2026 Hyeon-Jin Shin: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	48	10700	10337	474	467	188	15645

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

10700

10337

474

467

188

15645

Overview

Hyeon-Jin Shin is affiliated with Samsung in South Korea and has contributed extensively to research in materials science and engineering. Their work primarily focuses on the development and application of advanced materials and semiconductor devices.

The scientist's research covers a variety of main topics, including:

2D Materials and Applications
Semiconductor materials and devices
Graphene research and applications
Copper Interconnects and Reliability
MXene and MAX Phase Materials
Ferroelectric and Negative Capacitance Devices
ZnO doping and properties

Their primary fields of study include Materials Science and Engineering, with a strong presence in several subfields such as:

Materials Chemistry
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Biomedical Engineering

Hyeon-Jin Shin has published research in multiple leading scientific venues. Frequent publication outlets are:

Nature
Advanced Materials
Nature Electronics
ACS Applied Nano Materials
ACS Applied Materials & Interfaces

Some recent papers include:

Promises and prospects of two-dimensional transistors, 2021, Nature
Two-dimensional materials prospects for non-volatile spintronic memories, 2022, Nature
Ultralow-dielectric-constant amorphous boron nitride, 2020, Nature
An Atomically Thin Optoelectronic Machine Vision Processor, 2020, Advanced Materials
High-Throughput Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening, 2020, Advanced Materials

The scientist frequently collaborates with other researchers, with notable co-authors including:

Yeonchoo Cho
Minsu Seol
Seongjun Park
Min-Hyun Lee
Stephan Roche

Best Publications

Efficient Reduction of Graphite Oxide by Sodium Borohydride and Its Effect on Electrical Conductance

Hyeon‐Jin Shin;Hyeon‐Jin Shin;Ki Kang Kim;Anass Benayad;Seon‐Mi Yoon

2673
Citations
Promises and prospects of two-dimensional transistors

Yuan Liu;Xidong Duan;Hyeon-Jin Shin;Seongjun Park

1220
Citations
Synthesis of Large‐Area Graphene Layers on Poly‐Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation

Seung Jin Chae;Fethullah Güneş;Ki Kang Kim;Eun Sung Kim

1063
Citations
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.

Changsik Kim;Inyong Moon;Daeyeong Lee;Min Sup Choi

936
Citations
Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronics.

Kang Hyuck Lee;Hyeon-Jin Shin;Jinyeong Lee;In-yeal Lee

654
Citations
Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth

Gang Hee Han;Fethullah Güneş;Jung Jun Bae;Eun Sung Kim

495
Citations
Transparent Flexible Graphene Triboelectric Nanogenerators

Seongsu Kim;Manoj Kumar Gupta;Keun Young Lee;Ahrum Sohn

471
Citations
Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV

Renjing Xu;Houk Jang;Min-Hyun Lee;Dovran Amanov

423
Citations
High-Performance Triboelectric Nanogenerators Based on Electrospun Polyvinylidene Fluoride–Silver Nanowire Composite Nanofibers

Siuk Cheon;Hyungseok Kang;Han Kim;Youngin Son

413
Citations
Layer-by-layer doping of few-layer graphene film.

Fethullah Güneş;Hyeon-Jin Shin;Hyeon-Jin Shin;Chandan Biswas;Gang Hee Han

376
Citations
Fully Rollable Transparent Nanogenerators Based on Graphene Electrodes

Dukhyun Choi;Min-Yeol Choi;Won Mook Choi;Hyeon-Jin Shin

348
Citations
Triboelectric Series of 2D Layered Materials.

Minsu Seol;Seongsu Kim;Yeonchoo Cho;Kyung-Eun Byun

324
Citations
Fermi Level Engineering of Single-Walled Carbon Nanotubes by AuCl3 Doping

Ki Kang Kim;Jung Jun Bae;Hyeon Ki Park;Soo Min Kim

307
Citations
Ultralow-dielectric-constant amorphous boron nitride

Seokmo Hong;Chang Seok Lee;Min Hyun Lee;Yeongdong Lee

305
Citations
Control of Electronic Structure of Graphene by Various Dopants and Their Effects on a Nanogenerator

Hyeon-Jin Shin;Won Mook Choi;Dukhyun Choi;Gang Hee Han

291
Citations
Reduction-controlled viologen in bisolvent as an environmentally stable n-type dopant for carbon nanotubes.

Soo Min Kim;Jin Ho Jang;Ki Kang Kim;Hyeon Ki Park

244
Citations
Tailoring Electronic Structures of Carbon Nanotubes by Solvent with Electron-Donating and -Withdrawing Groups

Hyeon-Jin Shin;Soo Min Kim;Seon-Mi Yoon;Anass Benayad

220
Citations
Graphene sheet and process of preparing the same

Jae-Young Choi;Hyeon-jin Shin;Seon-mi Yoon

211
Citations
Synthesis of multilayer graphene balls by carbon segregation from nickel nanoparticles

Seon-Mi Yoon;Won Mook Choi;Hionsuck Baik;Hyeon-Jin Shin

192
Citations
Refractive index engineering of transparent ZrO2–polydimethylsiloxane nanocomposites

Sangkyu Lee;Hyeon Jin Shin;Seon Mi Yoon;Dong Kee Yi

192
Citations