World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
30
Citations
5806
World Ranking
6718
National Ranking
86

L.K.J. Vandamme publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where L.K.J. Vandamme sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 129 publications — 9th percentile

9% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

L.K.J. Vandamme D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where L.K.J. Vandamme sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 30 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

L.K.J. Vandamme is affiliated with Eindhoven University of Technology in the Netherlands. Their research contributions are primarily situated within the field of engineering, with a focus on subfields including electrical and electronic engineering and biomedical engineering.

The scientist's work encompasses a range of topics centered around semiconductor devices and circuit design. Key research areas include advancements in semiconductor devices and circuit design, analog and mixed-signal circuit design, and low-power high-performance VLSI design.

  • Advancements in Semiconductor Devices and Circuit Design
  • Analog and Mixed-Signal Circuit Design
  • Low-power High-performance VLSI Design

Throughout their career, L.K.J. Vandamme has contributed to engineering with three publications, of which two focus specifically on electrical and electronic engineering and one on biomedical engineering.

Best Publications

  • EXPERIMENTAL STUDIES ON 1/F NOISE

    F N Hooge;T G M Kleinpenning;L K J Vandamme

  • General relation between refractive index and energy gap in semiconductors

    P.J.L. Herve;L.K.J. Vandamme

  • Noise as a diagnostic tool for quality and reliability of electronic devices

    L.K.J. Vandamme

  • 1/f noise in MOS devices, mobility or number fluctuations?

    L.K.J. Vandamme;Xiaosong Li;D. Rigaud

  • What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?

    L.K.J. Vandamme;F.N. Hooge

  • Critical discussion on unified 1/f noise models for MOSFETs

    E.P. Vandamme;L.K.J. Vandamme

  • 1/f noise in MODFETs at low drain bias

    J.-M. Peransin;P. Vignaud;D. Rigaud;L.K.J. Vandamme

  • Model for 1/f; noise in MOS transistors biased in the linear region

    L.K.J. Vandamme

  • Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

    S. Bychikhin;D. Pogany;L. K. J. Vandamme;G. Meneghesso

  • Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise

    A.P. van der Wel;E.A.M. Klumperink;L.K.J. Vandamme;B. Nauta

  • Electrochemical noise and impedance of Au electrode/electrolyte interfaces enabling extracellular detection of glioma cell populations

    Paulo R. F. Rocha;Paul Schlett;Ulrike Kintzel;Volker Mailänder

  • Bulk and surface 1/f noise

    L.K.J. Vandamme

  • 1/f; noise model for MOSTs biased in nonohmic region

    L.K.J. Vandamme;H.M.M. de Werd

  • Conductance noise investigations with four arbitrarily shaped and placed electrodes

    L. K. J. Vandamme;W. M. G. van Bokhoven

  • Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

    Nebojsa Nenadovic;Slobodan Mijalkovic;Lis K. Nanver;Lode K. J. Vandamme

  • Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

    N. Nenadovic;S. Mijalkovic;L.K. Nanver;L.K.J. Vandamme

  • 1/f noise as a reliability estimation for solar cells

    L.K.J. Vandamme;R. Alabedra;M. Zommiti

  • 1/f noise in pentacene and poly-thienylene vinylene thin film transistors

    L. K. J. Vandamme;R. Feyaerts;Gy. Trefán;C. Detcheverry

  • Parameter extraction and 1/f noise in a surface and a bulk-type p-channel LDD MOSFET

    Xiaosong Li;C. Barros;E.P. Vandamme;L.K.J. Vandamme

  • Impact of silicidation on the excess noise behaviour of MOS transistors

    E Vandamme;Lorenz Vandamme;Cor Claeys;Eddy Simoen

  • 1/f noise in homogeneous and inhomogeneous media

    L.K.J. Vandamme;Gy. Trefán

  • Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

    S.P.O. Bruce;L.K.J. Vandamme;A. Rydberg

  • CRITERIA OF LOW-NOISE THICK-FILM RESISTORS

    L. K. J. Vandamme

  • Correlation between most 1/f noise and CCD transfer inefficiency

    L.K.J. Vandamme;R.G.M. Penning de Vries

  • On the anomalous behavior of the relative amplitude of RTS noise

    L.K.J. Vandamme;D. Sodini;Z. Gingl

  • 1/ƒ noise in series resistance of LDD MOSTs

    Xiaosong Li;L.K.J. Vandamme

  • An explanation of 1/f noise in LDD MOSFETs from the ohmic region to saturation

    Xiaosong Li;L.K.J. Vandamme

Frequent Co-Authors

Dago M. de Leeuw
Dago M. de Leeuw Holst Centre (Netherlands)
Laszlo B. Kish
Laszlo B. Kish Texas A&M University
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Robert Vajtai
Robert Vajtai Rice University
Bram Nauta
Bram Nauta University of Twente
Lis K. Nanver
Lis K. Nanver University of Twente
Eva Olsson
Eva Olsson Chalmers University of Technology
Heinz Fissan
Heinz Fissan University of Duisburg-Essen
Enrico Zanoni
Enrico Zanoni University of Padua
Eric A.M. Klumperink
Eric A.M. Klumperink University of Twente

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