K. L. Pey

Best Publications

• Recommended Methods to Study Resistive Switching Devices

  Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  641
  Citations

• Dielectric breakdown mechanisms in gate oxides

  Salvatore Lombardo;James H. Stathis;Barry P. Linder;Kin Leong Pey

  548
  Citations

• Standards for the Characterization of Endurance in Resistive Switching Devices.

  Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  231
  Citations

• Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

  A. Heryanto;A. Heryanto;W. N. Putra;W. N. Putra;Alastair David Trigg;S. Gao

  185
  Citations

• Excimer laser-annealed dopant segregated Schottky (ELA-DSS) Si nanowire gate-all-around (GAA) pFET with near zero effective Schottky barrier height (SBH)

  Y. K. Chin;K. L. Pey;N. Singh;G. Q. Lo

  151
  Citations

• The nature of dielectric breakdown

  Unknown

  129
  Citations

• Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells

  X. Wang;K. L. Pey;C. H. Yip;E. A. Fitzgerald

  123
  Citations

• Two-dimensional analytical Mott-Gurney law for a trap-filled solid

  Unknown

  116
  Citations

• Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

  Unknown

  115
  Citations

• Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

  Y. F. Chong;K. L. Pey;A. T. S. Wee;A. See

  108
  Citations

• Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

  Unknown

  97
  Citations

• Influence of Bosch Etch Process on Electrical Isolation of TSV Structures

  N. Ranganathan;Da Yong Lee;Liu Youhe;Guo-Qiang Lo

  85
  Citations

• Intrinsic nanofilamentation in resistive switching

  Xing Wu;Dongkyu Cha;Michel Bosman;Nagarajan Raghavan

  84
  Citations

• Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

  H. B. Zhao;Kin Leong Pey;W. K. Choi;Sujay Chattopadhyay

  80
  Citations

• Thermal reaction of nickel and Si0.75Ge0.25 alloy

  K. L. Pey;W. K. Choi;S. Chattopadhyay;H. B. Zhao

  77
  Citations

• A High-Yield $\hbox{HfO}_{x}$ -Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

  X A Tran;H Y Yu;Y C Yeo;L Wu

  73
  Citations

• A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain

  Guojun Zhu;Xing Zhou;Teck Seng Lee;Lay Kee Ang

  64
  Citations

• Femtosecond laser induced surface nanostructuring and simultaneous crystallization of amorphous thin silicon film

  X. C. Wang;H. Y. Zheng;C. W. Tan;F. Wang

  64
  Citations

• Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films.

  A Ranjan;N Raghavan;S J O'Shea;S Mei;S Mei

  62
  Citations

• On the Ni-Si phase transformation with/without native oxide

  P. S. Lee;D. Mangelinck;K. L. Pey;J. Ding

  59
  Citations