The chart shows the distribution of publications by all Research.com ranked scientists in the field of Chemistry in 2026. The highlighted bar marks where Galen D. Stucky sits on this spectrum.
This scientist: 1,003 publications — 99th percentile
99% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,295 publications or more.
The chart shows the D-index (discipline H-index) distribution of Chemistry scientists ranked by Research.com in 2026. The highlighted bar marks where Galen D. Stucky sits on this spectrum.
This scientist: 174 D-Index — 100th percentile
100% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 159 D-Index or more.
Galen D. Stucky is affiliated with the University of California, Santa Barbara in the United States. Their research primarily focuses on fields including Materials Science and Engineering, with significant contributions in subfields such as Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Aerospace Engineering, and Renewable Energy, Sustainability and the Environment.
The scientist has contributed extensively to topics like electromagnetic wave absorption materials, advanced antenna and metasurface technologies, metamaterials and metasurfaces applications, electrocatalysts for energy conversion, advancements in battery materials, advanced battery materials and technologies, and MXene and MAX phase materials.
Frequent coauthors collaborating with Galen D. Stucky include Xiaojun Zeng, Ronghai Yu, Chao Zhao, Xudong Hu, and Tianli Nie. Their research is published in well-known academic journals and venues, frequently appearing in ACS Applied Materials & Interfaces, The Cambridge Structural Database, Carbon, Nano Energy, and the Journal of Advanced Ceramics.
Recent papers authored or coauthored by Galen D. Stucky are:
Awards and honors received by Galen D. Stucky include:
Dongyuan Zhao;Jianglin Feng;Qisheng Huo;Nicholas Melosh
Dongyuan Zhao;Qisheng Huo;Jianglin Feng;Bradley F. Chmelka
Peidong Yang;Dongyuan Zhao;David I. Margolese;Bradley F. Chmelka
Qisheng Huo;David I. Margolese;Ulrike Ciesla;Pingyun Feng
Q. Huo;D. I. Margolese;U. Ciesla;D. G. Demuth;D. G. Demuth
Qisheng Huo;and David I. Margolese;Galen D. Stucky
Alain Monnier;F. Schüth;F. Schüth;F. Schüth;Q. Huo;D. Kumar
Peidong Yang;Dongyuan Zhao;David I. Margolese;Bradley F. Chmelka
N. S. Sariciftci;David Braun;C. Zhang;V. I. Srdanov
A. M. Belcher;X. H. Wu;R. J. Christensen;P. K. Hansma
Dongyuan Zhao;Jinyu Sun;Quanzhi Li;Galen D. Stucky
Bettye L. Smith;Tilman E. Schäffer;Mario Viani;James B. Thompson
Syed Mubeen;Joun Lee;Nirala Singh;Stephan Krämer
Peidong Yang;Tao Deng;Dongyuan Zhao;Pingyun Feng
Kunlun Ding;Ahmet Gulec;Alexis M. Johnson;Neil M. Schweitzer
D. Margolese;J. A. Melero;S. C. Christiansen;B. F. Chmelka
Dongyuan Zhao;Peidong Yang;Nick Melosh;Jianglin Feng
Jennifer N. Cha;Katsuhiko Shimizu;Yan Zhou;Sean C. Christiansen
Qisheng Huo;Rosa Leon;Pierre M. Petroff;Galen D. Stucky
A. R. Brandt;G. A. Heath;E. A. Kort;F. O'Sullivan
A. Firouzi;D. Kumar;L. M. Bull;T. Besier
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