World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
49
Citations
8876
World Ranking
10537
National Ranking
125

Engineering and Technology

D-Index
48
Citations
8548
World Ranking
4587
National Ranking
37

Overview

Ching-Hwa Ho is affiliated with the National Taiwan University of Science and Technology in Taiwan and has contributed extensively to the fields of Materials Science and Engineering. The main areas of research include Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Cellular and Molecular Neuroscience, and Civil and Structural Engineering.

Their research topics span several specialized fields such as 2D Materials and Applications, Perovskite Materials and Applications, Chalcogenide Semiconductor Thin Films, Graphene research and applications, Advanced Memory and Neural Computing, Quantum Dots Synthesis and Properties, and MXene and MAX Phase Materials.

Ching-Hwa Ho has coauthored multiple publications with frequent collaborators including Kenji Watanabe, Takashi Taniguchi, J. Jadczak, J. Debus, and L. Bryja.

Frequent publication venues for their work include:

  • arXiv (Cornell University)
  • Nanotechnology
  • npj 2D Materials and Applications
  • The Journal of Physical Chemistry Letters
  • Materials Today Advances

Selected recent papers are as follows:

  • Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features (2020), Nature Communications
  • A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping (2023), Nature Electronics
  • Manipulating Ferroelectric Polarization and Spin Polarization of 2D CuInP2S6 Crystals for Photocatalytic CO2 Reduction (2024), Journal of the American Chemical Society
  • Inverse paired-pulse facilitation in neuroplasticity based on interface-boosted charge trapping layered electronics (2020), Nano Energy
  • The band-edge excitons observed in few-layer NiPS3 (2021), npj 2D Materials and Applications

Best Publications

  • Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

    Sefaattin Tongay;Sefaattin Tongay;Hasan Sahin;Changhyun Ko;Alex Luce

  • Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

    Erfu Liu;Yajun Fu;Yaojia Wang;Yanqing Feng

  • Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy

    Yung-Chang Lin;Hannu-Pekka Komsa;Chao-Hui Yeh;Torbjörn Björkman

  • High-Mobility InSe Transistors: The Role of Surface Oxides

    Po-Hsun Ho;Yih-Ren Chang;Yu-Cheng Chu;Min-Ken Li

  • Formation and stability of point defects in monolayer rhenium disulfide

    S Horzum;S Horzum;D Cakir;J Suh;S Tongay;S Tongay

  • High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

    Mengjiao Li;Che Yi Lin;Shih Hsien Yang;Yuan Ming Chang

  • Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

    Feng-Shou Yang;Feng-Shou Yang;Mengjiao Li;Mu-Pai Lee;Mu-Pai Lee;I-Ying Ho;I-Ying Ho

  • The study of optical band edge property of bismuth oxide nanowires α-Bi2O3.

    Ching-Hwa Ho;Ching-Hsiang Chan;Ying-Sheng Huang;Li-Chia Tien

  • Disorder engineering and conductivity dome in ReS2 with electrolyte gating.

    Dmitry Ovchinnikov;Fernando Gargiulo;Adrien Allain;Diego José Pasquier

  • Surface oxide effect on optical sensing and photoelectric conversion of α-In2Se3 hexagonal microplates.

    Ching-Hwa Ho;Chien-Hao Lin;Yi-Ping Wang;Ying-Cen Chen

  • A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

    Unknown

  • Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons, and metal-semiconductor Zn/ZnO nanospheres

    Jin-Han Lin;Ranjit A. Patil;Rupesh S. Devan;Zhe-An Liu

  • Bending Photoluminescence and Surface Photovoltaic Effect on Multilayer InSe 2D Microplate Crystals

    Ching-Hwa Ho;Yun-Ju Chu

  • Optical properties of the interband transitions of layered gallium sulfide

    C. H. Ho;S. L. Lin

  • Absorption-edge anisotropy in ReS 2 and ReSe 2 layered semiconductors

    C. H. Ho;Y. S. Huang;Kwong-Kau Tiong;P. C. Liao

  • Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x) Se2x Alloys with Distorted 1T Structure.

    Wen Wen;Yiming Zhu;Xuelu Liu;Hung-Pin Hsu

  • In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals

    C.H. Ho;Y.S. Huang;K.K. Tiong

  • Electronic structure of ReS 2 and ReSe 2 from first-principles calculations, photoelectron spectroscopy, and electrolyte electroreflectance

    C. H. Ho;Y. S. Huang;J. L. Chen;T. E. Dann

  • Thermoreflectance characterization of β-Ga_2O_3 thin-film nanostrips

    Ching-Hwa Ho;Chiao-Yeh Tseng;Li-Chia Tien

  • Crystal structure and band-edge transitions of ReS2−xSex layered compounds

    C.H Ho;Y.S Huang;P.C Liao;K.K Tiong

  • Influence of anionic substitution on the electrolyte electroreflectance study of band edge transitions in single crystal Cu2ZnSn(SxSe1−x)4 solid solutions

    S. Levcenco;D. Dumcenco;Y.P. Wang;Y.S. Huang

  • Optical absorption of ReS2 and ReSe2 single crystals

    C. H. Ho;P. C. Liao;Y. S. Huang;T. R. Yang

Frequent Co-Authors

Ying-Sheng Huang
Ying-Sheng Huang National Taiwan University of Science and Technology
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Po-Wen Chiu
Po-Wen Chiu National Tsing Hua University
Feng Miao
Feng Miao Nanjing University
Junqiao Wu
Junqiao Wu University of California, Berkeley
Yi Cui
Yi Cui Stanford University
Yuan-Ron Ma
Yuan-Ron Ma National Dong Hwa University
Rupesh S. Devan
Rupesh S. Devan Indian Institute of Technology Indore
Liming Xie
Liming Xie National Center for Nanoscience and Technology

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