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Materials Science

D-Index
40
Citations
5802
World Ranking
12831
National Ranking
3453

Overview

Fei Zhuge is affiliated with the Ningbo Institute of Industrial Technology in China and has a research focus primarily situated at the intersection of engineering and neuroscience. Their work spans numerous subfields including electrical and electronic engineering, cellular and molecular neuroscience, artificial intelligence, polymers and plastics, and materials chemistry.

The scientist's research topics concentrate on advanced memory and neural computing, photoreceptor and optogenetics research, neural networks and reservoir computing, neuroscience and neural engineering, transition metal oxide nanomaterials, ferroelectric and negative capacitance devices, as well as neural dynamics and brain function.

Fei Zhuge's publication record includes contributions to several notable academic venues. Frequent publication venues comprise:

  • Advanced Functional Materials
  • Journal of Semiconductors
  • arXiv (Cornell University)
  • Journal of Inorganic Materials
  • Fundamental Research

Their recent papers cover a range of topics related to optoelectronic neuromorphic computing and artificial synaptic devices. Some of the significant papers include:

  • All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing (2020, Advanced Functional Materials)
  • All-Optically Controlled Artificial Synapse Based on Full Oxides for Low-Power Visible Neural Network Computing (2023, Advanced Functional Materials)
  • Optically driven intelligent computing with ZnO memristor (2022, Fundamental Research)
  • A Reconfigurable All-Optical-Controlled Synaptic Device for Neuromorphic Computing Applications (2024, ACS Nano)
  • Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations (2022, ACS Applied Materials & Interfaces)

Fei Zhuge collaborates frequently with other researchers. Their frequent coauthors include Lingxiang Hu, Zhizhen Ye, Jingrui Wang, Peihong Cheng, and Jianguo Lü, indicating a collaborative network chiefly oriented around their specialized research areas.

Best Publications

  • All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing

    Lingxiang Hu;Jing Yang;Jingrui Wang;Peihong Cheng

  • p-type conduction in N–Al co-doped ZnO thin films

    J. G. Lu;Z. Z. Ye;F. Zhuge;Y. J. Zeng

  • Nonvolatile resistive switching in graphene oxide thin films

    C. L. He;F. Zhuge;X. F. Zhou;M. Li

  • Resistance switching in polycrystalline BiFeO3 thin films

    Kuibo Yin;Mi Li;Yiwei Liu;Congli He

  • Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors.

    Bin Chen;Mi Li;Yiwei Liu;Zhenghu Zuo

  • Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films.

    Lingxiang Hu;Lingxiang Hu;Sheng Fu;Youhu Chen;Hongtao Cao

  • Nonvolatile resistive switching memory based on amorphous carbon

    F. Zhuge;W. Dai;C. L. He;A. Y. Wang

  • Mechanism of nonvolatile resistive switching in graphene oxide thin films

    Fei Zhuge;Benlin Hu;Congli He;Xufeng Zhou

  • Mechanism for resistive switching in an oxide-based electrochemical metallization memory

    Shanshan Peng;Fei Zhuge;Xinxin Chen;Xiaojian Zhu

  • Structural, Chemical, Optical, and Electrical Evolution of SnOx Films Deposited by Reactive rf Magnetron Sputtering

    Hao Luo;Ling Yan Liang;Hong Tao Cao;Zhi Min Liu

  • ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO

    F. Zhuge;L. P. Zhu;Z. Z. Ye;D. W. Ma

  • Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

    J.J. Yu;L.Y. Liang;L.X. Hu;H.X. Duan

  • Strain and its effect on optical properties of Al-N codoped ZnO films

    H. P. He;F. Zhuge;Z. Z. Ye;L. P. Zhu

  • Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments.

    Fei Zhuge;Fei Zhuge;Shanshan Peng;Congli He;Xiaojian Zhu

  • Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches.

    Mi Li;Fei Zhuge;Xiaojian Zhu;Kuibo Yin

  • High-temperature tolerance in WTi-Al2O3 cermet-based solar selective absorbing coatings with low thermal emissivity

    Xiaoyu Wang;Junhua Gao;Haibo Hu;Hongliang Zhang

  • Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

    Ling Yan Liang;Hong Tao Cao;Xiao Bo Chen;Zhi Min Liu

  • Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing

    D. S. Shang;L. Shi;J. R. Sun;B. G. Shen

  • ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers

    Z. Z. Ye;J. G. Lu;Y. Z. Zhang;Y. J. Zeng

  • Synaptic devices based on purely electronic memristors

    Ruobing Pan;Ruobing Pan;Jun Li;Fei Zhuge;Liqiang Zhu

  • All-Optically Controlled Memristor

    Lingxiang Hu;Jing Yang;Jingrui Wang;Peihong Cheng

Frequent Co-Authors

Liping Zhu
Liping Zhu Zhejiang University
Run-Wei Li
Run-Wei Li Chinese Academy of Sciences
Jianguo Lu
Jianguo Lu Zhejiang University
Binghui Zhao
Binghui Zhao Zhejiang University
Zhizhen Ye
Zhizhen Ye Zhejiang University
Haiping He
Haiping He Zhejiang University
Yu-Jia Zeng
Yu-Jia Zeng Shenzhen University
Jingyun Huang
Jingyun Huang Zhejiang University
Bin Chen
Bin Chen Chinese Academy of Sciences
Zhimin Liu
Zhimin Liu Chinese Academy of Sciences

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