World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
51
Citations
11430
World Ranking
9799
National Ranking
2769

Lun Dai publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Lun Dai sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 143 publications — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Lun Dai D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Lun Dai sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Laser

Optoelectronics, Nanowire, Graphene, Photodetector and Schottky diode are his primary areas of study. His Optoelectronics study frequently links to other fields, such as Nanotechnology. His Nanotechnology study integrates concerns from other disciplines, such as Threshold voltage and Transistor.

His Nanowire course of study focuses on Laser and Absorption and Wavelength. Lun Dai has researched Graphene in several fields, including OLED, Anode and Maximum power principle. His studies deal with areas such as Nanoscopic scale, Quantum efficiency and Photoconductivity as well as Photodetector.

His most cited work include:

  • Unusual scaling laws for plasmonic nanolasers beyond the diffraction limit (418 citations)
  • Single-crystalline CdS nanobelts for excellent field-emitters and ultrahigh quantum-efficiency photodetectors. (281 citations)
  • Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions. (265 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Nanowire, Semiconductor, Nanotechnology and Graphene. His Optoelectronics research includes elements of Transistor and Laser. His research integrates issues of Absorption and Plasmon in his study of Laser.

Lun Dai has included themes like Wavelength, Photoluminescence, Optics, Doping and Field-effect transistor in his Nanowire study. His biological study deals with issues like Lasing threshold, which deal with fields such as Perovskite. His research in Graphene intersects with topics in Substrate, Anode and Microelectronics.

He most often published in these fields:

  • Optoelectronics (67.77%)
  • Nanowire (33.88%)
  • Semiconductor (20.66%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (67.77%)
  • Condensed matter physics (14.88%)
  • Semiconductor (20.66%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Condensed matter physics, Semiconductor, Perovskite and Heterojunction. Lun Dai has researched Optoelectronics in several fields, including Hexagonal boron nitride and Caesium. His work in Semiconductor addresses issues such as Transistor, which are connected to fields such as Electrical contacts and Contact resistance.

His work carried out in the field of Perovskite brings together such families of science as Halide, Laser and Light source. His biological study spans a wide range of topics, including Graphene, Electroluminescence, Photodetector and Nanomaterials. Within one scientific family, he focuses on topics pertaining to Nanostructure under Electroluminescence, and may sometimes address concerns connected to Nanowire.

Between 2018 and 2021, his most popular works were:

  • Single-nanowire spectrometers (57 citations)
  • Two-dimensional ferromagnetism and driven ferroelectricity in van der Waals CuCrP2S6. (30 citations)
  • Millimeter-Scale Single-Crystalline Semiconducting MoTe2 via Solid-to-Solid Phase Transformation. (29 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Laser

Lun Dai spends much of his time researching Semiconductor, Optoelectronics, Transistor, Phase and Engineering physics. His Semiconductor research is multidisciplinary, relying on both Hexagonal boron nitride, NMOS logic, Hysteresis, CMOS and Contact resistance. When carried out as part of a general Optoelectronics research project, his work on Electrical contacts is frequently linked to work in Scale down, therefore connecting diverse disciplines of study.

His Phase research incorporates a variety of disciplines, including Crystallite, Density functional theory, Raman spectroscopy, Spectroscopy and Nucleation. Engineering physics is frequently linked to Quantum Hall effect in his study.

Best Publications

  • Plasmon lasers at deep subwavelength scale

    Xiang Zhang;Volker Jendrik Sorger;Rupert Francis Maximillian Oulton;Ren-Min Ma

  • Single-nanowire spectrometers

    Zongyin Yang;Thomas Albrow-Owen;Hanxiao Cui;Jack Allen Alexander-Webber

  • Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions.

    Ya-Qing Bie;Zhi-Min Liao;Hong-Zhou Zhang;Guang-Ru Li

  • Single-crystalline CdS nanobelts for excellent field-emitters and ultrahigh quantum-efficiency photodetectors.

    Liang Li;Pei Cai Wu;Xiao Sheng Fang;Tian You Zhai

  • Unusual scaling laws for plasmonic nanolasers beyond the diffraction limit

    Suo Wang;Xing-Yuan Wang;Bo Li;Hua-Zhou Chen

  • Single-nanowire single-mode laser.

    Yao Xiao;Chao Meng;Pan Wang;Yu Ye

  • Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

    Ruge Quhe;Qiuhui Li;Qiaoxuan Zhang;Yangyang Wang

  • Measuring the refractive index of highly crystalline monolayer MoS2 with high confidence

    Hui Zhang;Yaoguang Ma;Yi Wan;Xin Rong

  • Ultrasensitive Near-Infrared Photodetectors Based on a Graphene–MoTe2–Graphene Vertical van der Waals Heterostructure

    Kun Zhang;Xin Fang;Yilun Wang;Yi Wan

  • High-Performance Logic Circuits Constructed on Single CdS Nanowires

    Ren-Min Ma;Lun Dai;Hai-Bin Huo;Wan-Jin Xu

  • Multilayered graphene used as anode of organic light emitting devices

    T. Sun;Z. L. Wang;Z. J. Shi;G. Z. Ran

  • Two-dimensional ferromagnetism and driven ferroelectricity in van der Waals CuCrP2S6.

    Youfang Lai;Zhigang Song;Zhigang Song;Yi Wan;Mingzhu Xue

  • High-performance nano-Schottky diodes and nano-MESFETs made on single CdS nanobelts.

    Ren-Min Ma;Lun Dai;Guo-Gang Qin

  • Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices

    R. M. Ma;L. Dai;H. B. Huo;W. Q. Yang

  • The In-Plane Anisotropy of WTe2 Investigated by Angle-Dependent and Polarized Raman Spectroscopy.

    Qingjun Song;Xingchen Pan;Haifeng Wang;Kun Zhang

  • Semiconductor nanowire lasers

    Yaoguang Ma;Xin Guo;Xiaoqin Wu;Lun Dai

  • Millimeter-Scale Single-Crystalline Semiconducting MoTe2 via Solid-to-Solid Phase Transformation.

    Xiaolong Xu;Shulin Chen;Shuai Liu;Xing Cheng

  • In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide.

    Xiaolong Xu;Qingjun Song;Haifeng Wang;Haifeng Wang;Pan Li

  • Self-powered high performance photodetectors based on CdSe nanobelt/graphene Schottky junctions

    Weifeng Jin;Yu Ye;Lin Gan;Bin Yu

  • High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

    Yu Ye;Yu Dai;Lun Dai;Zujin Shi

  • Wavelength tunable CdSe nanowire lasers based on the absorption-emission-absorption process.

    Jiabei Li;Chao Meng;Ying Liu;Xiaoqin Wu

  • Data for: Single-nanowire spectrometers

    Zongyin Yang;Tom Albrow-Owen;Hanxiao Cui;Jack Allen Alexander-Webber

Frequent Co-Authors

Yu Ye
Yu Ye Peking University
Xiang Zhang
Xiang Zhang University of Hong Kong
Rupert F. Oulton
Rupert F. Oulton Imperial College London
Limin Tong
Limin Tong Zhejiang University
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Zujin Shi
Zujin Shi Peking University
Volker J. Sorger
Volker J. Sorger George Washington University
Hongxing Jiang
Hongxing Jiang Texas Tech University
Qing Yang
Qing Yang Zhejiang University

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