1994 - IEEE Fellow For contributions in microwave semiconductor technology.
His main research concerns Chemical-mechanical planarization, Optoelectronics, Electronic engineering, Copper and Wafer. His Chemical-mechanical planarization study is focused on Nanotechnology in general. His study focuses on the intersection of Optoelectronics and fields such as Gallium nitride with connections in the field of Silicon on insulator.
He combines subjects such as Chip, Electrical engineering, Silicon and Silicon carbide with his study of Electronic engineering. Ronald J. Gutmann has researched Copper in several fields, including Diffusion barrier, Polishing and Dielectric. His Wafer research is multidisciplinary, incorporating perspectives in Composite material and Wire bonding.
Ronald J. Gutmann mostly deals with Optoelectronics, Wafer, Composite material, Chemical-mechanical planarization and Electronic engineering. Optoelectronics and High voltage are commonly linked in his work. Ronald J. Gutmann works in the field of Wafer, focusing on Wafer bonding in particular.
Ronald J. Gutmann studied Wafer bonding and Anodic bonding that intersect with Thermocompression bonding. His studies deal with areas such as Slurry, Chemical engineering and Copper as well as Chemical-mechanical planarization. His research integrates issues of Silicon and Electrical engineering, Integrated circuit in his study of Electronic engineering.
Ronald J. Gutmann mainly focuses on Wafer bonding, Wafer, Composite material, Optoelectronics and Anodic bonding. His Wafer bonding research incorporates elements of Redistribution layer, Adhesive bonding and Copper interconnect. His Wafer study combines topics from a wide range of disciplines, such as Chemical engineering, Three dimensional integration and Integrated circuit.
His work in Composite material covers topics such as Dielectric which are related to areas like Wafer-level packaging, Tantalum and Metallurgy. His Optoelectronics research is multidisciplinary, relying on both Electrical engineering and Epitaxy. He is studying Chemical-mechanical planarization, which is a component of Nanotechnology.
His primary areas of study are Wafer bonding, Anodic bonding, Wafer, Composite material and Benzocyclobutene. In Wafer bonding, Ronald J. Gutmann works on issues like Copper interconnect, which are connected to Chemical-mechanical planarization. His Anodic bonding study also includes fields such as
As part of the same scientific family, Ronald J. Gutmann usually focuses on Wafer, concentrating on Adhesive bonding and intersecting with Void. His work on von Mises yield criterion, Low-k dielectric and Stress as part of general Composite material study is frequently connected to Bond energy, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His Benzocyclobutene study combines topics in areas such as Adhesion, Plastic dissipation, Oxide and Plasma-enhanced chemical vapor deposition.
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Chemical Mechanical Planarization of Microelectronic Materials
Joseph M. Steigerwald;Shyam P. Murarka;Ronald J. Gutmann.
Adhesive wafer bonding
Frank Niklaus;Göran Stemme;J. Q. Lu;R. J. Gutmann.
Journal of Applied Physics (2006)
Advanced multilayer metallization schemes with copper as interconnection metal
S.P. Murarka;R.J. Gutmann;A.E. Kaloyeros;W.A. Lanford.
Thin Solid Films (1993)
Recombination processes in doubly capped antimonide-based quaternary thin films
Sudesh Saroop;Jose M. Borrego;Ronald J. Gutmann;Greg W. Charache.
Journal of Applied Physics (1999)
Chemical processes in the chemical mechanical polishing of copper
J.M. Steigerwald;S.P. Murarka;R.J. Gutmann;D.J. Duquette.
Materials Chemistry and Physics (1995)
Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures
J. M. Steigerwald;R. Zirpoli;S. P. Murarka;D. Price.
Journal of The Electrochemical Society (1994)
High-voltage normally off GaN MOSFETs on sapphire substrates
K. Matocha;T.P. Chow;R.J. Gutmann.
IEEE Transactions on Electron Devices (2005)
Electrical characteristics of GaAs MIS Schottky diodes
S. Ashok;J.M. Borrego;R.J. Gutmann.
Solid-state Electronics (1979)
Application of RF Circuit Design Principles to Distributed Power Converters
Ronald J. Gutmann.
IEEE Transactions on Industrial Electronics and Control Instrumentation (1980)
Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics
Y. Xiao;H. Shah;T.P. Chow;R.J. Gutmann.
applied power electronics conference (2004)
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