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Materials Science

D-Index
49
Citations
21104
World Ranking
10369
National Ranking
456

Overview

Gwan Hyoung Lee is affiliated with Seoul National University in South Korea and focuses primarily on research within the fields of Materials Science and Engineering. Their work spans several subfields, including Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Polymers and Plastics, and Electronic, Optical and Magnetic Materials.

The main research topics addressed by this scientist include:

  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Perovskite Materials and Applications
  • Advanced Memory and Neural Computing
  • Advanced Sensor and Energy Harvesting Materials
  • Ferroelectric and Negative Capacitance Devices

Research output from Gwan Hyoung Lee has appeared frequently in prominent scientific journals. The most common publication venues are:

  • Advanced Materials
  • Small
  • Nano Letters
  • ACS Nano
  • Advanced Functional Materials

Recent scientific papers include:

  • "Artificial Neuron and Synapse Devices Based on 2D Materials" (2021), published in Small
  • "Effective Separation of CO2 Using Metal-Incorporated rGO Membranes" (2020), published in Advanced Materials
  • "Polarization-controlled PVDF-based hybrid nanogenerator for an effective vibrational energy harvesting from human foot" (2020), published in Nano Energy
  • "Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe2 Layers by Plasma-Driven Chalcogen Defect Engineering" (2020), published in ACS Applied Materials & Interfaces
  • "Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications" (2020), published in iScience

Frequent collaborators in their research include:

  • Kenji Watanabe
  • Takashi Taniguchi
  • Huije Ryu
  • Chul-Ho Lee
  • June-Chul Shin

Best Publications

  • Tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • Observation of tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • Atomically thin p–n junctions with van der Waals heterointerfaces

    Chul Ho Lee;Chul Ho Lee;Gwan Hyoung Lee;Arend M. Van Der Zande;Wenchao Chen

  • Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

    Arend M. Van Der Zande;Pinshane Y. Huang;Daniel A. Chenet;Timothy C. Berkelbach

  • Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

    Arend M. van der Zande;Pinshane Y. Huang;Daniel A. Chenet;Timothy C. Berkelbach

  • Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

    Xu Cui;Gwan-Hyoung Lee;Young Duck Kim;Ghidewon Arefe

  • Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

    Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Xu Cui;Nicholas Petrone

  • High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries

    Gwan Hyoung Lee;Gwan Hyoung Lee;Ryan C. Cooper;Sung Joo An;Sunwoo Lee

  • Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

    Min Sup Choi;Gwan Hyoung Lee;Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Dae Yeong Lee

  • Effect of defects on the intrinsic strength and stiffness of graphene

    Ardavan Zandiatashbar;Gwan Hyoung Lee;Sung Joo An;Sunwoo Lee

  • Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

    Gwan Hyoung Lee;Young Jun Yu;Changgu Lee;Cory Dean

  • Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

    Gwan Hyoung Lee;Xu Cui;Young Duck Kim;Ghidewon Arefe

  • Measurement of Lateral and Interfacial Thermal Conductivity of Single- and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique.

    Xian Zhang;Dezheng Sun;Yilei Li;Gwan Hyoung Lee

  • Graphene mechanical oscillators with tunable frequency

    Changyao Chen;Sunwoo Lee;Vikram V. Deshpande;Gwan Hyoung Lee;Gwan Hyoung Lee

  • Graphene based heterostructures

    C. Dean;A.F. Young;L. Wang;I. Meric

  • 2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

    Sojung Kang;Donghun Lee;Jonghun Kim;Andrea Capasso

  • Effect of surface morphology on friction of graphene on various substrates

    Dae Hyun Cho;Lei Wang;Jin Seon Kim;Gwan Hyoung Lee;Gwan Hyoung Lee

  • Mechanical properties of two-dimensional materials and their applications

    Jong Hun Kim;Jae Hwan Jeong;Namwon Kim;Rakesh Joshi

  • Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

    Servin Rathi;Inyeal Lee;Dongsuk Lim;Jianwei Wang

  • Artificial Neuron and Synapse Devices Based on 2D Materials

    Geonyeop Lee;Ji Hwan Baek;Fan Ren;Stephen J. Pearton

  • Thickness-dependent Schottky barrier height of MoS2 field-effect transistors.

    Junyoung Kwon;Jong Young Lee;Young Jun Yu;Chul Ho Lee

  • Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

    Jae Yoon Lee;Jun Hwan Shin;Gwan Hyoung Lee;Chul Ho Lee

  • Measurement of lateral and interfacial thermal conductivity of single- and bi-layer MoS2 and MoSe2 using refined optothermal Raman technique

    Xian Zhang;Dezheng Sun;Yilei Li;Gwan-Hyoung Lee

  • Effect of Defects on the Intrinsic Strength and Stiffness of Graphene

    Ardavan Zandiatashbar;Gwan Hyoung Lee;Hamed Parvaneh;Sung Joo An

Frequent Co-Authors

James Hone
James Hone Columbia University
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Chul Ho Lee
Chul Ho Lee Seoul National University
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Philip Kim
Philip Kim Harvard University
Tony F. Heinz
Tony F. Heinz Stanford University
Changgu Lee
Changgu Lee Ajou University
Colin Nuckolls
Colin Nuckolls Columbia University
Rakesh K. Joshi
Rakesh K. Joshi University of New South Wales
Seunghyup Yoo
Seunghyup Yoo Korea Advanced Institute of Science and Technology

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