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IEEE

International Symposium on Applications of Ferroelectrics (ISAF)

Location: Cleveland , United States

Submission deadline: 12/23/2022

Conference dates: 7/23/2023 - 7/27/2023

Research H-index
7

Ranking & Metrics

Discipline name Position Best Scientists Publications D-Index
Materials Science 28 30 37 6
Electronics and Electrical Engineering 342 21 30 6

Call for Papers

ISAF TOPICS
2023.ieee-isaf.org
» Fundamentals of ferroelectrics
and multiferroic materials (theory,
modeling and experiments)
» Processing of piezoelectric
crystals, ceramics, thick and thin
films, composite, polymers, glassceramics and MLCCs.
» Emergent Ferroelectrics,
Dielectrics, and Piezoelectrics
(Fluorite Ferroelectrics, Wurzites,
Lead-free, Hybrid materials)
» Structure characterization
and properties of ferroelectric
materials (dielectric, piezoelectric,
ferroelectric, pyroelectric,
electrocaloric, flexoelectric,
photovoltaics and
photocatalytics, etc.)
» Applications of ferroelectrics
(sensing, transducing, thermal
imaging, energy harvesting and
storage, etc.)

TSIF TOPICS
Materials for non-volatile memory
and neuromorphic computing
including ferroelectrics, phase
change, RRAM, magnetic)
Integrated dielectrics (energy
storage, 5G, high K, gate
dielectrics)
»Wearable and implantable
devices biosensing, neural
stimulation, prosthetics, hard
coatings)
» Processing routes for
heterogeneous materials
integration (oxides,
chalcogenides, metals, and
carbons)
» Hybrid perovskites (photovoltaics,
nonlinear optics, semiconductors)
Piezoelectric MEMS and NEMS
(resonators, energy harvesters,
sensors, Gctuators, and
transducers)

PFM TOPICS
Instrumental aspects of PFM, ESM,
SS-PFM and related techniques
Nanoelectromechanics of
materials and PFM/ESM theory
» lonic conductors, battery
materials and fuel cells on the
nanoscale
» Ferroelectric photovoltaics and
tip-enhanced phenomena
Ferroelectric tunnelling and
memristor effect via PFM/ESM
Multiferroic phenomena on the
nanoscale
» Ferroelectric semiconductors and
surface phenomena
»Interface engineering via PEM
» Biocompatible & organic polar
materials on the nanoscale
Disordered ferroelectrics and
mesoscopic effects by PFM
Ferroelectric data storage and
polarization lithography
»1D and 2D nanostructured
materials via PFM

Overview

This ranking provides a comprehensive evaluation of scientific conferences in the field of Electronics and Electrical Engineering. Compiled by Research.com, a leading authority in science research across all major fields, the list leverages trusted data on scientific contributions amassed since 2014. The determination of conference positions in this ranking is based on Research.com's unique bibliometric score, which is calculated from the estimated h-index and the number of leading scientists who have participated in the respective conferences over the previous three years.

The ranking incorporates Impact Score values gathered as of 2024-11-27, ensuring the most current assessment of conference influence and reputation. The selection and analysis process involved the meticulous examination of over 2,204 conferences, each chosen after detailed scrutiny and rigorous evaluation of more than 95,378 scientific documents published in the last three years by 6,160 leading and well-respected scientists in Electronics and Electrical Engineering.

The depth and complexity of this ranking process underscore Research.com's commitment to academic rigor and authoritative analysis, providing valuable insights for researchers and professionals seeking high-impact conferences in this field. For a comprehensive overview of the methodology used to compute these ranking scores, please visit our Methodology Page.

Papers citation over time

A key indicator for each conference is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

The top authors publishing at International Symposium on Applications of Ferroelectrics (based on the number of publications) are:

  • Tadashi Shiosaki (16 papers) published 14 papers at the last edition, 13 more than at the previous edition,
  • Andrew J. Bell (15 papers) published 8 papers at the last edition, 3 more than at the previous edition,
  • Takaaki Tsurumi (13 papers) published 9 papers at the last edition, 7 more than at the previous edition,
  • Satoshi Wada (13 papers) published 8 papers at the last edition, 6 more than at the previous edition,
  • Jun Akedo (13 papers) published 12 papers at the last edition, 11 more than at the previous edition.

The overall trend for top authors publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top authors.

Only papers with recognized affiliations are considered

The top affiliations publishing at International Symposium on Applications of Ferroelectrics (based on the number of publications) are:

  • Tokyo Institute of Technology (30 papers) published 22 papers at the last edition, 19 more than at the previous edition,
  • Nara Institute of Science and Technology (17 papers) published 15 papers at the last edition, 14 more than at the previous edition,
  • Pennsylvania State University (15 papers) published 3 papers at the last edition, 3 less than at the previous edition,
  • Shanghai University (15 papers) published 9 papers at the last edition, 6 more than at the previous edition,
  • National Institute of Advanced Industrial Science and Technology (15 papers) published 14 papers at the last edition, 13 more than at the previous edition.

The overall trend for top affiliations publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions at the conference edition to all articles published within that conference. The best research institutions were selected based on the largest number of articles published during all editions of the conference.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2007 edition, 21.52% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 34.18% were posted by at least one author from the top 10 institutions publishing at the conference. Another 14.35% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 24.05% of all publications and 27.43% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of conferences they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same conference from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the conference in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing at a conference. The index includes the authors publishing at the last edition of a conference, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

  • Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
  • Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
  • Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
  • Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
  • Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

Related Online Degrees & Career Pathways

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