World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
8107
World Ranking
5044
National Ranking
81

K. L. Pey publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where K. L. Pey sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 417 publications — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

K. L. Pey D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where K. L. Pey sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Dielectric breakdown mechanisms in gate oxides

    Salvatore Lombardo;James H. Stathis;Barry P. Linder;Kin Leong Pey

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

    A. Heryanto;A. Heryanto;W. N. Putra;W. N. Putra;Alastair David Trigg;S. Gao

  • Excimer laser-annealed dopant segregated Schottky (ELA-DSS) Si nanowire gate-all-around (GAA) pFET with near zero effective Schottky barrier height (SBH)

    Y. K. Chin;K. L. Pey;N. Singh;G. Q. Lo

  • The nature of dielectric breakdown

    Unknown

  • Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells

    X. Wang;K. L. Pey;C. H. Yip;E. A. Fitzgerald

  • Two-dimensional analytical Mott-Gurney law for a trap-filled solid

    Unknown

  • Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

    Unknown

  • Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

    Y. F. Chong;K. L. Pey;A. T. S. Wee;A. See

  • Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

    Unknown

  • Influence of Bosch Etch Process on Electrical Isolation of TSV Structures

    N. Ranganathan;Da Yong Lee;Liu Youhe;Guo-Qiang Lo

  • Intrinsic nanofilamentation in resistive switching

    Xing Wu;Dongkyu Cha;Michel Bosman;Nagarajan Raghavan

  • Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

    H. B. Zhao;Kin Leong Pey;W. K. Choi;Sujay Chattopadhyay

  • Thermal reaction of nickel and Si0.75Ge0.25 alloy

    K. L. Pey;W. K. Choi;S. Chattopadhyay;H. B. Zhao

  • A High-Yield $\hbox{HfO}_{x}$ -Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

    X A Tran;H Y Yu;Y C Yeo;L Wu

  • A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain

    Guojun Zhu;Xing Zhou;Teck Seng Lee;Lay Kee Ang

  • Femtosecond laser induced surface nanostructuring and simultaneous crystallization of amorphous thin silicon film

    X. C. Wang;H. Y. Zheng;C. W. Tan;F. Wang

  • Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films.

    A Ranjan;N Raghavan;S J O'Shea;S Mei;S Mei

  • On the Ni-Si phase transformation with/without native oxide

    P. S. Lee;D. Mangelinck;K. L. Pey;J. Ding

Frequent Co-Authors

Michel Bosman
Michel Bosman National University of Singapore
Xing Wu
Xing Wu East China Normal University
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia
Jian Zhang
Jian Zhang Fudan University
Litao Sun
Litao Sun Southeast University
Xixiang Zhang
Xixiang Zhang King Abdullah University of Science and Technology

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