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D-Index & Metrics

Materials Science

D-Index
56
Citations
11588
World Ranking
8240
National Ranking
2032

Moses H. W. Chan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Moses H. W. Chan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 268 publications — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Moses H. W. Chan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Moses H. W. Chan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2006 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2004 - Fellow of the American Academy of Arts and Sciences
  • 1987 - Fellow of American Physical Society (APS) Citation For pioneering studies if the nature of phases and phase transitions in two and three dimensions
  • 1986 - Fellow of John Simon Guggenheim Memorial Foundation

Overview

Moses H. W. Chan is affiliated with Pennsylvania State University in the United States. Their research spans multiple areas within physics and materials science, with a strong focus on topological materials and condensed matter phenomena.

The main fields of study covered by Moses H. W. Chan include:

  • Physics and Astronomy
  • Materials Science

More specifically, their work addresses subfields such as:

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

The primary research topics of Moses H. W. Chan encompass:

  • Topological Materials and Phenomena
  • Advanced Condensed Matter Physics
  • Quantum and electron transport phenomena
  • Graphene research and applications
  • Electronic and Structural Properties of Oxides
  • Physics of Superconductivity and Magnetism
  • 2D Materials and Applications

Their recent notable publications include:

  • "Absence of evidence for chiral Majorana modes in quantum anomalous Hall-superconductor devices" (2020), published in Science
  • "Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films" (2021), published in Nano Letters
  • "Crossover from Ising- to Rashba-type superconductivity in epitaxial Bi2Se3/monolayer NbSe2 heterostructures" (2022), published in Nature Materials
  • "Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators" (2023), published in Physical Review Letters
  • "Creation of chiral interface channels for quantized transport in magnetic topological insulator multilayer heterostructures" (2023), published in Nature Communications

Moses H. W. Chan frequently collaborates with several researchers, including:

  • Cui-Zu Chang
  • Ling-Jie Zhou
  • Ruoxi Zhang
  • Yi-Fan Zhao
  • Chao-Xing Liu

Their publications often appear in high-impact venues such as:

  • arXiv (Cornell University)
  • Nano Letters
  • Nature Communications
  • Physical Review B
  • Science

Moses H. W. Chan has been recognized with several honors including:

  • Fellow of the American Association for the Advancement of Science (AAAS), 2006
  • Fellow of the American Academy of Arts and Sciences, 2004
  • Fellow of American Physical Society (APS), 1987, cited for pioneering studies of the nature of phases and phase transitions in two and three dimensions
  • Fellow of John Simon Guggenheim Memorial Foundation, 1986

Best Publications

  • High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

    Cui Zu Chang;Weiwei Zhao;Duk Y. Kim;Haijun Zhang

  • Electrochemical Growth of Single-Crystal Metal Nanowires via a Two-Dimensional Nucleation and Growth Mechanism

    Mingliang Tian;Jinguo Wang;James Kurtz;Thomas E. Mallouk

  • Correlated metals as transparent conductors

    Lei Zhang;Yuanjun Zhou;Lu Guo;Lu Guo;Weiwei Zhao

  • Disorder and the Superfluid Transition in Liquid 4He

    M. H. W. Chan;K. I. Blum;S. Q. Murphy;G. K. S. Wong

  • Realization of the Axion Insulator State in Quantum Anomalous Hall Sandwich Heterostructures.

    Di Xiao;Jue Jiang;Jae Ho Shin;Wenbo Wang

  • Evidence for electron-electron interaction in topological insulator thin films

    Jian Wang;Jian Wang;Ashley M. Dasilva;Cui Zu Chang;Cui Zu Chang;Ke He

  • Preparation, Structure, and Optical Properties of Nanoporous Gold Thin Films

    Matthew C. Dixon;Thomas A. Daniel;Mitsunori Hieda;Detlef M. Smilgies

  • Interplay between superconductivity and ferromagnetism in crystalline nanowires

    Jian Wang;Meenakshi Singh;Mingliang Tian;Nitesh Kumar;Nitesh Kumar

  • Absence of Supersolidity in Solid Helium in Porous Vycor Glass

    Duk Y. Kim;Moses H. W. Chan

  • Template-Grown Metal Nanowires

    Timothy R. Kline;Mingliang Tian;Jinguo Wang;Ayusman Sen

  • Dissipation in quasi-one-dimensional superconducting single-crystal Sn nanowires

    Mingliang Tian;Jinguo Wang;James S. Kurtz;Ying Liu

  • Freezing and melting of fluids in porous glasses.

    Eric Molz;Apollo P. Y. Wong;M. H. W. Chan;J. R. Beamish

  • Nanometer-scale modification and welding of silicon and metallic nanowires with a high-intensity electron beam.

    Shengyong Xu;Mingliang Tian;Jinguo Wang;Jian Xu

  • Penetrating the oxide barrier in situ and separating freestanding porous anodic alumina films in one step.

    Mingliang Tian;Shengyong Xu;Jinguo Wang;Nitesh Kumar

  • Liquid-vapor critical point of 4He in aerogel.

    Apollo P. Y. Wong;M. H. W. Chan

  • Superconducting proximity effect and possible evidence for Pearl vortices in a candidate topological insulator

    Duming Zhang;Jian Wang;Ashley M. DaSilva;Joon Sue Lee

  • Microtwinning in Template-Synthesized Single-Crystal Metal Nanowires

    Jinguo Wang;Mingliang Tian;Thomas E. Mallouk;Moses H. W. Chan

  • Tuning Chern Number in Quantum Anomalous Hall Insulators

    Yifan Zhao;Ruoxi Zhang;Ruobing Mei;Ling-Jie Zhou

  • Ultrasensitive quartz crystal microbalance with porous gold electrodes

    Mitsunori Hieda;Mitsunori Hieda;Rafael Garcia;Matt Dixon;Tad Daniel

  • Synthesis and characterization of superconducting single-crystal Sn nanowires

    Mingliang Tian;Jinguo Wang;Joseph Snyder;James Kurtz

  • Critical Casimir force in 4He films: confirmation of finite-size scaling.

    A Ganshin;S Scheidemantel;R Garcia;M H W Chan

  • Suppression of superconductivity in zinc nanowires by bulk superconductors.

    Mingliang Tian;Nitesh Kumar;Shengyong Xu;Jinguo Wang

Frequent Co-Authors

Nitin Samarth
Nitin Samarth Pennsylvania State University
Thomas E. Mallouk
Thomas E. Mallouk University of Pennsylvania
Jinguo Wang
Jinguo Wang The University of Texas at Dallas
Qi-Kun Xue
Qi-Kun Xue Southern University of Science and Technology
Xucun Ma
Xucun Ma Tsinghua University
Yimei Zhu
Yimei Zhu Brookhaven National Laboratory
Ke He
Ke He Tsinghua University
Lijun Wu
Lijun Wu Brookhaven National Laboratory
Zhidong Zhang
Zhidong Zhang Chinese Academy of Sciences

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