S.E. Laux

Best Publications

• Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

  Unknown

  1479
  Citations

• Monte Carlo study of electron transport in silicon inversion layers

  Unknown

  508
  Citations

• Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure

  S.E. Laux;D.J. Frank;Frank Stern

  485
  Citations

• Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

  MeiKei Ieong;P.M. Solomon;S.E. Laux;H.-S.P. Wong

  249
  Citations

• Techniques for small-signal analysis of semiconductor devices

  Unknown

  225
  Citations

• Understanding hot-electron transport in silicon devices: Is there a shortcut?

  Unknown

  221
  Citations

• Effective barrier heights of mixed phase contacts: Size effects

  J. L. Freeouf;T. N. Jackson;S. E. Laux;J. M. Woodall

  176
  Citations

• Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability

  Unknown

  153
  Citations

• Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects

  S. E. Laux;A. Kumar;M. V. Fischetti

  148
  Citations

• Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K

  Unknown

  129
  Citations

• Size dependence of ’’effective’’ barrier heights of mixed‐phase contacts

  J. L. Freeouf;T. N. Jackson;S. E. Laux;J. M. Woodall

  129
  Citations

• On the accuracy of channel length characterization of LDD MOSFET's

  J.Y.-C. Sun;M.R. Wordeman;S.E. Laux

  103
  Citations

• A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

  A. Abramo;L. Baudry;R. Brunetti;R. Castagne

  91
  Citations

• Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain

  G. M. Cohen;M. J. Rooks;J. O. Chu;S. E. Laux

  88
  Citations

• The ballistic FET: design, capacitance and speed limit

  P.M. Solomon;S.E. Laux

  87
  Citations

• The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors

  E.F. Crabbe;J.M.C. Stork;G. Baccarani;M.V. Fischetti

  78
  Citations

• Collector signal delay in the presence of velocity overshoot

  Unknown

  78
  Citations

• Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model

  M. V. Fischetti;S. Jin;T.-W. Tang;P. Asbeck

  76
  Citations

• Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors

  Unknown

  74
  Citations

• Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET's

  Unknown

  74
  Citations