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IEEE

Annual IEEE International Electron Devices Meeting (IEDM)

Location: San Francisco , United States

Submission deadline: 7/14/2022

Conference dates: 12/3/2022 - 12/7/2022

Research H-index
34

Ranking & Metrics

Discipline name Position Best Scientists Publications D-Index
Materials Science 1 203 370 28
Electronics and Electrical Engineering 10 308 608 33
Engineering and Technology 2 53 132 18

Call for Papers

Advanced Logic Technology
(ALT)
Topics
Papers are solicited in the following themes of interest:
 CMOS platform technologies & opportunities
 Logic device performance and circuit design challenges
 Advanced, novel process integration schemes and
(applications-driven) scaling approaches
 Process module innovations and progresses in process
control & process metrology
 Design technology co-optimization (DTCO/STCO)
New or trending areas include:
 Si1-xGex channels, GAA (vertically stacked) nanowires
and nanosheets based devices and circuits
 Sequential, monolithic 3D integration, heterogenous
chiplets, 2.5/3D integration
 Interconnects (TSV, BEOL, Frontside and Backside
connectivity)
 BEOL compatible transistors

Emerging Device & Compute
Technology (EDT)
Topics
Papers are solicited in the following themes of interest:
 Devices using low-dimensional materials
 Devices with novel functions and/or materials for
neuromorphic, in-memory, and approximate novel
computing devices
 Spintronic and magnetic devices
 Steep-slope devices
 Quantum computing devices
New or trending areas include:
 Topological materials and devices, and phase transitions
transistors
 Emerging state machines, time dynamical systems
 Novel cryogenic devices

Microwave, Millimeter Wave &
Analog Technology (MAT)
Topics
Papers are solicited in the following themes of interest:
 High Performance III-V, III-Nitride and Si, SiGe devices
for mm-wave to THz.
 Power device technologies for micro and mm-wave.
 Micro and mm-wave analog front ends, PAs, LNAs and
mixers.
 Energy harvesting devices and circuits
 Tunable passives, SAW/BAW devices, antenna arrays
New or trending areas include:
 Device and circuits for 5G and 6G
 Antenna arrays and beam forming
 Cryogenic RF devices

Modeling & Simulation (MS)
Topics
Papers are solicited in the following themes of interest:
 Technology CAD and benchmarking
 Advanced logic and memory device modeling
 Atomistic material, process, and interconnect simulation
 Compact models for DTCO
 Alternative computing device modeling
 Nanoscale (bio) sensors modeling
New or trending areas include:
 Multi-scale simulation with hybrid techniques
 Advanced packaging and 3D integration modeling
 Thermal modeling
 Device modeling for photonics
 Device modeling for in-memory and in-sensor computing

Memory Technology (MT)
Topics
Papers are solicited in the following themes of interest:
 Conventional memories
 Emerging memories
 3D memory technologies
 Computing-in-memory
New or trending areas include:
 Emerging memories for neural networks
 Memory-enabled artificial intelligence applications
 Memory for bio-inspired computing
 System-technology co-optimization
 New memory hierarchy

Optoelectronics, Displays &
Imaging Systems (ODI)
Topics
Papers are solicited in the following themes of interest:
 Heterogeneous optoelectronic integration including
sources, modulators or detectors
 Optoelectronic integration for neuromorphic computing
 Single photon devices
 Luminescent devices based on new materials including
perovskites and quantum dots
 Displays and imagers for augmented or virtual reality
 Holographic devices and displays
 Displays with unconventional form or size
 Photodetectors and imagers with new materials or
flexible platform and printed electronics
 Imagers with unconventional spectral bandwidth, high
sensitivity, or high time-resolution
New or trending areas include:
 Topological optoelectronics and photonics
 Intelligent Image Sensors
 In-display Sensors

Power Devices & Systems (PDS)
Topics
Papers are solicited in the following themes of interest:
 Power devices, modules, and systems
 System-level impact of power devices
 Manufacturing processes, device design, modeling,
physics, and reliability of power devices
 Fundamental studies on doping, traps, interface states,
and device reliability for power switching devices
New or trending areas include:
 Wide bandgap and ultra-wide bandgap semiconductors
 Power device for applications for automotive and
aviation to smart grid
 Power devices or circuits and its reliability

Reliability of Systems & Devices
(RSD)
Topics
Papers are solicited in the following themes of interest:
 Reliability of FEOL/MEOL/BEOL, latch‐up, and ESD;
 Design for reliability and variability-aware design,
 Robustness and security of electronic circuits and systems.
 Reliability of devices and systems for memory,
biomedical, automotive and aerospace
 Reliable systems with unreliable devices
 Reliability of cryogenic devices for future quantum
computing applications
 Noise characterization
New or trending areas include:
 Degradation mechanisms of emerging memories
 Reliability of devices, circuits and systems for
more-than-Moore such as bio and DNA
 Reliability of automotive and aerospace devices circuits
and systems

Sensors, MEMS & Bioelectronics
(SMB)
Topics
Papers are solicited in the following themes of interest:
 Physical and biochemical integrated sensors
 Energy harvesting and storage devices
 Flexible devices for wearable applications
 MEMS for Internet of Things
 Bio-electronic interfaces and implantable devices
New or trending areas include:
 Intelligent sensors with embedded AI
 Sensors and devices for human-machine interface
 Hybrid organic/inorganic microfabrication and devices
 Sensors and motors for haptics

Overview

This comprehensive ranking presents the leading scientific conferences in the field of Engineering and Technology. The ranking is meticulously prepared by Research.com, an authoritative platform renowned for providing reliable data and insights on scientific research and contributions across all major fields, including Engineering and Technology, since 2014.

Each conference's position in the ranking is determined by a unique bibliometric score developed by Research.com. This score is calculated based on the estimated h-index, as well as the number of leading scientists who have participated in the conference over the past three years. Such a multidimensional approach ensures that the ranking accurately reflects both the scientific impact and the prominence of expert engagement at each conference.

The Impact Score values included in this ranking were gathered as of 2024-11-27, providing the most recent and relevant assessment of conference influence. The ranking process entailed a rigorous and detailed review of more than 2,262 conferences. These were selected after exhaustive analysis of over 26,934 scientific documents published in the last three years by 9,385 distinguished and highly respected scientists within the Engineering and Technology community.

This in-depth, expert-driven evaluation process guarantees that the ranking offered here is both credible and authoritative, serving as a valuable guide for researchers, institutions, and professionals seeking to identify the most impactful scientific conferences in Engineering and Technology.

For a comprehensive overview of the methodology used to compute the ranking scores, please refer to our Methodology Page.

Papers citation over time

A key indicator for each conference is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

The top authors publishing at International Electron Devices Meeting (based on the number of publications) are:

  • Chenming Hu (118 papers) absent at the last edition,
  • Guido Groeseneken (74 papers) published 1 paper at the last edition, 2 less than at the previous edition,
  • Dim-Lee Kwong (57 papers) absent at the last edition,
  • Naoto Horiguchi (54 papers) published 4 papers at the last edition, 2 less than at the previous edition,
  • Krishna C. Saraswat (51 papers) published 1 paper at the last edition.

The overall trend for top authors publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top authors.

Only papers with recognized affiliations are considered

The top affiliations publishing at International Electron Devices Meeting (based on the number of publications) are:

  • IBM (726 papers) published 11 papers at the last edition, 3 less than at the previous edition,
  • Bell Labs (524 papers) absent at the last edition,
  • Toshiba (463 papers) published 1 paper at the last edition the same number as at the previous edition,
  • Katholieke Universiteit Leuven (354 papers) published 29 papers at the last edition, 1 more than at the previous edition,
  • Stanford University (337 papers) published 5 papers at the last edition, 3 more than at the previous edition.

The overall trend for top affiliations publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions at the conference edition to all articles published within that conference. The best research institutions were selected based on the largest number of articles published during all editions of the conference.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2020 edition, 4.76% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 28.64% were posted by at least one author from the top 10 institutions publishing at the conference. Another 19.55% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 15.45% of all publications and 36.36% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of conferences they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same conference from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the conference in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing at a conference. The index includes the authors publishing at the last edition of a conference, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

  • Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
  • Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
  • Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
  • Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
  • Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

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