P. Moens

P. Moens publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where P. Moens sits on this spectrum.

P. Moens D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where P. Moens sits on this spectrum.

Best Publications

• “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

  Michael J. Uren;Serge Karboyan;Indranil Chatterjee;Alexander Pooth

  250
  Citations

• Hot-carrier degradation phenomena in lateral and vertical DMOS transistors

  P. Moens;G. Van den bosch;G. Groeseneken

  188
  Citations

• Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

  Matteo Meneghini;Piet Vanmeerbeek;Riccardo Silvestri;Stefano Dalcanale

  143
  Citations

• Characterization of Total Safe Operating Area of Lateral DMOS Transistors

  P. Moens;G. Van den bosch

  142
  Citations

• Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

  I. Rossetto;M. Meneghini;A. Tajalli;S. Dalcanale

  136
  Citations

• On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

  P. Moens;P. Vanmeerbeek;A. Banerjee;J. Guo

  127
  Citations

• Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

  Matteo Meneghini;Alaleh Tajalli;Peter Moens;Abhishek Banerjee

  109
  Citations

• An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

  Unknown

  105
  Citations

• Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

  Arno Stockman;Fabrizio Masin;Matteo Meneghini;Enrico Zanoni

  103
  Citations

• Hot hole degradation effects in lateral nDMOS transistors

  P. Moens;G. Van den bosch;C. De Keukeleire;R. Degraeve

  101
  Citations

• Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

  P. Moens;A. Banerjee;M. J. Uren;M. Meneghini

  91
  Citations

• A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors

  P. Moens;J. Mertens;F. Bauwens;P. Joris

  90
  Citations

• An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

  N. E. Posthuma;S. You;S. Stoffels;D. Wellekens

  89
  Citations

• A novel hot-hole injection degradation model for lateral nDMOS transistors

  P. Moens;M. Tack;R. Degraeve;G. Groeseneken

  79
  Citations

• XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit

  P. Moens;F. Bauwens;J. Baele;K. Vershinin

  77
  Citations

• Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

  Michael J. Uren;Markus Caesar;Serge Karboyan;Peter Moens

  77
  Citations

• Competing hot carrier degradation mechanisms in lateral n-type DMOS transistors

  P. Moens;G. Van den Bosch;G. Groeseneken

  56
  Citations

• I3T80: a 0.35 /spl mu/m based system-on-chip technology for 42 V battery automotive applications

  P. Moens;D. Bolognesi;L. Delobel;D. Villanueva

  54
  Citations

• Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

  Arno Stockman;Eleonora Canato;Matteo Meneghini;Gaudenzio Meneghesso

  48
  Citations

• On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

  A. Stockman;E. Canato;A. Tajalli;M. Meneghini

  47
  Citations