World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
7880
World Ranking
3568
National Ranking
101

Materials Science

D-Index
46
Citations
8090
World Ranking
11438
National Ranking
631

Overview

Franz Kreupl is affiliated with the Technical University of Munich in Germany, focusing on research within the field of engineering. Their primary areas of expertise include electrical and electronic engineering as well as biomedical engineering, with additional work covering atomic and molecular physics and optics, and bioengineering.

Their research contributions concentrate on advanced microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) technologies, mechanical and optical resonators, advanced sensor technologies, analytical chemistry and sensors, advanced sensor and energy harvesting materials, and gas sensing nanomaterials and sensors.

Kreupl has authored papers published in venues such as the IEEE Journal of Solid-State Circuits and IEEE Sensors Letters. Notable recent papers include:

  • A CMOS Temperature Stabilized 2-D Mechanical Stress Sensor With 11-bit Resolution, published in 2020 in the IEEE Journal of Solid-State Circuits
  • A Cost-Effective, Impediometric Na+-Sensor in Fluids, published in 2021 in IEEE Sensors Letters

Frequent co-authors in Kreupl's work include Ralf Brederlow, Umidjon Nurmetov, Tobias Fritz, Ernst Mullner, and Christopher M. Dougherty. Collaboration has often involved at least two joint publications with Ralf Brederlow, indicating sustained cooperative research engagements.

Franz Kreupl's work engages deeply with multiple technical topics, reflected in both their publications and coauthorship, advancing knowledge in sensor technology and engineering applications.

Best Publications

  • Carbon nanotubes in interconnect applications

    F. Kreupl;A. P. Graham;G. S. Duesberg;W. Steinhögl

  • Reconfigurable Silicon Nanowire Transistors

    André Heinzig;Stefan Slesazeck;Franz Kreupl;Thomas Mikolajick

  • Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

    Walter M. Weber;Lutz Geelhaar;Andrew P. Graham;Eugen Unger

  • How do carbon nanotubes fit into the semiconductor roadmap

    A.P. Graham;G.S. Duesberg;W. Hoenlein;F. Kreupl

  • Bottom electrodes for use with metal oxide resistivity switching layers

    Deepak Chandra Sekar;Franz Kreupl;Raghuveer S. Makala

  • Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Model

    Robert Seidel;Georg S. Duesberg;Eugen Unger;Andrew P. Graham

  • On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects

    N. Srivastava;Hong Li;F. Kreupl;K. Banerjee

  • High-current nanotube transistors

    Robert Seidel;Andrew P. Graham;Eugen Unger;Georg S. Duesberg

  • Electronic device and method for fabricating an electronic device

    Franz Hofmann;Franz Kreupl;Richard Johannes Luyken;Till Schloesser

  • Sub-20 nm short channel carbon nanotube transistors

    R V Seidel;A P Graham;J Kretz;B Rajasekharan

  • Electrochemical functionalization of multi-walled carbon nanotubes for solvation and purification

    Eugen Unger;Andrew Graham;Franz Kreupl;Maik Liebau

  • Carbon nanotubes for interconnect applications

    F. Kreup;A.P. Graham;M. Liebau;G.S. Duesberg

  • Carbon nanotube applications in microelectronics

    W. Hoenlein;F. Kreupl;G.S. Duesberg;A.P. Graham

  • Semiconductor electronic device, method for producing a conductive connection in a semiconductor electronic device, and method for producing a semiconductor electronic device

    Hoenlein Wolfgang;Engelhardt Manfred;Kreupl Franz

  • Carbon nanotubes for microelectronics: status and future prospects

    W. Hoenlein;F. Kreupl;G.S. Duesberg;A.P. Graham

  • Towards the integration of carbon nanotubes in microelectronics

    A.P. Graham;G.S. Duesberg;R. Seidel;M. Liebau

  • Growth of isolated carbon nanotubes with lithographically defined diameter and location

    Georg S. Duesberg;Andrew P. Graham;Maik Liebau;Robert Seidel

  • Composition Of Memory Cell With Resistance-Switching Layers

    Franz Kreupl;Abhijit Bandyopadhyay;Yung-Tin Chen;Chu-Chen Fu

  • Carbon Nanotubes for Microelectronics

    Andrew P. Graham;Georg S. Duesberg;Robert V. Seidel;Maik Liebau

  • Carbon Nanotubes for Interconnect Applications

    Franz Kreupl;Andrew P. Graham;Maik Liebau;Georg S. Duesberg

Frequent Co-Authors

Georg S. Duesberg
Georg S. Duesberg Bundeswehr University Munich
Paolo Lugli
Paolo Lugli Free University of Bozen-Bolzano
Jonathan J. Finley
Jonathan J. Finley Technical University of Munich
Agnieszka Kuc
Agnieszka Kuc Helmholtz-Zentrum Dresden-Rossendorf
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Kaustav Banerjee
Kaustav Banerjee University of California, Santa Barbara
Wolfgang Pompe
Wolfgang Pompe TU Dresden
Alan M. Cassell
Alan M. Cassell Ames Research Center
Marco Fanciulli
Marco Fanciulli University of Milano-Bicocca

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