W. T. Tsang

Best Publications

• Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

  F. Capasso;W. T. Tsang;A. L. Hutchinson;G. F. Williams

  456
  Citations

• Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy.

  Jagdeep Shah;Benoit Deveaud;T. C. Damen;W. T. Tsang

  397
  Citations

• High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers

  W. T. Tsang;N. A. Olsson;R. A. Logan

  336
  Citations

• Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy

  Unknown

  276
  Citations

• Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy

  Unknown

  234
  Citations

• Subpicosecond pulses from passively mode‐locked GaAs buried optical guide semiconductor lasers

  J. P. van der Ziel;W. T. Tsang;R. A. Logan;R. M. Mikulyak

  160
  Citations

• Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

  E.F. Schubert;J.E. Cunningham;W.T. Tsang

  144
  Citations

• Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition

  Unknown

  134
  Citations

• Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy

  W. T. Tsang;C. Weisbuch;R. C. Miller;R. Dingle

  131
  Citations

• Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes

  J.C. Campbell;S. Chandrasekhar;W.T. Tsang;G.J. Qua

  126
  Citations

• The graded bandgap multilayer avalanche photodiode: A new low-noise detector

  G.F. Williams;F. Capasso;W.T. Tsang

  120
  Citations

• Progress in chemical beam epitaxy

  W.T. Tsang

  120
  Citations

• The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

  W. T. Tsang;F. K. Reinhart;J. A. Ditzenberger

  111
  Citations

• Integrated multilayer GaAs lasers separated by tunnel junctions

  J. P. van der Ziel;W. T. Tsang

  108
  Citations

• Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices

  W.T. Tsang

  94
  Citations

• Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes

  J.C. Campbell;B.C. Johnson;G.J. Qua;W.T. Tsang

  94
  Citations

• Long-wavelength InGaAsP/InP distributed feedback lasers incorporating gain-coupled mechanism

  W.T. Tsang;F.S. Choa;M.C. Wu;Y.K. Chen

  87
  Citations

• Perpendicular electronic transport in doping superlattices

  E. F. Schubert;J. E. Cunningham;W. T. Tsang

  85
  Citations

• 1.55‐μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasers

  T. L. Koch;T. J. Bridges;E. G. Burkhardt;P. J. Corvini

  84
  Citations

• Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

  Unknown

  82
  Citations