P. Moens

Best Publications

• “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

  Michael J. Uren;Serge Karboyan;Indranil Chatterjee;Alexander Pooth

  250
  Citations

• Hot-carrier degradation phenomena in lateral and vertical DMOS transistors

  P. Moens;G. Van den bosch;G. Groeseneken

  188
  Citations

• Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

  Matteo Meneghini;Piet Vanmeerbeek;Riccardo Silvestri;Stefano Dalcanale

  143
  Citations

• Characterization of Total Safe Operating Area of Lateral DMOS Transistors

  P. Moens;G. Van den bosch

  142
  Citations

• Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

  I. Rossetto;M. Meneghini;A. Tajalli;S. Dalcanale

  136
  Citations

• On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

  P. Moens;P. Vanmeerbeek;A. Banerjee;J. Guo

  127
  Citations

• Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

  Matteo Meneghini;Alaleh Tajalli;Peter Moens;Abhishek Banerjee

  109
  Citations

• An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

  Unknown

  105
  Citations

• Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

  Arno Stockman;Fabrizio Masin;Matteo Meneghini;Enrico Zanoni

  103
  Citations

• Hot hole degradation effects in lateral nDMOS transistors

  P. Moens;G. Van den bosch;C. De Keukeleire;R. Degraeve

  101
  Citations

• Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

  P. Moens;A. Banerjee;M. J. Uren;M. Meneghini

  91
  Citations

• A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors

  P. Moens;J. Mertens;F. Bauwens;P. Joris

  90
  Citations

• An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

  N. E. Posthuma;S. You;S. Stoffels;D. Wellekens

  89
  Citations

• A novel hot-hole injection degradation model for lateral nDMOS transistors

  P. Moens;M. Tack;R. Degraeve;G. Groeseneken

  79
  Citations

• XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit

  P. Moens;F. Bauwens;J. Baele;K. Vershinin

  77
  Citations

• Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

  Michael J. Uren;Markus Caesar;Serge Karboyan;Peter Moens

  77
  Citations

• Competing hot carrier degradation mechanisms in lateral n-type DMOS transistors

  P. Moens;G. Van den Bosch;G. Groeseneken

  56
  Citations

• I3T80: a 0.35 /spl mu/m based system-on-chip technology for 42 V battery automotive applications

  P. Moens;D. Bolognesi;L. Delobel;D. Villanueva

  54
  Citations

• Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

  Arno Stockman;Eleonora Canato;Matteo Meneghini;Gaudenzio Meneghesso

  48
  Citations

• On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

  A. Stockman;E. Canato;A. Tajalli;M. Meneghini

  47
  Citations