World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
52
Citations
12948
World Ranking
9439
National Ranking
414

Gang Hee Han publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gang Hee Han sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 105 publications — 4th percentile

4% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Gang Hee Han D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gang Hee Han sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 52 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Gang Hee Han is affiliated with Incheon National University in South Korea. Their research spans several fields, notably Engineering and Materials Science, with a focus on subfields such as Materials Chemistry, Biomedical Engineering, Electrical and Electronic Engineering, Molecular Biology, and Inorganic Chemistry.

Their main research topics include:

  • Nanoplatforms for cancer theranostics
  • Luminescence and Fluorescent Materials
  • Luminescence Properties of Advanced Materials
  • Perovskite Materials and Applications
  • Metal-Organic Frameworks: Synthesis and Applications
  • Chemical Synthesis and Characterization
  • Radioactive element chemistry and processing

Selected recent publications from Gang Hee Han include:

  • Designing Next Generation of Persistent Luminescence: Recent Advances in Uniform Persistent Luminescence Nanoparticles, 2021, Advanced Materials
  • Elucidation of the Intersystem Crossing Mechanism in a Helical BODIPY for Low-Dose Photodynamic Therapy, 2020, Angewandte Chemie International Edition
  • Nano-optogenetic engineering of CAR T cells for precision immunotherapy with enhanced safety, 2021, Nature Nanotechnology
  • Highly Effective Near-Infrared Activating Triplet-Triplet Annihilation Upconversion for Photoredox Catalysis, 2020, Journal of the American Chemical Society
  • Trap Energy Upconversion-Like Near-Infrared to Near-Infrared Light Rejuvenateable Persistent Luminescence, 2021, Advanced Materials

Frequent coauthors with whom Gang Hee Han has collaborated include:

  • Kai Huang
  • Ling Huang
  • Yang Li
  • Le Zeng
  • Zhanjun Li

The scientist regularly publishes in venues such as:

  • SSRN Electronic Journal
  • Advanced Materials
  • Angewandte Chemie International Edition
  • Separation and Purification Technology
  • Angewandte Chemie

Best Publications

  • Recent Development of Two-Dimensional Transition Metal Dichalcogenides and Their Applications

    Wonbong Choi;Nitin Choudhary;Gang Hee Han;Juhong Park

  • Synthesis of Large‐Area Graphene Layers on Poly‐Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation

    Seung Jin Chae;Fethullah Güneş;Ki Kang Kim;Eun Sung Kim

  • Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth

    Gang Hee Han;Fethullah Güneş;Jung Jun Bae;Eun Sung Kim

  • Probing graphene grain boundaries with optical microscopy

    Dinh Loc Duong;Gang Hee Han;Seung Mi Lee;Fethullah Gunes

  • van der Waals Metallic Transition Metal Dichalcogenides

    Gang Hee Han;Dinh Loc Duong;Dong Hoon Keum;Seok Joon Yun

  • Layer-by-layer doping of few-layer graphene film.

    Fethullah Güneş;Hyeon-Jin Shin;Hyeon-Jin Shin;Chandan Biswas;Gang Hee Han

  • Fano Resonance and Spectrally Modified Photoluminescence Enhancement in Monolayer MoS2 Integrated with Plasmonic Nanoantenna Array

    Bumsu Lee;Joohee Park;Gang Hee Han;Ho-Seok Ee

  • Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations

    Gang Hee Han;Nicholas J. Kybert;Carl H. Naylor;Bum Su Lee

  • Heat Dissipation of Transparent Graphene Defoggers

    Jung Jun Bae;Seong Chu Lim;Gang Hee Han;Young Woo Jo

  • Control of Electronic Structure of Graphene by Various Dopants and Their Effects on a Nanogenerator

    Hyeon-Jin Shin;Won Mook Choi;Dukhyun Choi;Gang Hee Han

  • Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers

    Min Su Kim;Seok Joon Yun;Yongjun Lee;Changwon Seo

  • Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability

    Seong Chu Lim;Jin Ho Jang;Dong Jae Bae;Gang Hee Han

  • Large Work Function Modulation of Monolayer MoS2 by Ambient Gases

    Si Young Lee;Si Young Lee;Un Jeong Kim;Un Jeong Kim;JaeGwan Chung;JaeGwan Chung;Honggi Nam;Honggi Nam

  • Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries

    Thuc Hue Ly;David J. Perello;Jiong Zhao;Qingming Deng

  • Efficient Excitonic Photoluminescence in Direct and Indirect Band Gap Monolayer MoS2

    A Steinhoff;Ji-Hee Kim;F Jahnke;M Rosner

  • Continuous Growth of Hexagonal Graphene and Boron Nitride In-Plane Heterostructures by Atmospheric Pressure Chemical Vapor Deposition

    Gang Hee Han;Julio A Rodríguez-Manzo;Chan-Woo Lee;Nicholas J Kybert

  • Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils

    Seok Joon Yun;Sang Hoon Chae;Hyun Kim;Jin Cheol Park

  • Frictional behavior of atomically thin sheets: hexagonal-shaped graphene islands grown on copper by chemical vapor deposition.

    Philip Egberts;Gang Hee Han;Xin Z. Liu;A. T. Charlie Johnson

  • Small hysteresis nanocarbon-based integrated circuits on flexible and transparent plastic substrate.

    Woo Jong Yu;Si Young Lee;Sang Hoon Chae;David Perello

  • Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain.

    Bong Gyu Shin;Gang Hee Han;Seok Joon Yun;Hye Min Oh

  • Absorption spectroscopy of surfactant-dispersed carbon nanotube film: Modulation of electronic structures

    Hong-Zhang Geng;Dae Sik Lee;Ki Kang Kim;Gang Hee Han

Frequent Co-Authors

Young Hee Lee
Young Hee Lee Sungkyunkwan University
Jae-Young Choi
Jae-Young Choi Sungkyunkwan University
Hyeon-Jin Shin
Hyeon-Jin Shin Samsung (South Korea)
Seong Chu Lim
Seong Chu Lim Sungkyunkwan University
Mun Seok Jeong
Mun Seok Jeong Hanyang University
Ki Kang Kim
Ki Kang Kim Sungkyunkwan University
Hyun You Kim
Hyun You Kim Chungnam National University
Jiong Zhao
Jiong Zhao Hong Kong Polytechnic University
Sungwoo Hwang
Sungwoo Hwang Samsung (South Korea)
Jong Min Kim
Jong Min Kim University of Cambridge

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