World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 44 12012 11614 3295 3280 152 8010

Wensheng Shi publications per year

The chart shows the history of publications by Wensheng Shi between 1996 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Wensheng Shi published across 30 years, from 1996 to 2025, averaging 6 papers a year. Output peaked at 11 publications in 2000. 20 of the 181 publications appeared in the last two years.

No. of publications
2 4 6 8 10
Bar chart. Horizontal axis: year, 1996 to 2025. Vertical axis: number of publications, 0 to 11. Peak 11 publications in 2000. 1996: 2 publications 1997: 0 publications 1998: 2 publications 1999: 3 publications 2000: 11 publications 2001: 9 publications 2002: 8 publications 2003: 6 publications 2004: 8 publications 2005: 5 publications 2006: 2 publications 2007: 3 publications 2008: 5 publications 2009: 5 publications 2010: 7 publications 2011: 8 publications 2012: 9 publications 2013: 6 publications 2014: 8 publications 2015: 2 publications 2016: 2 publications 2017: 9 publications 2018: 10 publications 2019: 9 publications 2020: 6 publications 2021: 3 publications 2022: 6 publications 2023: 7 publications 2024: 10 publications 2025: 10 publications
1996 2025

181 publications in total across all disciplines

View publications per year as a table
Wensheng Shi: publications per year, 1996 to 2025
Year Publications
1996 2
1997 0
1998 2
1999 3
2000 11
2001 9
2002 8
2003 6
2004 8
2005 5
2006 2
2007 3
2008 5
2009 5
2010 7
2011 8
2012 9
2013 6
2014 8
2015 2
2016 2
2017 9
2018 10
2019 9
2020 6
2021 3
2022 6
2023 7
2024 10
2025 10
Total 181
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Wensheng Shi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wensheng Shi sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 150–169 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 152 publications — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835 152
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Wensheng Shi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wensheng Shi sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 44–45 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 44 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612 44
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Wensheng Shi is affiliated with the Chinese Academy of Sciences in China and has contributed extensively to research in engineering, materials science, and energy.

The scientist's recent publications cover a range of topics in advanced materials and energy conversion. Notable papers include:

  • Amorphous Co-Mo-P-O Bifunctional Electrocatalyst via Facile Electrodeposition for Overall Water Splitting (2020), published in ACS Sustainable Chemistry & Engineering
  • Sensitive and Stable Thermometer Based on the Long Fluorescence Lifetime of Au Nanoclusters for Mitochondria (2021), published in Analytical Chemistry
  • Ultrahigh Modulation Enhancement in All-Optical Si-Based THz Modulators Integrated with Gold Nanobipyramids (2022), published in Nano Letters
  • Electrochemical surface reconstructed Ptx(x=2,3)Si/PtSi/p-Si photocathodes for achieving high efficiency in photoelectrochemical H2 generation (2022), published in Journal of Materials Chemistry A
  • Metal Silicidation in Conjunction with Dopant Segregation: A Promising Strategy for Fabricating High-Performance Silicon-Based Photoanodes (2020), published in ACS Applied Materials & Interfaces

Frequent coauthors working alongside Wensheng Shi include:

  • Guangwei She
  • Lixuan Mu
  • Tong Cai
  • Jiacheng Yu
  • Yuan Wang

Prominent publication venues where the scientist has contributed multiple works are:

  • Analytical Chemistry
  • ACS Chemical Neuroscience
  • ACS Applied Materials & Interfaces
  • SSRN Electronic Journal
  • ACS Sustainable Chemistry & Engineering

Wensheng Shi's research focuses on several main fields of study:

  • Engineering
  • Materials Science
  • Energy

The subfields of study include:

  • Renewable Energy, Sustainability and the Environment
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Molecular Biology

The main topics addressed in their work involve:

  • Electrocatalysts for Energy Conversion
  • Advanced Photocatalysis Techniques
  • Advanced biosensing and bioanalysis techniques
  • Advanced battery technologies research
  • Advanced Nanomaterials in Catalysis
  • CO2 Reduction Techniques and Catalysts
  • Nanocluster Synthesis and Applications

Best Publications

  • Large-Scale, Solution-Phase Growth of Single-Crystalline SnO2 Nanorods

    Bin Cheng;Joette M Russell;Wensheng Shi;Lei Zhang

  • Oriented silicon carbide nanowires: Synthesis and field emission properties

    Zhengwei Pan;Hau-Ling Lai;Frederick C. K. Au;Xioafeng Duan

  • Synthesis of Large Areas of Highly Oriented, Very Long Silicon Nanowires

    Wen-Sheng Shi;Hong-Ying Peng;Yu-Feng Zheng;Ning Wang;Ning Wang

  • Laser Ablation Synthesis and Optical Characterization of Silicon Carbide Nanowires

    Wensheng Shi;Yufeng Zheng;Hongying Peng;Ning Wang

  • Surface-Enhanced Raman Scattering (SERS) on transition metal and semiconductor nanostructures.

    Xiaotian Wang;Wensheng Shi;Guangwei She;Lixuan Mu

  • Controlled synthesis of oriented single-crystal ZnO nanotube arrays on transparent conductive substrates

    Guang-Wei She;Xiao-Hong Zhang;Wen-Sheng Shi;Xia Fan

  • Using Si and Ge nanostructures as substrates for surface-enhanced Raman scattering based on photoinduced charge transfer mechanism.

    Xiaotian Wang;Wensheng Shi;Guangwei She;Lixuan Mu

  • A General Synthetic Route to III-V Compound Semiconductor Nanowires**

    Wensheng Shi;Yufeng Zheng;Ning Wang;Ning Wang;Chun-Sing Lee

  • Free-standing single crystal silicon nanoribbons.

    Wensheng Shi;Hongying Peng;Ning Wang;Chi Pui Li

  • Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition

    H.Y Peng;X.T Zhou;N Wang;Y.F Zheng

  • Silicon nanowires-based fluorescence sensor for Cu(II).

    Lixuan Mu;Wensheng Shi;Jack C. Chang;Shuit-Tong Lee

  • Single‐Crystal Organic Microtubes with a Rectangular Cross Section

    Xiujuan Zhang;Xiaohong Zhang;Wensheng Shi;Xiangmin Meng

  • High-performance surface-enhanced Raman scattering sensors based on Ag nanoparticles-coated Si nanowire arrays for quantitative detection of pesticides

    X. T. Wang;W. S. Shi;G. W. She;L. X. Mu

  • Enhancement of the light emissions from zinc oxide films by controlling the post-treatment ambient

    W. S. Shi;O. Agyeman;C. N. Xu

  • Electrochemical/chemical synthesis of highly-oriented single-crystal ZnO nanotube arrays on transparent conductive substrates

    Guangwei She;Xiaohong Zhang;Wensheng Shi;Xia Fan

  • Microstructures of gallium nitride nanowires synthesized by oxide-assisted method

    W.S. Shi;Y.F. Zheng;N. Wang;C.S. Lee

  • Electrochemical synthesis of CdS/ZnO nanotube arrays with excellent photoelectrochemical properties

    Xiaopeng Qi;Guangwei She;Yunyu Liu;Lixuan Mu

  • Synthesis of Variable-Aspect-Ratio, Single-Crystalline ZnO Nanostructures

    Bin Cheng;Wensheng Shi;Joette M Russell-Tanner;Lei Zhang

  • Morphology-controllable synthesis of pyrene nanostructures and its morphology dependence of optical properties.

    Xiujuan Zhang;Xiaohong Zhang;Wensheng Shi;Xiangmin Meng

  • Coaxial three-layer nanocables synthesized by combining laser ablation and thermal evaporation

    W. S. Shi;H. Y. Peng;L. Xu;N. Wang;N. Wang

Frequent Co-Authors

Shuit-Tong Lee
Shuit-Tong Lee Macau University of Science and Technology
Ning Wang
Ning Wang Hong Kong University of Science and Technology
Chun-Sing Lee
Chun-Sing Lee City University of Hong Kong
Chao-Nan Xu
Chao-Nan Xu National Institute of Advanced Industrial Science and Technology
Xiaohong Zhang
Xiaohong Zhang Soochow University
Yufeng Zheng
Yufeng Zheng Peking University
Xiang-Min Meng
Xiang-Min Meng Chinese Academy of Sciences
Edward T. Samulski
Edward T. Samulski University of North Carolina at Chapel Hill
Xing Huang
Xing Huang ETH Zurich
Huibin Lu
Huibin Lu Chinese Academy of Sciences

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