The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jack M. Williams sits on this spectrum.
This scientist: 624 publications — 93rd percentile
93% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jack M. Williams sits on this spectrum.
This scientist: 79 D-Index — 79th percentile
79% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Jack M. Williams is affiliated with Argonne National Laboratory in the United States. Their research spans multiple fields, with a primary focus on Computer Science and Medicine. Within these domains, their work incorporates several subfields such as Artificial Intelligence, Molecular Biology, Endocrinology, Diabetes and Metabolism, Political Science and International Relations, and Materials Chemistry.
Their scholarly activity demonstrates engagement with a variety of topics, including:
Williams has a record of publications across diverse venues. Frequent publication outlets include:
Their recent publications illustrate the range of their research interests. Selected papers include:
Frequent co-authors with whom Williams has collaborated include:
In addition to journal articles and conference papers, Williams has contributed to the academic literature through book publications. One such example is the book published by Oxford University Press titled Blackstone's Guide to the UK Internal Market Act 2020 (2021).
Aravinda M. Kini;Urs Geiser;Hau H. Wang;K. Douglas Carlson
J.M. Williams;A.M. Kini;H.H. Wang;K.D. Carlson
Jack M. Williams;Arthur J. Schultz;Urs Geiser;K. Douglas Carlson
Jack M. Williams;Hau H. Wang;Thomas J. Emge;Urs Geiser
John R. Ferraro;Jack M. Williams
Jack M. Williams;Mark A. Beno;Hau H. Wang;Peter C. W. Leung
Jack M. Williams;John R. Ferraro
Jack M. Williams;Hau H. Wang;Mark A. Beno;Thomas J. Emge
S. M. De Soto;C. P. Slichter;A. M. Kini;H. H. Wang
Urs Geiser;Arthur J. Schults;Hsien-Hau Wang;Diana M. Watkins
Jack M. Williams;T. J. Emge;H. H. Wang;M. A. Beno
A. Carrington;A. Carrington;I. J. Bonalde;R. Prozorov;Russell W Giannetta
Urs. Geiser;Hau H. Wang;K. Douglas. Carlson;Jack M. Williams
Urs Geiser;John A. Schlueter;H. Hau Wang;Aravinda M. Kini
U. Welp;S. Fleshler;W. K. Kwok;G. W. Crabtree
Hsien-Hau Wang;K. D. Carlson;U. Geiser;W. K. Kwok
Myung Hwan Whangbo;Jack M. Williams;Peter C. W. Leung;Mark A. Beno
Hau H. Wang;Mark A. Beno;Urs Geiser;Millicent A. Firestone
H. Naramoto;C. W. White;J. M. Williams;C. J. McHargue
Myung Hwan Whangbo;Jack M. Williams;Arthur J. Schultz;Thomas J. Emge
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