World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
40
Citations
5802
World Ranking
12827
National Ranking
3454

Fei Zhuge publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Fei Zhuge sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 95 publications — 2nd percentile

2% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Fei Zhuge D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Fei Zhuge sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 40 D-Index — 1st percentile

1% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Fei Zhuge is affiliated with the Ningbo Institute of Industrial Technology in China and has a research focus primarily situated at the intersection of engineering and neuroscience. Their work spans numerous subfields including electrical and electronic engineering, cellular and molecular neuroscience, artificial intelligence, polymers and plastics, and materials chemistry.

The scientist's research topics concentrate on advanced memory and neural computing, photoreceptor and optogenetics research, neural networks and reservoir computing, neuroscience and neural engineering, transition metal oxide nanomaterials, ferroelectric and negative capacitance devices, as well as neural dynamics and brain function.

Fei Zhuge's publication record includes contributions to several notable academic venues. Frequent publication venues comprise:

  • Advanced Functional Materials
  • Journal of Semiconductors
  • arXiv (Cornell University)
  • Journal of Inorganic Materials
  • Fundamental Research

Their recent papers cover a range of topics related to optoelectronic neuromorphic computing and artificial synaptic devices. Some of the significant papers include:

  • All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing (2020, Advanced Functional Materials)
  • All-Optically Controlled Artificial Synapse Based on Full Oxides for Low-Power Visible Neural Network Computing (2023, Advanced Functional Materials)
  • Optically driven intelligent computing with ZnO memristor (2022, Fundamental Research)
  • A Reconfigurable All-Optical-Controlled Synaptic Device for Neuromorphic Computing Applications (2024, ACS Nano)
  • Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations (2022, ACS Applied Materials & Interfaces)

Fei Zhuge collaborates frequently with other researchers. Their frequent coauthors include Lingxiang Hu, Zhizhen Ye, Jingrui Wang, Peihong Cheng, and Jianguo Lü, indicating a collaborative network chiefly oriented around their specialized research areas.

Best Publications

  • All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing

    Lingxiang Hu;Jing Yang;Jingrui Wang;Peihong Cheng

  • p-type conduction in N–Al co-doped ZnO thin films

    J. G. Lu;Z. Z. Ye;F. Zhuge;Y. J. Zeng

  • Nonvolatile resistive switching in graphene oxide thin films

    C. L. He;F. Zhuge;X. F. Zhou;M. Li

  • Resistance switching in polycrystalline BiFeO3 thin films

    Kuibo Yin;Mi Li;Yiwei Liu;Congli He

  • Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors.

    Bin Chen;Mi Li;Yiwei Liu;Zhenghu Zuo

  • Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films.

    Lingxiang Hu;Lingxiang Hu;Sheng Fu;Youhu Chen;Hongtao Cao

  • Nonvolatile resistive switching memory based on amorphous carbon

    F. Zhuge;W. Dai;C. L. He;A. Y. Wang

  • Mechanism of nonvolatile resistive switching in graphene oxide thin films

    Fei Zhuge;Benlin Hu;Congli He;Xufeng Zhou

  • Mechanism for resistive switching in an oxide-based electrochemical metallization memory

    Shanshan Peng;Fei Zhuge;Xinxin Chen;Xiaojian Zhu

  • Structural, Chemical, Optical, and Electrical Evolution of SnOx Films Deposited by Reactive rf Magnetron Sputtering

    Hao Luo;Ling Yan Liang;Hong Tao Cao;Zhi Min Liu

  • ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO

    F. Zhuge;L. P. Zhu;Z. Z. Ye;D. W. Ma

  • Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

    J.J. Yu;L.Y. Liang;L.X. Hu;H.X. Duan

  • Strain and its effect on optical properties of Al-N codoped ZnO films

    H. P. He;F. Zhuge;Z. Z. Ye;L. P. Zhu

  • Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments.

    Fei Zhuge;Fei Zhuge;Shanshan Peng;Congli He;Xiaojian Zhu

  • Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches.

    Mi Li;Fei Zhuge;Xiaojian Zhu;Kuibo Yin

  • High-temperature tolerance in WTi-Al2O3 cermet-based solar selective absorbing coatings with low thermal emissivity

    Xiaoyu Wang;Junhua Gao;Haibo Hu;Hongliang Zhang

  • Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

    Ling Yan Liang;Hong Tao Cao;Xiao Bo Chen;Zhi Min Liu

  • Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing

    D. S. Shang;L. Shi;J. R. Sun;B. G. Shen

  • ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers

    Z. Z. Ye;J. G. Lu;Y. Z. Zhang;Y. J. Zeng

  • Synaptic devices based on purely electronic memristors

    Ruobing Pan;Ruobing Pan;Jun Li;Fei Zhuge;Liqiang Zhu

  • All-Optically Controlled Memristor

    Lingxiang Hu;Jing Yang;Jingrui Wang;Peihong Cheng

Frequent Co-Authors

Liping Zhu
Liping Zhu Zhejiang University
Run-Wei Li
Run-Wei Li Chinese Academy of Sciences
Jianguo Lu
Jianguo Lu Zhejiang University
Binghui Zhao
Binghui Zhao Zhejiang University
Zhizhen Ye
Zhizhen Ye Zhejiang University
Haiping He
Haiping He Zhejiang University
Yu-Jia Zeng
Yu-Jia Zeng Shenzhen University
Jingyun Huang
Jingyun Huang Zhejiang University
Bin Chen
Bin Chen Chinese Academy of Sciences
Zhimin Liu
Zhimin Liu Chinese Academy of Sciences

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