World's Best Scientists 2026 revealed!

B. T. Jonker publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where B. T. Jonker sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

The last bar groups every scientist with 1,163 publications or more.

B. T. Jonker D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where B. T. Jonker sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

The last bar groups every scientist with 165 D-Index or more.

Overview

B. T. Jonker is affiliated with the United States Naval Research Laboratory in the United States. Their professional focus is centered within this institution, contributing to its research activities and scientific mission.

The scientist does not have a publicly listed collection of recent papers, co-authors, or publications in frequent venues based on the available data. Similarly, there is no information on book publications, primary and subfields of study, or specific research topics associated with their work.

There are no recorded awards or distinctions attributed to B. T. Jonker in the accessible information. The data also confirms that the scientist is currently alive.

The available profile of B. T. Jonker indicates an active research presence within the United States Naval Research Laboratory, though further details concerning their specific scientific contributions, collaborations, or areas of expertise are not provided in the referenced data.

Best Publications

  • Chemical Vapor Sensing with Monolayer MoS2

    F. K. Perkins;A. L. Friedman;E. Cobas;P. M. Campbell

  • Robust electrical spin injection into a semiconductor heterostructure

    B. T. Jonker;Y. D. Park;B. R. Bennett;H. D. Cheong

  • Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3

    C. H. Li;O. M. J. van ‘t Erve;J. T. Robinson;Y. Liu

  • Properties of Fe single‐crystal films grown on (100)GaAs by molecular‐beam epitaxy

    J. J. Krebs;B. T. Jonker;G. A. Prinz

  • Exciton diamagnetic shifts and valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla.

    Andreas V. Stier;Kathleen M. McCreary;Berend T. Jonker;Junichiro Kono

  • Valley polarization and intervalley scattering in monolayer MoS2

    G. Kioseoglou;A. T. Hanbicki;M. Currie;A. L. Friedman

  • Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

    A.T. Hanbicki;M. Currie;G. Kioseoglou;A.L. Friedman

  • Spin-polarized photoemission study of epitaxial Fe(001) films on Ag(001).

    B. T. Jonker;K. H. Walker;E. Kisker;G. A. Prinz

  • INFLUENCE OF SUBSTRATE SURFACE RECONSTRUCTION ON THE GROWTH AND MAGNETIC PROPERTIES OF FE ON GAAS(001)

    E. M. Kneedler;B. T. Jonker;P. M. Thibado;R. J. Wagner

  • Direct evidence for perpendicular spin orientations and enhanced hyperfine fields in ultrathin Fe(100) films on Ag(100).

    N. C. Koon;B. T. Jonker;F. A. Volkening;J. J. Krebs

  • Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions.

    Enrique Cobas;Adam L Friedman;Olaf M J Van't Erve;Jeremy T Robinson

  • Magnetoresistance of Mn:Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix

    Y. D. Park;A. Wilson;A. T. Hanbicki;J. E. Mattson

  • Low-resistance spin injection into silicon using graphene tunnel barriers

    O. M. J. van 't Erve;A. L. Friedman;E. Cobas;C. H. Li

  • Large‐Area Synthesis of Continuous and Uniform MoS2 Monolayer Films on Graphene

    Kathleen M. McCreary;Aubrey T. Hanbicki;Jeremy T. Robinson;Enrique Cobas

  • Comparison of Fe/Schottky and Fe/Al2O3 tunnel barrier contacts for electrical spin injection into GaAs

    O. M. J. van ’t Erve;G. Kioseoglou;A. T. Hanbicki;C. H. Li

  • The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS 2

    Kathleen M. McCreary;Aubrey T. Hanbicki;Simranjeet Singh;Roland K. Kawakami

  • Exchange bias of the interface spin system at the Fe/MgO interface

    Y. Fan;Y. Fan;K. J. Smith;G. Lüpke;A. T. Hanbicki

  • Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes.

    R. M. Stroud;A. T. Hanbicki;Y. D. Park;G. Kioseoglou

  • Determination of interface atomic structure and its impact on spin transport using Z-contrast microscopy and density-functional theory.

    Thomas J. Zega;Aubrey T. Hanbicki;Steven C. Erwin;Igor Žutić;Igor Žutić

  • Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes

    B. T. Jonker;A. T. Hanbicki;Y. D. Park;G. Itskos

Frequent Co-Authors

Rhonda M. Stroud
Rhonda M. Stroud Arizona State University
Brian R. Bennett
Brian R. Bennett United States Naval Research Laboratory
Lourdes Salamanca-Riba
Lourdes Salamanca-Riba University of Maryland, College Park
Lloyd J. Whitman
Lloyd J. Whitman United States Naval Research Laboratory
Jeremy T. Robinson
Jeremy T. Robinson United States Naval Research Laboratory
Igor Vurgaftman
Igor Vurgaftman United States Naval Research Laboratory
Yuri Suzuki
Yuri Suzuki Stanford University
Lincoln J. Lauhon
Lincoln J. Lauhon Northwestern University
Teruo Ono
Teruo Ono Kyoto University
Harald Brune
Harald Brune École Polytechnique Fédérale de Lausanne

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing B. T. Jonker

Trending Scientists

Recently Published Articles