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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
30
Citations
5806
World Ranking
6719
National Ranking
86

Overview

L.K.J. Vandamme is affiliated with Eindhoven University of Technology in the Netherlands. Their research contributions are primarily situated within the field of engineering, with a focus on subfields including electrical and electronic engineering and biomedical engineering.

The scientist's work encompasses a range of topics centered around semiconductor devices and circuit design. Key research areas include advancements in semiconductor devices and circuit design, analog and mixed-signal circuit design, and low-power high-performance VLSI design.

  • Advancements in Semiconductor Devices and Circuit Design
  • Analog and Mixed-Signal Circuit Design
  • Low-power High-performance VLSI Design

Throughout their career, L.K.J. Vandamme has contributed to engineering with three publications, of which two focus specifically on electrical and electronic engineering and one on biomedical engineering.

Best Publications

  • EXPERIMENTAL STUDIES ON 1/F NOISE

    F N Hooge;T G M Kleinpenning;L K J Vandamme

  • General relation between refractive index and energy gap in semiconductors

    P.J.L. Herve;L.K.J. Vandamme

  • Noise as a diagnostic tool for quality and reliability of electronic devices

    L.K.J. Vandamme

  • 1/f noise in MOS devices, mobility or number fluctuations?

    L.K.J. Vandamme;Xiaosong Li;D. Rigaud

  • What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?

    L.K.J. Vandamme;F.N. Hooge

  • Critical discussion on unified 1/f noise models for MOSFETs

    E.P. Vandamme;L.K.J. Vandamme

  • 1/f noise in MODFETs at low drain bias

    J.-M. Peransin;P. Vignaud;D. Rigaud;L.K.J. Vandamme

  • Model for 1/f; noise in MOS transistors biased in the linear region

    L.K.J. Vandamme

  • Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

    S. Bychikhin;D. Pogany;L. K. J. Vandamme;G. Meneghesso

  • Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise

    A.P. van der Wel;E.A.M. Klumperink;L.K.J. Vandamme;B. Nauta

  • Electrochemical noise and impedance of Au electrode/electrolyte interfaces enabling extracellular detection of glioma cell populations

    Paulo R. F. Rocha;Paul Schlett;Ulrike Kintzel;Volker Mailänder

  • Bulk and surface 1/f noise

    L.K.J. Vandamme

  • 1/f; noise model for MOSTs biased in nonohmic region

    L.K.J. Vandamme;H.M.M. de Werd

  • Conductance noise investigations with four arbitrarily shaped and placed electrodes

    L. K. J. Vandamme;W. M. G. van Bokhoven

  • Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

    Nebojsa Nenadovic;Slobodan Mijalkovic;Lis K. Nanver;Lode K. J. Vandamme

  • Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

    N. Nenadovic;S. Mijalkovic;L.K. Nanver;L.K.J. Vandamme

  • 1/f noise as a reliability estimation for solar cells

    L.K.J. Vandamme;R. Alabedra;M. Zommiti

  • 1/f noise in pentacene and poly-thienylene vinylene thin film transistors

    L. K. J. Vandamme;R. Feyaerts;Gy. Trefán;C. Detcheverry

  • Parameter extraction and 1/f noise in a surface and a bulk-type p-channel LDD MOSFET

    Xiaosong Li;C. Barros;E.P. Vandamme;L.K.J. Vandamme

  • Impact of silicidation on the excess noise behaviour of MOS transistors

    E Vandamme;Lorenz Vandamme;Cor Claeys;Eddy Simoen

  • 1/f noise in homogeneous and inhomogeneous media

    L.K.J. Vandamme;Gy. Trefán

  • Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

    S.P.O. Bruce;L.K.J. Vandamme;A. Rydberg

  • CRITERIA OF LOW-NOISE THICK-FILM RESISTORS

    L. K. J. Vandamme

  • Correlation between most 1/f noise and CCD transfer inefficiency

    L.K.J. Vandamme;R.G.M. Penning de Vries

  • On the anomalous behavior of the relative amplitude of RTS noise

    L.K.J. Vandamme;D. Sodini;Z. Gingl

  • 1/ƒ noise in series resistance of LDD MOSTs

    Xiaosong Li;L.K.J. Vandamme

  • An explanation of 1/f noise in LDD MOSFETs from the ohmic region to saturation

    Xiaosong Li;L.K.J. Vandamme

Frequent Co-Authors

Dago M. de Leeuw
Dago M. de Leeuw Holst Centre (Netherlands)
Laszlo B. Kish
Laszlo B. Kish Texas A&M University
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Robert Vajtai
Robert Vajtai Rice University
Bram Nauta
Bram Nauta University of Twente
Lis K. Nanver
Lis K. Nanver University of Twente
Eva Olsson
Eva Olsson Chalmers University of Technology
Heinz Fissan
Heinz Fissan University of Duisburg-Essen
Enrico Zanoni
Enrico Zanoni University of Padua
Eric A.M. Klumperink
Eric A.M. Klumperink University of Twente

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