World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
49
Citations
8876
World Ranking
10535
National Ranking
126

Engineering and Technology

D-Index
48
Citations
8548
World Ranking
4589
National Ranking
37

Ching-Hwa Ho publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Ching-Hwa Ho sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 226 publications — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Ching-Hwa Ho D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Ching-Hwa Ho sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 48 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Ching-Hwa Ho is affiliated with the National Taiwan University of Science and Technology in Taiwan and has contributed extensively to the fields of Materials Science and Engineering. The main areas of research include Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Cellular and Molecular Neuroscience, and Civil and Structural Engineering.

Their research topics span several specialized fields such as 2D Materials and Applications, Perovskite Materials and Applications, Chalcogenide Semiconductor Thin Films, Graphene research and applications, Advanced Memory and Neural Computing, Quantum Dots Synthesis and Properties, and MXene and MAX Phase Materials.

Ching-Hwa Ho has coauthored multiple publications with frequent collaborators including Kenji Watanabe, Takashi Taniguchi, J. Jadczak, J. Debus, and L. Bryja.

Frequent publication venues for their work include:

  • arXiv (Cornell University)
  • Nanotechnology
  • npj 2D Materials and Applications
  • The Journal of Physical Chemistry Letters
  • Materials Today Advances

Selected recent papers are as follows:

  • Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features (2020), Nature Communications
  • A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping (2023), Nature Electronics
  • Manipulating Ferroelectric Polarization and Spin Polarization of 2D CuInP2S6 Crystals for Photocatalytic CO2 Reduction (2024), Journal of the American Chemical Society
  • Inverse paired-pulse facilitation in neuroplasticity based on interface-boosted charge trapping layered electronics (2020), Nano Energy
  • The band-edge excitons observed in few-layer NiPS3 (2021), npj 2D Materials and Applications

Best Publications

  • Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

    Sefaattin Tongay;Sefaattin Tongay;Hasan Sahin;Changhyun Ko;Alex Luce

  • Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

    Erfu Liu;Yajun Fu;Yaojia Wang;Yanqing Feng

  • Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy

    Yung-Chang Lin;Hannu-Pekka Komsa;Chao-Hui Yeh;Torbjörn Björkman

  • High-Mobility InSe Transistors: The Role of Surface Oxides

    Po-Hsun Ho;Yih-Ren Chang;Yu-Cheng Chu;Min-Ken Li

  • Formation and stability of point defects in monolayer rhenium disulfide

    S Horzum;S Horzum;D Cakir;J Suh;S Tongay;S Tongay

  • High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

    Mengjiao Li;Che Yi Lin;Shih Hsien Yang;Yuan Ming Chang

  • Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

    Feng-Shou Yang;Feng-Shou Yang;Mengjiao Li;Mu-Pai Lee;Mu-Pai Lee;I-Ying Ho;I-Ying Ho

  • The study of optical band edge property of bismuth oxide nanowires α-Bi2O3.

    Ching-Hwa Ho;Ching-Hsiang Chan;Ying-Sheng Huang;Li-Chia Tien

  • Disorder engineering and conductivity dome in ReS2 with electrolyte gating.

    Dmitry Ovchinnikov;Fernando Gargiulo;Adrien Allain;Diego José Pasquier

  • Surface oxide effect on optical sensing and photoelectric conversion of α-In2Se3 hexagonal microplates.

    Ching-Hwa Ho;Chien-Hao Lin;Yi-Ping Wang;Ying-Cen Chen

  • A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

    Unknown

  • Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons, and metal-semiconductor Zn/ZnO nanospheres

    Jin-Han Lin;Ranjit A. Patil;Rupesh S. Devan;Zhe-An Liu

  • Bending Photoluminescence and Surface Photovoltaic Effect on Multilayer InSe 2D Microplate Crystals

    Ching-Hwa Ho;Yun-Ju Chu

  • Optical properties of the interband transitions of layered gallium sulfide

    C. H. Ho;S. L. Lin

  • Absorption-edge anisotropy in ReS 2 and ReSe 2 layered semiconductors

    C. H. Ho;Y. S. Huang;Kwong-Kau Tiong;P. C. Liao

  • Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x) Se2x Alloys with Distorted 1T Structure.

    Wen Wen;Yiming Zhu;Xuelu Liu;Hung-Pin Hsu

  • In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals

    C.H. Ho;Y.S. Huang;K.K. Tiong

  • Electronic structure of ReS 2 and ReSe 2 from first-principles calculations, photoelectron spectroscopy, and electrolyte electroreflectance

    C. H. Ho;Y. S. Huang;J. L. Chen;T. E. Dann

  • Thermoreflectance characterization of β-Ga_2O_3 thin-film nanostrips

    Ching-Hwa Ho;Chiao-Yeh Tseng;Li-Chia Tien

  • Crystal structure and band-edge transitions of ReS2−xSex layered compounds

    C.H Ho;Y.S Huang;P.C Liao;K.K Tiong

  • Influence of anionic substitution on the electrolyte electroreflectance study of band edge transitions in single crystal Cu2ZnSn(SxSe1−x)4 solid solutions

    S. Levcenco;D. Dumcenco;Y.P. Wang;Y.S. Huang

  • Optical absorption of ReS2 and ReSe2 single crystals

    C. H. Ho;P. C. Liao;Y. S. Huang;T. R. Yang

Frequent Co-Authors

Ying-Sheng Huang
Ying-Sheng Huang National Taiwan University of Science and Technology
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Po-Wen Chiu
Po-Wen Chiu National Tsing Hua University
Feng Miao
Feng Miao Nanjing University
Junqiao Wu
Junqiao Wu University of California, Berkeley
Yi Cui
Yi Cui Stanford University
Yuan-Ron Ma
Yuan-Ron Ma National Dong Hwa University
Rupesh S. Devan
Rupesh S. Devan Indian Institute of Technology Indore
Liming Xie
Liming Xie National Center for Nanoscience and Technology

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