World's Best Scientists 2026 revealed!
Weiguang Xie

Weiguang Xie

D-Index & Metrics

Materials Science

D-Index
47
Citations
6584
World Ranking
11258
National Ranking
3124

Weiguang Xie publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Weiguang Xie sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 160 publications — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Weiguang Xie D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Weiguang Xie sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 47 D-Index — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Weiguang Xie is affiliated with Jinan University in China and conducts research primarily in the fields of Engineering and Materials Science. Their work spans several subfields including Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Electronic, Optical and Magnetic Materials, and Renewable Energy, Sustainability and the Environment.

The scientist's research covers a variety of topics, notably:

  • Perovskite Materials and Applications
  • 2D Materials and Applications
  • Transition Metal Oxide Nanomaterials
  • Conducting Polymers and Applications
  • Gas Sensing Nanomaterials and Sensors
  • Advanced Memory and Neural Computing
  • Quantum Dots Synthesis And Properties

Xie has contributed to numerous publications, with frequent appearances in the following venues:

  • ACS Applied Materials & Interfaces
  • Advanced Materials
  • CrystEngComm
  • Applied Physics Letters
  • SSRN Electronic Journal

Recent papers authored by Xie include:

  • "Ion Migration Accelerated Reaction between Oxygen and Metal Halide Perovskites in Light and Its Suppression by Cesium Incorporation," 2021, Advanced Energy Materials
  • "Plasma Oxidized Ti3C2Tx MXene as Electron Transport Layer for Efficient Perovskite Solar Cells," 2021, ACS Applied Materials & Interfaces
  • "Photoinduced Multi-Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D-Perovskite Floating Gate," 2022, Advanced Materials
  • "Research progress on the preparation methods for VO2 nanoparticles and their application in smart windows," 2020, CrystEngComm
  • "Polycrystalline Few-Layer Graphene as a Durable Anticorrosion Film for Copper," 2021, Nano Letters

Collaboration is a significant part of Xie's research activities. Frequent coauthors include:

  • Pengyi Liu
  • Tingting Shi
  • Haojie Lai
  • Yujia Gao
  • Dongxu Lin

Best Publications

  • Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy

    Kun Chen;Xi Wan;Jinxiu Wen;Weiguang Xie

  • 1T′ Transition Metal Telluride Atomic Layers for Plasmon-Free SERS at Femtomolar Levels

    Li Tao;Kun Chen;Zefeng Chen;Chunxiao Cong

  • Highly Confined and Tunable Hyperbolic Phonon Polaritons in Van Der Waals Semiconducting Transition Metal Oxides

    Zebo Zheng;Jianing Chen;Yu Wang;Ximiao Wang

  • Lateral Built-In Potential of Monolayer MoS2–WS2 In-Plane Heterostructures by a Shortcut Growth Strategy

    Kun Chen;Xi Wan;Weiguang Xie;Jinxiu Wen

  • A Robust Solid Electrolyte Interphase Layer Augments the Ion Storage Capacity of Bimetallic-Sulfide-Containing Potassium-Ion Batteries.

    Junpeng Xie;Xiaodan Li;Haojie Lai;Zhijuan Zhao

  • Stable and Efficient 3D-2D Perovskite-Perovskite Planar Heterojunction Solar Cell without Organic Hole Transport Layer

    Tiankai Zhang;Mingzhu Long;Minchao Qin;Xinhui Lu

  • Electrochromic Asymmetric Supercapacitor Windows Enable Direct Determination of Energy Status by the Naked Eye.

    Ying Zhong;Zhisheng Chai;Zhimin Liang;Peng Sun

  • High-Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self-Assembled Monolayers

    Xiaomu Wang;Jian-Bin Xu;Jian-Bin Xu;Chengliang Wang;Jun Du

  • A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties.

    Kun Chen;Zefeng Chen;Xi Wan;Zebo Zheng

  • Quantitative Analysis of Graphene Doping by Organic Molecular Charge Transfer

    Xiaomu Wang;Jian-Bin Xu;Weiguang Xie;Jun Du

  • Freestanding CNT–WO3 hybrid electrodes for flexible asymmetric supercapacitors

    Peng Sun;Zewei Deng;Peihua Yang;Xiang Yu

  • Quantitative Analysis of Charge Storage Process of Tungsten Oxide that Combines Pseudocapacitive and Electrochromic Properties

    Peihua Yang;Peng Sun;Lianhuan Du;Zhimin Liang

  • Graphene based non-volatile memory devices.

    Xiaomu Wang;Weiguang Xie;Jian-Bin Xu

  • Ion Migration Accelerated Reaction between Oxygen and Metal Halide Perovskites in Light and Its Suppression by Cesium Incorporation

    Dongxu Lin;Tingting Shi;Haipeng Xie;Fang Wan

  • Stable and scalable 3D-2D planar heterojunction perovskite solar cells via vapor deposition

    Dongxu Lin;Tiankai Zhang;Jiming Wang;Mingzhu Long

  • Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Rihui Yao;Zeke Zheng;Mei Xiong;Xiaochen Zhang

  • Surface characterization on graphitization of nanodiamond powder annealed in nitrogen ambient

    F. Y. Xie;W. G. Xie;L. Gong;W. H. Zhang

  • Photoinduced Multi‐Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D‐Perovskite Floating Gate

    Unknown

  • Self-Powered, High-Speed and Visible–Near Infrared Response of MoO3–x/n-Si Heterojunction Photodetector with Enhanced Performance by Interfacial Engineering

    Chuanxi Zhao;Zhimin Liang;Mingze Su;Pengyi Liu

  • The distinctive phase stability and defect physics in CsPbI2Br perovskite

    Yuxuan Chen;Tingting Shi;Pengyi Liu;Weiguang Xie

  • All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process

    Zeke Zheng;Yong Zeng;Rihui Yao;Zhiqiang Fang

  • Crystallinity Preservation and Ion Migration Suppression through Dual Ion Exchange Strategy for Stable Mixed Perovskite Solar Cells

    Tiankai Zhang;Mingzhu Long;Keyou Yan;Minchao Qin

Frequent Co-Authors

Jianbin Xu
Jianbin Xu Chinese University of Hong Kong
Fangyan Xie
Fangyan Xie Sun Yat-sen University
Wenjie Mai
Wenjie Mai Jinan University
Xiaomu Wang
Xiaomu Wang Nanjing University
Huanjun Chen
Huanjun Chen Sun Yat-sen University
Ningsheng Xu
Ningsheng Xu Fudan University
Shaozhi Deng
Shaozhi Deng Sun Yat-sen University
Jun Chen
Jun Chen Sun Yat-sen University
Ni Zhao
Ni Zhao Chinese University of Hong Kong
Keyou Yan
Keyou Yan Chinese University of Hong Kong

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