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IEEE International Reliability Physics Symposium

IEEE International Reliability Physics Symposium (IRPS)

Name: Annual International Symposium on Reliability Physics
Start: 2023-03-26
End: 2023-03-30
Location: Monterey

Location: Monterey , United States

Conference dates: 3/26/2023 - 3/30/2023

Research H-index

Official website

Ranking & Metrics

Discipline name	Position	Best Scientists	Publications	D-Index
Materials Science	5	70	154	13
Electronics and Electrical Engineering	41	155	350	17
Engineering and Technology	83	24	30	6

Call for Papers

Contributed papers are solicited in the following subject areas:
Abstract submission due October 24, 2022
Circuits, Products, and Systems
 Circuit Reliability and Aging – Includes digital, mixedsignal, power and RF applications; design for reliability;
variability-aware design, EDA tools and compact modeling
 Product Reliability – Includes automotive, industrial,
commercial, military grade IC/product qualification,
HTOL/production burn-in; early failure rate; defect
detection; failure analysis; root cause and corrective
action, product reliability modeling and risk analysis; onchip sensors; silicon photonics; multichip/chiplet product,
2D/3D chiplet product, stacked and HBM memory;
DFT/DFR solutions for improved reliability; chipset
reliability considerations including electrical,
environmental, thermal and mechanical risks.
 System Electronics Reliability – Reliability of electronic
systems used in a variety of applications including but not
limited to consumer electronics, data centers, health care,
space and automotive industries; architecture, design and
modeling of system reliability including “row hammer”
scenarios, telemetry data collection and large-scale
analysis techniques such as machine and deep learning,
and neuromorphic computing.
 Radiation Effect Reliability (Soft Errors) – Includes basic
mechanism and impact analysis of radiation effects on
components and systems; Component, system and
application level modeling, simulation, testing, and
mitigation techniques for radiation effects induced
reliability issues.
 ESD and Latchup – Includes component and system-level
ESD design; modeling and simulation
 Packaging and 2.5D/3D Assembly – Includes chip-package
interaction; fatigue; power dissipation issues; reliability of
2.5D and 3D IC packaging and TSV integration,
interconnects, multichip modules, passive interposers
 Reliability Testing – Includes reliability equipment, tools,
test structures, and test methods; design for reliability
testing
 Silicon Photonics – Including reliability of integrated
silicon photonics systems
 RF/mmW/5G – Reliability of CMOS, BiCMOS, SiGe, SOI,
LDMOS, GaN, and other III-V devices in high frequency
applications
Materials, Processing, and Devices
 Transistors – Includes hot carrier phenomena; BTI; RTN;
advanced node scaling; variability; Ge and III-V channels;
nano-wire, gate all-around, nano-ribbon, fork-sheet
devices
 Gate/MOL/BEOL Dielectrics – Includes reliability of novel
gate dielectrics and ferroelectrics; 2D layered dielectrics
and van der Waals dielectrics for 2D materials based
devices; modeling of dielectric breakdown; gate dielectric
reliability for III-V, Ge, and advanced FETs; middle-of-theline reliability; MIM/MOM capacitors; low-k dielectric
breakdown
 Beyond CMOS Devices – Includes reliability of tunnel FETs,
transistors with 2D semiconductors (graphene, MoS2
);
ferroelectric and negative capacitance FETs; spintronics
 Neuromorphic Computing Reliability – Reliability of logic
and memory (MRAM, RRAM, etc) devices and design
architectures used in neuromorphic computing and AI
acceleration.
 Gallium-Nitride and Silicon-Carbide Wide-Bandgap
Semiconductors – threshold voltage instabilities, charge
trapping, switching stress, breakdown and other reliability
topics including thermal issues within power devices.
 Compound and Optoelectronic Devices – Includes
reliability of III-V-based devices; optoelectronic devices; far
infrared detectors
 Metallization/BEOL Reliability – Includes electromigration; Joule heating; stress migration;
 Process Integration – Includes mfg process such as
PID/charging, anneals/implants etc impact on component
reliability, existing and new process-related reliability
issues in production; foundry reliability challenges
 Failure Analysis – Includes evidence of new failure
mechanisms; advances in failure analysis techniques
 Memory Reliability – Includes stand-alone DRAM,
3DNAND and embedded memories
 Emerging memory – Novel memory devices based on
magnetics (e.g. STT, SOT, VCMA), or resistive (selector or
memory element) RAM, ferroelectrics, or phase change
memory
 MEMS – Includes reliability of sensors and actuators;
reliability testing; analysis & modeling; BioMEMS

Overview

This ranking presents a comprehensive list of scientific conferences in the field of Engineering and Technology, meticulously compiled by Research.com—one of the foremost online resources for scientific research data across all major disciplines. Since 2014, Research.com has provided reliable and trusted information on scientific contributions, establishing a strong reputation within the global research community.

The ranking utilizes a unique bibliometric score, exclusively developed by Research.com, to evaluate and position conferences. This score is derived using a sophisticated analysis which incorporates the estimated h-index and the number of leading scientists who have participated in each conference over the preceding three years. Through this multifaceted approach, the ranking not only reflects the impact and influence of the conferences, but also offers a transparent and robust metric for comparative evaluation.

Impact Score values included in this ranking were gathered on 2024-11-27 to ensure the most up-to-date and relevant assessment of conference performance. The process of ranking entailed an extensive examination of more than 2,262 scientific conferences, each selected based on a detailed and rigorous review. This involved a thorough analysis of over 26,934 scientific documents published during the past three years, authored by 9,385 leading and widely respected scientists within the domain of Engineering and Technology.

The depth and complexity of the analysis underlying this ranking are a testament to Research.com’s commitment to quality and accuracy. The results presented herein reflect a careful consideration of multifaceted bibliometric indicators and the concerted efforts of a team of experts dedicated to advancing the assessment of scientific progress in Engineering and Technology.

For a comprehensive overview of the processes and criteria involved in the computation of the ranking scores, please visit our Methodology Page.

Papers citation over time

A key indicator for each conference is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

Top authors and change over time

The top authors publishing at International Reliability Physics Symposium (based on the number of publications) are:

Guido Groeseneken (67 papers) published 3 papers at the last edition, 4 less than at the previous edition,
Tibor Grasser (46 papers) published 3 papers at the last edition, 3 less than at the previous edition,
Gaudenzio Meneghesso (42 papers) published 2 papers at the last edition, 3 less than at the previous edition,
V. Huard (38 papers) published 6 papers at the last edition, 1 more than at the previous edition,
Bharat L. Bhuva (36 papers) published 4 papers at the last edition, 2 more than at the previous edition.

The overall trend for top authors publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top authors.

Top affiliations and change over time

Only papers with recognized affiliations are considered

The top affiliations publishing at International Reliability Physics Symposium (based on the number of publications) are:

Katholieke Universiteit Leuven (143 papers) published 14 papers at the last edition, 8 less than at the previous edition,
IBM (132 papers) published 11 papers at the last edition, 5 more than at the previous edition,
STMicroelectronics (102 papers) published 12 papers at the last edition, 2 more than at the previous edition,
GlobalFoundries (86 papers) published 12 papers at the last edition, 2 more than at the previous edition,
TSMC (76 papers) published 8 papers at the last edition, 1 less than at the previous edition.

The overall trend for top affiliations publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions at the conference edition to all articles published within that conference. The best research institutions were selected based on the largest number of articles published during all editions of the conference.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2018 edition, 6.43% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 46.88% were posted by at least one author from the top 10 institutions publishing at the conference. Another 11.25% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 20.00% of all publications and 21.88% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of conferences they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same conference from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the conference in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing at a conference. The index includes the authors publishing at the last edition of a conference, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

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