His scientific interests lie mostly in Carbon nanotube, Nanotechnology, Transistor, Optoelectronics and Nanotube. His Carbon nanotube research incorporates elements of Wafer, Chemical vapor deposition and Integrated circuit. Franz Kreupl has researched Nanotechnology in several fields, including Field-effect transistor and Carbon nanotube field-effect transistor.
As part of one scientific family, he deals mainly with the area of Transistor, narrowing it down to issues related to the Lithography, and often Single-Walled Nanotube. The study incorporates disciplines such as Reset, Electrical conductor and Node in addition to Optoelectronics. His work deals with themes such as Carbon nanofiber and Photolithography, which intersect with Nanotube.
Franz Kreupl mainly investigates Optoelectronics, Nanotechnology, Carbon nanotube, Layer and Silicon. His Optoelectronics research is multidisciplinary, relying on both Field-effect transistor, Electrical conductor, Electrical engineering and Memory cell. His studies deal with areas such as Transistor and Chemical engineering as well as Nanotechnology.
His specific area of interest is Carbon nanotube, where he studies Nanotube. His Layer research integrates issues from Electronic engineering and Metal. He studied Silicon and Schottky barrier that intersect with Stress.
Optoelectronics, Silicon, Stress, Beryllium and Nanotechnology are his primary areas of study. His Wafer and CMOS study, which is part of a larger body of work in Optoelectronics, is frequently linked to Window, bridging the gap between disciplines. His work carried out in the field of Silicon brings together such families of science as Doping, Schottky barrier, Polymer and Microscopy.
His Schottky barrier study integrates concerns from other disciplines, such as Schottky diode and Contact resistance. His study in Nanotechnology focuses on Carbon nanotube in particular. His study looks at the intersection of Carbon nanotube and topics like Carbon nanotube computer with Electronics.
His primary areas of study are Silicon, Optoelectronics, Beryllium, Ion beam lithography and Phonon. His Silicon study combines topics in areas such as Schottky diode, Stress, Schottky barrier and Contact resistance. His study in Schottky diode is interdisciplinary in nature, drawing from both Electrical contacts, Light-emitting diode and Power semiconductor device.
Franz Kreupl studies Visible spectrum which is a part of Optoelectronics. His Ion beam lithography research includes themes of Exciton, Bohr radius, Luminescence, Semiconductor and Molecular physics. The concepts of his Transmission study are interwoven with issues in X-ray detector, Optics, X-ray optics, Silicon drift detector and Graphene.
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Carbon nanotubes in interconnect applications
F. Kreupl;A. P. Graham;G. S. Duesberg;W. Steinhögl.
Microelectronic Engineering (2002)
Reconfigurable Silicon Nanowire Transistors
André Heinzig;Stefan Slesazeck;Franz Kreupl;Thomas Mikolajick.
Nano Letters (2012)
Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts
Walter M. Weber;Lutz Geelhaar;Andrew P. Graham;Eugen Unger.
Nano Letters (2006)
How do carbon nanotubes fit into the semiconductor roadmap
A.P. Graham;G.S. Duesberg;W. Hoenlein;F. Kreupl.
Applied Physics A (2005)
Bottom electrodes for use with metal oxide resistivity switching layers
Deepak Chandra Sekar;Franz Kreupl;Raghuveer S. Makala.
(2011)
Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Model
Robert Seidel;Georg S. Duesberg;Eugen Unger;Andrew P. Graham.
Journal of Physical Chemistry B (2004)
On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects
N. Srivastava;Hong Li;F. Kreupl;K. Banerjee.
IEEE Transactions on Nanotechnology (2009)
High-current nanotube transistors
Robert Seidel;Andrew P. Graham;Eugen Unger;Georg S. Duesberg.
Nano Letters (2004)
Electronic device and method for fabricating an electronic device
Franz Hofmann;Franz Kreupl;Richard Johannes Luyken;Till Schloesser.
(2001)
Sub-20 nm short channel carbon nanotube transistors
R V Seidel;A P Graham;J Kretz;B Rajasekharan.
Nano Letters (2005)
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