Ranking & Metrics Conference Call for Papers Other Conferences in United States
Annual IEEE International Electron Devices Meeting

Annual IEEE International Electron Devices Meeting

San Francisco , United States

Submission Deadline: Thursday 14 Jul 2022

Conference Dates: Dec 03, 2022 - Dec 07, 2022

Research
Impact Score 4.60

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Ranking & Metrics Impact Score is a novel metric devised to rank conferences based on the number of contributing the best scientists in addition to the h-index estimated from the scientific papers published by the best scientists. See more details on our methodology page.

Research Impact Score: 4.60
Contributing Best Scientists: 153
H5-index:
Papers published by Best Scientists 234
Research Ranking (Electronics and Electrical Engineering) 2
Research Ranking (Materials Science) 1
Research Ranking (Physics) 7

Conference Call for Papers

Advanced Logic Technology
(ALT)
Topics
Papers are solicited in the following themes of interest:
 CMOS platform technologies & opportunities
 Logic device performance and circuit design challenges
 Advanced, novel process integration schemes and
(applications-driven) scaling approaches
 Process module innovations and progresses in process
control & process metrology
 Design technology co-optimization (DTCO/STCO)
New or trending areas include:
 Si1-xGex channels, GAA (vertically stacked) nanowires
and nanosheets based devices and circuits
 Sequential, monolithic 3D integration, heterogenous
chiplets, 2.5/3D integration
 Interconnects (TSV, BEOL, Frontside and Backside
connectivity)
 BEOL compatible transistors

Emerging Device & Compute
Technology (EDT)
Topics
Papers are solicited in the following themes of interest:
 Devices using low-dimensional materials
 Devices with novel functions and/or materials for
neuromorphic, in-memory, and approximate novel
computing devices
 Spintronic and magnetic devices
 Steep-slope devices
 Quantum computing devices
New or trending areas include:
 Topological materials and devices, and phase transitions
transistors
 Emerging state machines, time dynamical systems
 Novel cryogenic devices

Microwave, Millimeter Wave &
Analog Technology (MAT)
Topics
Papers are solicited in the following themes of interest:
 High Performance III-V, III-Nitride and Si, SiGe devices
for mm-wave to THz.
 Power device technologies for micro and mm-wave.
 Micro and mm-wave analog front ends, PAs, LNAs and
mixers.
 Energy harvesting devices and circuits
 Tunable passives, SAW/BAW devices, antenna arrays
New or trending areas include:
 Device and circuits for 5G and 6G
 Antenna arrays and beam forming
 Cryogenic RF devices

Modeling & Simulation (MS)
Topics
Papers are solicited in the following themes of interest:
 Technology CAD and benchmarking
 Advanced logic and memory device modeling
 Atomistic material, process, and interconnect simulation
 Compact models for DTCO
 Alternative computing device modeling
 Nanoscale (bio) sensors modeling
New or trending areas include:
 Multi-scale simulation with hybrid techniques
 Advanced packaging and 3D integration modeling
 Thermal modeling
 Device modeling for photonics
 Device modeling for in-memory and in-sensor computing

Memory Technology (MT)
Topics
Papers are solicited in the following themes of interest:
 Conventional memories
 Emerging memories
 3D memory technologies
 Computing-in-memory
New or trending areas include:
 Emerging memories for neural networks
 Memory-enabled artificial intelligence applications
 Memory for bio-inspired computing
 System-technology co-optimization
 New memory hierarchy

Optoelectronics, Displays &
Imaging Systems (ODI)
Topics
Papers are solicited in the following themes of interest:
 Heterogeneous optoelectronic integration including
sources, modulators or detectors
 Optoelectronic integration for neuromorphic computing
 Single photon devices
 Luminescent devices based on new materials including
perovskites and quantum dots
 Displays and imagers for augmented or virtual reality
 Holographic devices and displays
 Displays with unconventional form or size
 Photodetectors and imagers with new materials or
flexible platform and printed electronics
 Imagers with unconventional spectral bandwidth, high
sensitivity, or high time-resolution
New or trending areas include:
 Topological optoelectronics and photonics
 Intelligent Image Sensors
 In-display Sensors

Power Devices & Systems (PDS)
Topics
Papers are solicited in the following themes of interest:
 Power devices, modules, and systems
 System-level impact of power devices
 Manufacturing processes, device design, modeling,
physics, and reliability of power devices
 Fundamental studies on doping, traps, interface states,
and device reliability for power switching devices
New or trending areas include:
 Wide bandgap and ultra-wide bandgap semiconductors
 Power device for applications for automotive and
aviation to smart grid
 Power devices or circuits and its reliability

Reliability of Systems & Devices
(RSD)
Topics
Papers are solicited in the following themes of interest:
 Reliability of FEOL/MEOL/BEOL, latch‐up, and ESD;
 Design for reliability and variability-aware design,
 Robustness and security of electronic circuits and systems.
 Reliability of devices and systems for memory,
biomedical, automotive and aerospace
 Reliable systems with unreliable devices
 Reliability of cryogenic devices for future quantum
computing applications
 Noise characterization
New or trending areas include:
 Degradation mechanisms of emerging memories
 Reliability of devices, circuits and systems for
more-than-Moore such as bio and DNA
 Reliability of automotive and aerospace devices circuits
and systems

Sensors, MEMS & Bioelectronics
(SMB)
Topics
Papers are solicited in the following themes of interest:
 Physical and biochemical integrated sensors
 Energy harvesting and storage devices
 Flexible devices for wearable applications
 MEMS for Internet of Things
 Bio-electronic interfaces and implantable devices
New or trending areas include:
 Intelligent sensors with embedded AI
 Sensors and devices for human-machine interface
 Hybrid organic/inorganic microfabrication and devices
 Sensors and motors for haptics

Overview

Top Research Topics at International Electron Devices Meeting?

  • Optoelectronics (54.14%)
  • Electrical engineering (33.10%)
  • Electronic engineering (25.64%)

International Electron Devices Meeting focuses largely on the fields of Optoelectronics, Electrical engineering, Electronic engineering, Transistor and Silicon. The research on Optoelectronics discussed in International Electron Devices Meeting draws on the closely related field of MOSFET. International Electron Devices Meeting holds forums on MOSFET that merges themes from other disciplines such as Silicon on insulator, Electron mobility and Gate oxide.

The studies in Electrical engineering featured incorporate elements of Power (physics) and Capacitance. In the conference, Integrated circuit, Dielectric and Reliability (semiconductor) are investigated in conjunction with one another to address concerns in Electronic engineering research. The event features Transistor research that overlaps with concepts in Common emitter.

Silicon research discussed connects with the study of Analytical chemistry. The study on CMOS presented is investigated in conjunction with research in NMOS logic.

What are the most cited papers published at the conference?

  • Ion implantation in semiconductors (1219 citations)
  • RFCPUs on glass and plastic substrates fabricated by TFT transfer technology (974 citations)
  • High performance amorphous oxide thin film transistors with self-aligned top-gate structure (951 citations)

Research areas of the most cited articles at International Electron Devices Meeting:

The conference articles mainly tackle studies in Optoelectronics, Electrical engineering, Electronic engineering, MOSFET and CMOS. Issues in Optoelectronics were discussed in the conference papers, taking into consideration concepts from other disciplines like Transistor, Gate oxide and Logic gate. The published articles deal with Electrical engineering in conjunction with Capacitance and similar fields in Capacitor.

What topics the last edition of the conference is best known for?

  • Quantum mechanics
  • Optics
  • Electron

The previous edition focused in particular on these issues:

The aim of the conference is to expand the discussion of research in Optoelectronics, Transistor, Logic gate, CMOS and Electronic engineering. It dives deep in exploring the relationship between the study of Optoelectronics and Field-effect transistor. Transistor research presented in the conference encompasses a variety of subjects, including Non-volatile memory, Computer hardware and Electric field.

The concepts on Logic gate presented in the event can also apply to other research fields, including Threshold voltage, Noise (electronics) and Scaling. Research in CMOS discussed is concerned with the study of Electrical engineering as a whole. International Electron Devices Meeting explores research in Magnetoresistive random-access memory and overlapping concepts in Tunnel magnetoresistance to expand the discourse in Electronic engineering.

The most cited articles from the last conference are:

  • High Speed Memory Operation in Channel-Last, Back-gated Ferroelectric Transistors (10 citations)
  • A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing (9 citations)
  • 1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities (9 citations)

Papers citation over time

A key indicator for each conference is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

Research.com

The top authors publishing at International Electron Devices Meeting (based on the number of publications) are:

  • Chenming Hu (118 papers) absent at the last edition,
  • Guido Groeseneken (74 papers) published 1 paper at the last edition, 2 less than at the previous edition,
  • Dim-Lee Kwong (57 papers) absent at the last edition,
  • Naoto Horiguchi (54 papers) published 4 papers at the last edition, 2 less than at the previous edition,
  • Krishna C. Saraswat (51 papers) published 1 paper at the last edition.

The overall trend for top authors publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top authors.

Research.com

Only papers with recognized affiliations are considered

The top affiliations publishing at International Electron Devices Meeting (based on the number of publications) are:

  • IBM (726 papers) published 11 papers at the last edition, 3 less than at the previous edition,
  • Bell Labs (524 papers) absent at the last edition,
  • Toshiba (463 papers) published 1 paper at the last edition the same number as at the previous edition,
  • Katholieke Universiteit Leuven (354 papers) published 29 papers at the last edition, 1 more than at the previous edition,
  • Stanford University (337 papers) published 5 papers at the last edition, 3 more than at the previous edition.

The overall trend for top affiliations publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top affiliations.

Research.com

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions at the conference edition to all articles published within that conference. The best research institutions were selected based on the largest number of articles published during all editions of the conference.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

Research.com

During the most recent 2020 edition, 4.76% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 28.64% were posted by at least one author from the top 10 institutions publishing at the conference. Another 19.55% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 15.45% of all publications and 36.36% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of conferences they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same conference from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the conference in relation to all participants in a given year.

Research.com

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

Research.com

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing at a conference. The index includes the authors publishing at the last edition of a conference, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

  • Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
  • Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
  • Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
  • Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
  • Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

Research.com

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

Research.com

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Previous Editions

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