World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
32
Citations
3490
World Ranking
9607
National Ranking
2728

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Integrated circuit
  • Voltage

His primary scientific interests are in Voltage, Electrical engineering, Flash memory, Computer hardware and Memory cell. His research integrates issues of Electronic engineering and Chip in his study of Voltage. In general Electrical engineering study, his work on High voltage, Field-effect transistor, Multiple-emitter transistor and Darlington transistor often relates to the realm of Regulator, thereby connecting several areas of interest.

Peter Wung Lee incorporates Flash memory and Erasure in his research. His studies in Sense amplifier, Semiconductor memory and Non-volatile memory are all subfields of Computer hardware research. In his study, NAND gate is inextricably linked to Embedded system, which falls within the broad field of Non-volatile memory.

His most cited work include:

  • Novel monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout (157 citations)
  • Dram-like nvm memory array and sense amplifier design for high temperature and high endurance operation (135 citations)
  • Bit-refreshable method and circuit for refreshing a nonvolatile flash memory (93 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Flash memory, Computer hardware, Electrical engineering, Voltage and Flash. His work carried out in the field of Flash memory brings together such families of science as Electronic circuit, Electronic engineering and Signal. His Computer hardware study deals with NAND gate intersecting with Embedded system and Racetrack memory.

His work on Transistor, Threshold voltage, Capacitor and Breakdown voltage as part of general Electrical engineering study is frequently linked to Charge, bridging the gap between disciplines. His biological study spans a wide range of topics, including Chip and Line. Peter Wung Lee incorporates Flash and Byte in his studies.

He most often published in these fields:

  • Flash memory (50.00%)
  • Computer hardware (45.00%)
  • Electrical engineering (43.00%)

What were the highlights of his more recent work (between 2010-2013)?

  • Computer hardware (45.00%)
  • Flash (32.00%)
  • EEPROM (23.00%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Computer hardware, Flash, EEPROM, NAND gate and Non-volatile memory. Peter Wung Lee works mostly in the field of Computer hardware, limiting it down to topics relating to Embedded system and, in certain cases, Computer memory. His EEPROM research is multidisciplinary, relying on both High voltage and Voltage.

His NAND gate study incorporates themes from Electronic engineering and Flash memory. He combines subjects such as Optoelectronics, Node and Semiconductor memory with his study of Flash memory. His Transistor research is classified as research in Electrical engineering.

Between 2010 and 2013, his most popular works were:

  • Dram-like nvm memory array and sense amplifier design for high temperature and high endurance operation (135 citations)
  • Non-boosting program inhibit scheme in NAND design (29 citations)
  • Universal timing waveforms sets to improve random access read and write speed of memories (18 citations)

In his most recent research, the most cited papers focused on:

  • Transistor
  • Integrated circuit
  • Voltage

Peter Wung Lee mostly deals with Computer hardware, EEPROM, NAND gate, Voltage and Flash. Peter Wung Lee frequently studies issues relating to Threshold voltage and Computer hardware. His studies deal with areas such as Dram and Power consumption as well as Threshold voltage.

With his scientific publications, his incorporates both EEPROM and Reduction. His work deals with themes such as Low voltage, NMOS logic, PMOS logic, Buffer and Embedded system, which intersect with NAND gate. Voltage is the subject of his research, which falls under Electrical engineering.

Best Publications

  • Novel monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout

    Peter W. Lee;Fu-Chang Hsu;Hsing-Ya Tsao;Han-Rei Ma

  • Dram-like nvm memory array and sense amplifier design for high temperature and high endurance operation

    Peter Wung Lee;Fu-Chang Hsu

  • Flash memory address decoder with novel latch

    Peter W. Lee;Hsing-Ya Tsao;Fu-Chang Hsu

  • Set of three level concurrent word line bias conditions for a NOR type flash memory array

    Peter W. Lee;Hsing-Ya Tsao;Fu-Chang Hsu;Mervyn Wong

  • Node-precise voltage regulation for a MOS memory system

    Peter W. Lee;Hsing-Ya Tsao;Fu-Chang Hsu

  • Flash memory wordline decoder with overerase repair

    Peter W. Lee;Hsing-Ya Tsao;Fu-Chang Hsu

  • Charge pump circuits

    Fu-Chang Hsu;Hsing-Ya Tsao;Peter Wung Lee

  • Parallel channel programming scheme for MLC flash memory

    Fu-Chang Hsu;Peter W. Lee;Hsing-Ya Tsao

  • Flash memory array having maximum and minimum threshold voltage detection for eliminating over-erasure problem and enhancing write operation

    Peter Wung Lee;Hsing-Ya Tsao;Fu-Chang Hsu;Wen-Tan Fan

  • OR-plane memory cell array for flash memory with bit-based write capability, and methods for programming and erasing the memory cell array

    Peter W. Lee;Hsing-Ya Tsao;Fu-Chang Hsu

  • Integrated SRAM and FLOTOX EEPROM memory device

    Fu-Chang Hsu;Peter Wung Lee

  • Positive/negative high voltage charge pump system

    Peter W. Lee;Hsing-Ya Tsao;Fu-Chang Hsu

  • Memory device with on-chip manufacturing and memory cell defect detection capability

    Peter W. Lee;Hsing-Ya Tsao;Fu-Chang Hsu

  • Novel NAND-based hybrid NVM design that integrates NAND and NOR in 1-die with serial interface

    Peter W. Lee;Fu-Chang Hsu;Kesheng Wang

  • NAND based NMOS NOR flash memory cell, a NAND based NMOS NOR flash memory array, and a method of forming a NAND based NMOS NOR flash memory array

    Peter Wung Lee;Fu-Chang Hsu;Hsing-Ya Tsao

  • Flash memory protection attribute status bits held in a flash memory array

    Peter Wung Lee;Fu-Chang Hsu;Hsing-Ya Tsao

  • Memory system having nand-based nor and nand flashes and sram integrated in one chip for hybrid data, code and cache storage

    Peter Wung Lee;Fu-Chang Hsu;Kesheng Wang

  • Highly-integrated flash memory and mask ROM array architecture

    Peter W. Lee;Fu-Chang Hsu

  • Reversed split-gate cell array

    Peter Wung Lee;Fu-Chang Hsu;Hsing-Ya Tsao

  • Bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell NAND flash array

    Peter Wung Lee;Fu-Chang Hsu

  • NAND string based NAND/NOR flash memory cell, array, and memory device having parallel bit lines and source lines, having a programmable select gating transistor, and circuits and methods for operating same

    Peter Wung Lee;Fu-Chang Hsu

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Best Scientists Citing Peter Wung Lee