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Weiguang Xie

Weiguang Xie

D-Index & Metrics

Materials Science

D-Index
47
Citations
6584
World Ranking
11260
National Ranking
3123

Overview

Weiguang Xie is affiliated with Jinan University in China and conducts research primarily in the fields of Engineering and Materials Science. Their work spans several subfields including Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Electronic, Optical and Magnetic Materials, and Renewable Energy, Sustainability and the Environment.

The scientist's research covers a variety of topics, notably:

  • Perovskite Materials and Applications
  • 2D Materials and Applications
  • Transition Metal Oxide Nanomaterials
  • Conducting Polymers and Applications
  • Gas Sensing Nanomaterials and Sensors
  • Advanced Memory and Neural Computing
  • Quantum Dots Synthesis And Properties

Xie has contributed to numerous publications, with frequent appearances in the following venues:

  • ACS Applied Materials & Interfaces
  • Advanced Materials
  • CrystEngComm
  • Applied Physics Letters
  • SSRN Electronic Journal

Recent papers authored by Xie include:

  • "Ion Migration Accelerated Reaction between Oxygen and Metal Halide Perovskites in Light and Its Suppression by Cesium Incorporation," 2021, Advanced Energy Materials
  • "Plasma Oxidized Ti3C2Tx MXene as Electron Transport Layer for Efficient Perovskite Solar Cells," 2021, ACS Applied Materials & Interfaces
  • "Photoinduced Multi-Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D-Perovskite Floating Gate," 2022, Advanced Materials
  • "Research progress on the preparation methods for VO2 nanoparticles and their application in smart windows," 2020, CrystEngComm
  • "Polycrystalline Few-Layer Graphene as a Durable Anticorrosion Film for Copper," 2021, Nano Letters

Collaboration is a significant part of Xie's research activities. Frequent coauthors include:

  • Pengyi Liu
  • Tingting Shi
  • Haojie Lai
  • Yujia Gao
  • Dongxu Lin

Best Publications

  • Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy

    Kun Chen;Xi Wan;Jinxiu Wen;Weiguang Xie

  • 1T′ Transition Metal Telluride Atomic Layers for Plasmon-Free SERS at Femtomolar Levels

    Li Tao;Kun Chen;Zefeng Chen;Chunxiao Cong

  • Highly Confined and Tunable Hyperbolic Phonon Polaritons in Van Der Waals Semiconducting Transition Metal Oxides

    Zebo Zheng;Jianing Chen;Yu Wang;Ximiao Wang

  • Lateral Built-In Potential of Monolayer MoS2–WS2 In-Plane Heterostructures by a Shortcut Growth Strategy

    Kun Chen;Xi Wan;Weiguang Xie;Jinxiu Wen

  • A Robust Solid Electrolyte Interphase Layer Augments the Ion Storage Capacity of Bimetallic-Sulfide-Containing Potassium-Ion Batteries.

    Junpeng Xie;Xiaodan Li;Haojie Lai;Zhijuan Zhao

  • Stable and Efficient 3D-2D Perovskite-Perovskite Planar Heterojunction Solar Cell without Organic Hole Transport Layer

    Tiankai Zhang;Mingzhu Long;Minchao Qin;Xinhui Lu

  • Electrochromic Asymmetric Supercapacitor Windows Enable Direct Determination of Energy Status by the Naked Eye.

    Ying Zhong;Zhisheng Chai;Zhimin Liang;Peng Sun

  • High-Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self-Assembled Monolayers

    Xiaomu Wang;Jian-Bin Xu;Jian-Bin Xu;Chengliang Wang;Jun Du

  • A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties.

    Kun Chen;Zefeng Chen;Xi Wan;Zebo Zheng

  • Quantitative Analysis of Graphene Doping by Organic Molecular Charge Transfer

    Xiaomu Wang;Jian-Bin Xu;Weiguang Xie;Jun Du

  • Freestanding CNT–WO3 hybrid electrodes for flexible asymmetric supercapacitors

    Peng Sun;Zewei Deng;Peihua Yang;Xiang Yu

  • Quantitative Analysis of Charge Storage Process of Tungsten Oxide that Combines Pseudocapacitive and Electrochromic Properties

    Peihua Yang;Peng Sun;Lianhuan Du;Zhimin Liang

  • Graphene based non-volatile memory devices.

    Xiaomu Wang;Weiguang Xie;Jian-Bin Xu

  • Ion Migration Accelerated Reaction between Oxygen and Metal Halide Perovskites in Light and Its Suppression by Cesium Incorporation

    Dongxu Lin;Tingting Shi;Haipeng Xie;Fang Wan

  • Stable and scalable 3D-2D planar heterojunction perovskite solar cells via vapor deposition

    Dongxu Lin;Tiankai Zhang;Jiming Wang;Mingzhu Long

  • Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Rihui Yao;Zeke Zheng;Mei Xiong;Xiaochen Zhang

  • Surface characterization on graphitization of nanodiamond powder annealed in nitrogen ambient

    F. Y. Xie;W. G. Xie;L. Gong;W. H. Zhang

  • Photoinduced Multi‐Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D‐Perovskite Floating Gate

    Unknown

  • Self-Powered, High-Speed and Visible–Near Infrared Response of MoO3–x/n-Si Heterojunction Photodetector with Enhanced Performance by Interfacial Engineering

    Chuanxi Zhao;Zhimin Liang;Mingze Su;Pengyi Liu

  • The distinctive phase stability and defect physics in CsPbI2Br perovskite

    Yuxuan Chen;Tingting Shi;Pengyi Liu;Weiguang Xie

  • All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process

    Zeke Zheng;Yong Zeng;Rihui Yao;Zhiqiang Fang

  • Crystallinity Preservation and Ion Migration Suppression through Dual Ion Exchange Strategy for Stable Mixed Perovskite Solar Cells

    Tiankai Zhang;Mingzhu Long;Keyou Yan;Minchao Qin

Frequent Co-Authors

Jianbin Xu
Jianbin Xu Chinese University of Hong Kong
Fangyan Xie
Fangyan Xie Sun Yat-sen University
Wenjie Mai
Wenjie Mai Jinan University
Xiaomu Wang
Xiaomu Wang Nanjing University
Huanjun Chen
Huanjun Chen Sun Yat-sen University
Ningsheng Xu
Ningsheng Xu Fudan University
Shaozhi Deng
Shaozhi Deng Sun Yat-sen University
Jun Chen
Jun Chen Sun Yat-sen University
Ni Zhao
Ni Zhao Chinese University of Hong Kong
Keyou Yan
Keyou Yan Chinese University of Hong Kong

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