San Francisco , United States
Submission Deadline: Thursday 14 Jul 2022
Conference Dates: Dec 03, 2022 - Dec 07, 2022
International Electron Devices Meeting focuses largely on the fields of Optoelectronics, Electrical engineering, Electronic engineering, Transistor and Silicon. The research on Optoelectronics discussed in International Electron Devices Meeting draws on the closely related field of MOSFET. International Electron Devices Meeting holds forums on MOSFET that merges themes from other disciplines such as Silicon on insulator, Electron mobility and Gate oxide.
The studies in Electrical engineering featured incorporate elements of Power (physics) and Capacitance. In the conference, Integrated circuit, Dielectric and Reliability (semiconductor) are investigated in conjunction with one another to address concerns in Electronic engineering research. The event features Transistor research that overlaps with concepts in Common emitter.
Silicon research discussed connects with the study of Analytical chemistry. The study on CMOS presented is investigated in conjunction with research in NMOS logic.
The conference articles mainly tackle studies in Optoelectronics, Electrical engineering, Electronic engineering, MOSFET and CMOS. Issues in Optoelectronics were discussed in the conference papers, taking into consideration concepts from other disciplines like Transistor, Gate oxide and Logic gate. The published articles deal with Electrical engineering in conjunction with Capacitance and similar fields in Capacitor.
The aim of the conference is to expand the discussion of research in Optoelectronics, Transistor, Logic gate, CMOS and Electronic engineering. It dives deep in exploring the relationship between the study of Optoelectronics and Field-effect transistor. Transistor research presented in the conference encompasses a variety of subjects, including Non-volatile memory, Computer hardware and Electric field.
The concepts on Logic gate presented in the event can also apply to other research fields, including Threshold voltage, Noise (electronics) and Scaling. Research in CMOS discussed is concerned with the study of Electrical engineering as a whole. International Electron Devices Meeting explores research in Magnetoresistive random-access memory and overlapping concepts in Tunnel magnetoresistance to expand the discourse in Electronic engineering.
A key indicator for each conference is its effectiveness in reaching other researchers with the papers published at that venue.
The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.
The top authors publishing at International Electron Devices Meeting (based on the number of publications) are:
The overall trend for top authors publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top authors.
Only papers with recognized affiliations are considered
The top affiliations publishing at International Electron Devices Meeting (based on the number of publications) are:
The overall trend for top affiliations publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top affiliations.
The publication chance index shows the ratio of articles published by the best research institutions at the conference edition to all articles published within that conference. The best research institutions were selected based on the largest number of articles published during all editions of the conference.
The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.
During the most recent 2020 edition, 4.76% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 28.64% were posted by at least one author from the top 10 institutions publishing at the conference. Another 19.55% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 15.45% of all publications and 36.36% were from other institutions.
A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of conferences they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same conference from year to year.
The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the conference in relation to all participants in a given year.
The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.
Our experience to innovation index was created to show a cross-section of the experience level of authors publishing at a conference. The index includes the authors publishing at the last edition of a conference, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).
The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:
The chart below illustrates experience levels of first authors in cases of publications with multiple authors.
Jun 11, 2023 - Jun 16, 2023
San Diego , United States, United States
Deadline: Tuesday 06 Dec 2022
May 21, 2023 - May 25, 2023
Orlando , United States, United States
Deadline: Monday 05 Dec 2022
Mar 22, 2023 - Mar 24, 2023
Johns Hopkins University , United States, United States
Deadline: Saturday 10 Dec 2022
Mar 22, 2023 - Mar 24, 2023
Johns Hopkins University, Baltimore , United States, United States
Deadline: Saturday 10 Dec 2022
Dec 11, 2021 - Dec 11, 2021
San Francisco , United States, United States
Annual IEEE International Electron Devices Meeting
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