What is he best known for?
The fields of study he is best known for:
- Electrical engineering
- Statistics
- Integrated circuit
His primary areas of investigation include Electronic engineering, Integrated circuit design, Power grid, Integrated circuit and Voltage.
His Electronic engineering study integrates concerns from other disciplines, such as Algorithm, Electrical engineering and Noise margin.
He has included themes like Computer engineering and Chip in his Integrated circuit design study.
His Power grid research incorporates elements of Routing, Algorithm complexity, CAD, Power electronics and Range.
His study in the field of RLC circuit also crosses realms of Multigrid method.
Sani R. Nassif usually deals with CMOS and limits it to topics linked to Operating temperature and Low-power electronics.
His most cited work include:
- High-performance CMOS variability in the 65-nm regime and beyond (503 citations)
- Modeling and analysis of manufacturing variations (402 citations)
- Mixture importance sampling and its application to the analysis of SRAM designs in the presence of rare failure events (309 citations)
What are the main themes of his work throughout his whole career to date?
His scientific interests lie mostly in Electronic engineering, Integrated circuit design, Integrated circuit, Electrical engineering and Voltage.
His Electronic engineering study combines topics from a wide range of disciplines, such as Reliability, Process variation and Leakage.
His research in Integrated circuit design intersects with topics in Physical design, Chip, Circuit extraction, Very-large-scale integration and Mathematical optimization.
His Integrated circuit research includes themes of Reliability engineering, Interconnection, Process variability and Sensitivity.
His studies in Voltage integrate themes in fields like Power grid, Waveform and Logic gate.
His work on Semiconductor device modeling as part of his general CMOS study is frequently connected to Scale, thereby bridging the divide between different branches of science.
He most often published in these fields:
- Electronic engineering (56.98%)
- Integrated circuit design (24.42%)
- Integrated circuit (22.09%)
What were the highlights of his more recent work (between 2013-2019)?
- Electronic engineering (56.98%)
- Process variation (10.47%)
- Reliability (6.98%)
In recent papers he was focusing on the following fields of study:
The scientist’s investigation covers issues in Electronic engineering, Process variation, Reliability, Algorithm and Reliability engineering.
He is interested in Static random-access memory, which is a branch of Electronic engineering.
The study incorporates disciplines such as Technology CAD, Semiconductor device modeling and Noise margin in addition to Static random-access memory.
Sani R. Nassif focuses mostly in the field of Algorithm, narrowing it down to topics relating to Column and, in certain cases, Memory architecture, Reliability, Degradation and Key.
Sani R. Nassif combines subjects such as Physical design, Circuit design, Circuit extraction, Very-large-scale integration and Reliability with his study of Reliability engineering.
In the subject of general Electrical engineering, his work in Chip is often linked to Thermal, thereby combining diverse domains of study.
Between 2013 and 2019, his most popular works were:
- Variability Aware Simulation Based Design- Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization (36 citations)
- A Method for Improving Power Grid Resilience to Electromigration-Caused via Failures (26 citations)
- Resilience Articulation Point (RAP): Cross-layer dependability modeling for nanometer system-on-chip resilience (25 citations)
In his most recent research, the most cited papers focused on:
- Electrical engineering
- Statistics
- Integrated circuit
Sani R. Nassif focuses on Electronic engineering, Process variation, Static random-access memory, Data mining and Metric.
Sani R. Nassif does research in Electronic engineering, focusing on Very-large-scale integration specifically.
His Process variation study combines topics in areas such as Single event upset and Soft error.
His Static random-access memory research is multidisciplinary, incorporating perspectives in CMOS, Semiconductor device modeling, Transistor, Noise margin and Technology CAD.
His Data mining study combines topics in areas such as Sampling, Importance sampling and Failure rate.
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