World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
52
Citations
8630
World Ranking
3692
National Ranking
1073

Best Publications

  • Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

    F. Capasso;W. T. Tsang;A. L. Hutchinson;G. F. Williams

  • Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy.

    Jagdeep Shah;Benoit Deveaud;T. C. Damen;W. T. Tsang

  • High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers

    W. T. Tsang;N. A. Olsson;R. A. Logan

  • Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy

    Unknown

  • Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy

    Unknown

  • Subpicosecond pulses from passively mode‐locked GaAs buried optical guide semiconductor lasers

    J. P. van der Ziel;W. T. Tsang;R. A. Logan;R. M. Mikulyak

  • Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

    E.F. Schubert;J.E. Cunningham;W.T. Tsang

  • Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition

    Unknown

  • Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy

    W. T. Tsang;C. Weisbuch;R. C. Miller;R. Dingle

  • Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes

    J.C. Campbell;S. Chandrasekhar;W.T. Tsang;G.J. Qua

  • The graded bandgap multilayer avalanche photodiode: A new low-noise detector

    G.F. Williams;F. Capasso;W.T. Tsang

  • Progress in chemical beam epitaxy

    W.T. Tsang

  • The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

    W. T. Tsang;F. K. Reinhart;J. A. Ditzenberger

  • Integrated multilayer GaAs lasers separated by tunnel junctions

    J. P. van der Ziel;W. T. Tsang

  • Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices

    W.T. Tsang

  • Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes

    J.C. Campbell;B.C. Johnson;G.J. Qua;W.T. Tsang

  • Long-wavelength InGaAsP/InP distributed feedback lasers incorporating gain-coupled mechanism

    W.T. Tsang;F.S. Choa;M.C. Wu;Y.K. Chen

  • Perpendicular electronic transport in doping superlattices

    E. F. Schubert;J. E. Cunningham;W. T. Tsang

  • 1.55‐μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasers

    T. L. Koch;T. J. Bridges;E. G. Burkhardt;P. J. Corvini

  • Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

    Unknown

Frequent Co-Authors

Claude Weisbuch
Claude Weisbuch University of California, Santa Barbara

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