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Gwan Hyoung Lee

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 49 10367 10011 456 450 198 21104

Gwan Hyoung Lee publications per year

The chart shows the history of publications by Gwan Hyoung Lee between 2001 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Gwan Hyoung Lee published across 26 years, from 2001 to 2026, averaging 8.4 papers a year. Output peaked at 24 publications in 2025. 25 of the 218 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 2001 to 2026. Vertical axis: number of publications, 0 to 24. Peak 24 publications in 2025. 2001: 1 publication 2002: 0 publications 2003: 1 publication 2004: 3 publications 2005: 3 publications 2006: 3 publications 2007: 1 publication 2008: 2 publications 2009: 0 publications 2010: 1 publication 2011: 6 publications 2012: 3 publications 2013: 14 publications 2014: 7 publications 2015: 8 publications 2016: 9 publications 2017: 8 publications 2018: 12 publications 2019: 19 publications 2020: 14 publications 2021: 16 publications 2022: 22 publications 2023: 21 publications 2024: 19 publications 2025: 24 publications 2026: 1 publication
2001 2026

218 publications in total across all disciplines

View publications per year as a table
Gwan Hyoung Lee: publications per year, 2001 to 2026
Year Publications
2001 1
2002 0
2003 1
2004 3
2005 3
2006 3
2007 1
2008 2
2009 0
2010 1
2011 6
2012 3
2013 14
2014 7
2015 8
2016 9
2017 8
2018 12
2019 19
2020 14
2021 16
2022 22
2023 21
2024 19
2025 24
2026 1
Total 218
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Gwan Hyoung Lee publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gwan Hyoung Lee sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 190–209 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 198 publications — 29th percentile

29% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891 198
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Gwan Hyoung Lee D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gwan Hyoung Lee sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 48–49 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598 49
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Gwan Hyoung Lee is affiliated with Seoul National University in South Korea and focuses primarily on research within the fields of Materials Science and Engineering. Their work spans several subfields, including Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Polymers and Plastics, and Electronic, Optical and Magnetic Materials.

The main research topics addressed by this scientist include:

  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Perovskite Materials and Applications
  • Advanced Memory and Neural Computing
  • Advanced Sensor and Energy Harvesting Materials
  • Ferroelectric and Negative Capacitance Devices

Research output from Gwan Hyoung Lee has appeared frequently in prominent scientific journals. The most common publication venues are:

  • Advanced Materials
  • Small
  • Nano Letters
  • ACS Nano
  • Advanced Functional Materials

Recent scientific papers include:

  • "Artificial Neuron and Synapse Devices Based on 2D Materials" (2021), published in Small
  • "Effective Separation of CO2 Using Metal-Incorporated rGO Membranes" (2020), published in Advanced Materials
  • "Polarization-controlled PVDF-based hybrid nanogenerator for an effective vibrational energy harvesting from human foot" (2020), published in Nano Energy
  • "Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe2 Layers by Plasma-Driven Chalcogen Defect Engineering" (2020), published in ACS Applied Materials & Interfaces
  • "Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications" (2020), published in iScience

Frequent collaborators in their research include:

  • Kenji Watanabe
  • Takashi Taniguchi
  • Huije Ryu
  • Chul-Ho Lee
  • June-Chul Shin

Best Publications

  • Tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • Observation of tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • Atomically thin p–n junctions with van der Waals heterointerfaces

    Chul Ho Lee;Chul Ho Lee;Gwan Hyoung Lee;Arend M. Van Der Zande;Wenchao Chen

  • Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

    Arend M. Van Der Zande;Pinshane Y. Huang;Daniel A. Chenet;Timothy C. Berkelbach

  • Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

    Arend M. van der Zande;Pinshane Y. Huang;Daniel A. Chenet;Timothy C. Berkelbach

  • Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

    Xu Cui;Gwan-Hyoung Lee;Young Duck Kim;Ghidewon Arefe

  • Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

    Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Xu Cui;Nicholas Petrone

  • High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries

    Gwan Hyoung Lee;Gwan Hyoung Lee;Ryan C. Cooper;Sung Joo An;Sunwoo Lee

  • Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

    Min Sup Choi;Gwan Hyoung Lee;Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Dae Yeong Lee

  • Effect of defects on the intrinsic strength and stiffness of graphene

    Ardavan Zandiatashbar;Gwan Hyoung Lee;Sung Joo An;Sunwoo Lee

  • Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

    Gwan Hyoung Lee;Young Jun Yu;Changgu Lee;Cory Dean

  • Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

    Gwan Hyoung Lee;Xu Cui;Young Duck Kim;Ghidewon Arefe

  • Measurement of Lateral and Interfacial Thermal Conductivity of Single- and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique.

    Xian Zhang;Dezheng Sun;Yilei Li;Gwan Hyoung Lee

  • Graphene mechanical oscillators with tunable frequency

    Changyao Chen;Sunwoo Lee;Vikram V. Deshpande;Gwan Hyoung Lee;Gwan Hyoung Lee

  • Graphene based heterostructures

    C. Dean;A.F. Young;L. Wang;I. Meric

  • 2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

    Sojung Kang;Donghun Lee;Jonghun Kim;Andrea Capasso

  • Effect of surface morphology on friction of graphene on various substrates

    Dae Hyun Cho;Lei Wang;Jin Seon Kim;Gwan Hyoung Lee;Gwan Hyoung Lee

  • Mechanical properties of two-dimensional materials and their applications

    Jong Hun Kim;Jae Hwan Jeong;Namwon Kim;Rakesh Joshi

  • Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

    Servin Rathi;Inyeal Lee;Dongsuk Lim;Jianwei Wang

  • Artificial Neuron and Synapse Devices Based on 2D Materials

    Geonyeop Lee;Ji Hwan Baek;Fan Ren;Stephen J. Pearton

  • Thickness-dependent Schottky barrier height of MoS2 field-effect transistors.

    Junyoung Kwon;Jong Young Lee;Young Jun Yu;Chul Ho Lee

  • Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

    Jae Yoon Lee;Jun Hwan Shin;Gwan Hyoung Lee;Chul Ho Lee

  • Measurement of lateral and interfacial thermal conductivity of single- and bi-layer MoS2 and MoSe2 using refined optothermal Raman technique

    Xian Zhang;Dezheng Sun;Yilei Li;Gwan-Hyoung Lee

  • Effect of Defects on the Intrinsic Strength and Stiffness of Graphene

    Ardavan Zandiatashbar;Gwan Hyoung Lee;Hamed Parvaneh;Sung Joo An

Frequent Co-Authors

James Hone
James Hone Columbia University
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Chul Ho Lee
Chul Ho Lee Seoul National University
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Philip Kim
Philip Kim Harvard University
Tony F. Heinz
Tony F. Heinz Stanford University
Changgu Lee
Changgu Lee Ajou University
Colin Nuckolls
Colin Nuckolls Columbia University
Rakesh K. Joshi
Rakesh K. Joshi University of New South Wales
Seunghyup Yoo
Seunghyup Yoo Korea Advanced Institute of Science and Technology

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Best Scientists Citing Gwan Hyoung Lee

Kenji Watanabe

Kenji Watanabe

National Institute for Materials Science

Publications: 323

Takashi Taniguchi

Takashi Taniguchi

National Institute for Materials Science

Publications: 255

James Hone

James Hone

Columbia University

Publications: 83

Feng Wang

Feng Wang

University of California, Berkeley

Publications: 83

Lain-Jong Li

Lain-Jong Li

National University of Singapore

Publications: 77

Pulickel M. Ajayan

Pulickel M. Ajayan

Rice University

Publications: 74

Young Hee Lee

Young Hee Lee

Sungkyunkwan University

Publications: 72

Zheng Liu

Zheng Liu

Nanyang Technological University

Publications: 67

Mauricio Terrones

Mauricio Terrones

Pennsylvania State University

Publications: 59

Andres Castellanos-Gomez

Andres Castellanos-Gomez

Spanish National Research Council

Publications: 55

Sefaattin Tongay

Sefaattin Tongay

Arizona State University

Publications: 55

Jamie H. Warner

Jamie H. Warner

The University of Texas at Austin

Publications: 54

Jun He

Jun He

Nottingham Trent University

Publications: 53

Jun Lou

Jun Lou

Rice University

Publications: 52

Xiaodong Xu

Xiaodong Xu

University of Washington

Publications: 52

Wang Yao

Wang Yao

University of Hong Kong

Publications: 51

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