. His work on von Mises yield criterion, Low-k dielectric and Stress as part of general Composite material study is frequently connected to Bond energy, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His Benzocyclobutene study combines topics in areas such as Adhesion, Plastic dissipation, Oxide and Plasma-enhanced chemical vapor deposition.

Best Publications

  • Chemical Mechanical Planarization of Microelectronic Materials

    Joseph M. Steigerwald;Shyam P. Murarka;Ronald J. Gutmann

  • Adhesive wafer bonding

    Frank Niklaus;Göran Stemme;J. Q. Lu;R. J. Gutmann

  • Wafer Level 3-D ICs Process Technology

    Chuan Seng Tan;Ronald J. Gutmann;L. Rafael J. Reif

  • Advanced multilayer metallization schemes with copper as interconnection metal

    S.P. Murarka;R.J. Gutmann;A.E. Kaloyeros;W.A. Lanford

  • Chemical processes in the chemical mechanical polishing of copper

    J.M. Steigerwald;S.P. Murarka;R.J. Gutmann;D.J. Duquette

  • Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures

    J. M. Steigerwald;R. Zirpoli;S. P. Murarka;D. Price

  • High-voltage normally off GaN MOSFETs on sapphire substrates

    K. Matocha;T.P. Chow;R.J. Gutmann

  • Electrical characteristics of GaAs MIS Schottky diodes

    S. Ashok;J.M. Borrego;R.J. Gutmann

  • Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics

    Y. Xiao;H. Shah;T.P. Chow;R.J. Gutmann

  • Application of RF Circuit Design Principles to Distributed Power Converters

    Ronald J. Gutmann

  • SiC and GaN bipolar power devices

    T.P. Chow;V. Khemka;J. Fedison;N. Ramungul

  • Pad porosity, compressibility and slurry delivery effects in chemical- mechanical planarization: modeling and experiments

    Dipto G Thakurta;Christopher L Borst;Donald W Schwendeman;Ronald J Gutmann

  • Systems for performing chemical mechanical planarization and process for conducting same

    Shyam P. Murarka;Ronald J. Gutmann;David J. Duquette;Joseph M. Steigerwald

  • Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectrics

    Ronald J. Gutmann;Joseph M. Steigerwald;Lu You;David T. Price

  • Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration

    Frank Niklaus;R. J. Kumar;J. J. McMahon;J. Yu

  • Non-destructive lifetime measurement in silicon wafers by microwave reflection

    J.M. Borrego;R.J. Gutmann;N. Jensen;O. Paz

  • Contact and via structures with copper interconnects fabricated using dual Damascene technology

    S. Lakshminarayanan;J. Steigerwald;D.T. Price;M. Bourgeois

  • Design considerations and experimental analysis for silicon carbide power rectifiers

    V Khemka;R Patel;T.P Chow;R.J Gutmann

  • Evaluation procedures for wafer bonding and thinning of interconnect test structures for 3D ICs

    J.-Q. Lu;A. Jindal;Y. Kwon;J.J. McMahon

  • Electrochemical Potential Measurements during the Chemical‐Mechanical Polishing of Copper Thin Films

    J. M. Steigerwald;D. J. Duquette;S. P. Murarka;R. J. Gutmann

  • Air-gaps in 0.3 μm electrical interconnections

    P.A. Kohl;D.M. Bhusari;M. Wedlake;C. Case

Frequent Co-Authors

T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
Yongchai Kwon
Yongchai Kwon Seoul National University of Science and Technology
Frank Niklaus
Frank Niklaus Royal Institute of Technology
Yiping Zhao
Yiping Zhao University of Georgia
Toh-Ming Lu
Toh-Ming Lu Rensselaer Polytechnic Institute
William A. Lanford
William A. Lanford University at Albany, State University of New York
Paul A. Kohl
Paul A. Kohl Georgia Institute of Technology
John R. Williams
John R. Williams Auburn University
Jian Sun
Jian Sun Rensselaer Polytechnic Institute
Anant K. Agarwal
Anant K. Agarwal The Ohio State University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Ronald J. Gutmann

Recently Published Articles