M. Gaillardin

Best Publications

• Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

  V. Ferlet-Cavrois;P. Paillet;M. Gaillardin;D. Lambert

  195
  Citations

• New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

  V. Ferlet-Cavrois;P. Paillet;D. McMorrow;N. Fel

  173
  Citations

• Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

  E. Simoen;M. Gaillardin;P. Paillet;R. A. Reed

  146
  Citations

• Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

  V. Ferlet-Cavrois;P. Paillet;D. McMorrow;A. Torres

  143
  Citations

• Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

  V.F. Cavrois;V. Pouget;D. McMorrow;J.R. Schwank

  138
  Citations

• Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

  V. Goiffon;M. Estribeau;O. Marcelot;P. Cervantes

  125
  Citations

• Total Ionizing Dose Effects on Triple-Gate FETs

  M. Gaillardin;P. Paillet;V. Ferlet-Cavrois;O. Faynot

  116
  Citations

• Combined High Dose and Temperature Radiation Effects on Multimode Silica-Based Optical Fibers

  S. Girard;C. Marcandella;A. Morana;J. Perisse

  110
  Citations

• Modeling Single Event Transients in Advanced Devices and ICs

  L. Artola;M. Gaillardin;G. Hubert;M. Raine

  105
  Citations

• Enhanced Radiation-Induced Narrow Channel Effects in Commercial ${\hbox {0.18}}~\mu$ m Bulk Technology

  M. Gaillardin;V. Goiffon;S. Girard;M. Martinez

  104
  Citations

• Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

  M Raine;G Hubert;M Gaillardin;L Artola

  104
  Citations

• Total ionizing dose effects on deca-nanometer fully depleted SOI devices

  P. Paillet;M. Gaillardin;V. Ferlet-Cavrois;A. Torres

  102
  Citations

• Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects

  R. A. Reed;R. A. Weller;A. Akkerman;J. Barak

  81
  Citations

• SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

  L Artola;G Hubert;K M Warren;M Gaillardin

  79
  Citations

• High tolerance to total ionizing dose of Ω-shaped gate field-effect transistors

  Marc Gaillardin;Philippe Paillet;Véronique Ferlet-Cavrois;Sorin Cristoloveanu

  78
  Citations

• Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

  A. Valentin;M. Raine;J.-E. Sauvestre;M. Gaillardin

  65
  Citations

• Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

  Marc Gaillardin;Martial Martinez;Philippe Paillet;Francois Andrieu

  62
  Citations

• A conventional 45nm CMOS node low-cost platform for general purpose and low power applications

  F. Boeuf;F. Arnaud;M.T. Basso;D. Sotta

  51
  Citations

• Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

  Unknown

  50
  Citations

• Performance of Ge-Doped Optical Fiber as a Thermoluminescent Dosimeter

  M. Benabdesselam;F. Mady;S. Girard;Y. Mebrouk

  46
  Citations