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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 41 12643 12229 2893 2691 215 11919

Nasim Alem publications per year

The chart shows the history of publications by Nasim Alem between 2005 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Nasim Alem published across 21 years, from 2005 to 2025, averaging 10.9 papers a year. Output peaked at 28 publications in 2021. 35 of the 229 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 2005 to 2025. Vertical axis: number of publications, 0 to 28. Peak 28 publications in 2021. 2005: 1 publication 2006: 3 publications 2007: 2 publications 2008: 2 publications 2009: 1 publication 2010: 6 publications 2011: 4 publications 2012: 5 publications 2013: 3 publications 2014: 7 publications 2015: 7 publications 2016: 12 publications 2017: 11 publications 2018: 22 publications 2019: 20 publications 2020: 25 publications 2021: 28 publications 2022: 20 publications 2023: 15 publications 2024: 23 publications 2025: 12 publications
2005 2025

229 publications in total across all disciplines

View publications per year as a table
Nasim Alem: publications per year, 2005 to 2025
Year Publications
2005 1
2006 3
2007 2
2008 2
2009 1
2010 6
2011 4
2012 5
2013 3
2014 7
2015 7
2016 12
2017 11
2018 22
2019 20
2020 25
2021 28
2022 20
2023 15
2024 23
2025 12
Total 229
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Nasim Alem publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Nasim Alem sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 210–229 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 215 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862 215
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Nasim Alem D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Nasim Alem sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 40–41 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 41 D-Index — 2nd percentile

2% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211 41
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Nasim Alem is affiliated with Pennsylvania State University in the United States and conducts research primarily within the fields of Materials Science and Engineering. Their work spans various subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, as well as Mechanical Engineering.

The scientist has contributed extensively to topics related to 2D materials and their applications, ZnO doping and properties, Ga2O3 and related materials, electronic and structural properties of oxides, MXene and MAX phase materials, magnetic and transport properties of perovskites and related materials, and graphene research and applications.

Frequent publication venues for Nasim Alem's work include:

  • Microscopy and Microanalysis
  • arXiv (Cornell University)
  • Nature Communications
  • ACS Nano
  • Advanced Science

Several coauthors have collaborated repeatedly with Nasim Alem, including Leixin Miao, Saiphaneendra Bachu, Danielle Reifsnyder Hickey, Joan M. Redwing, and Sai Venkata Gayathri Ayyagari, each contributing to multiple joint publications.

Representative recent papers authored or coauthored by Nasim Alem are:

  • Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire, 2021, ACS Nano
  • Monolayer Vanadium-Doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor, 2020, Advanced Science
  • Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films, 2021, Journal of Applied Physics
  • Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire, 2023, Nature Nanotechnology
  • Controllable p-Type Doping of 2D WSe2 via Vanadium Substitution, 2021, Advanced Functional Materials

Best Publications

  • Recent Advances in Two-Dimensional Materials beyond Graphene

    Ganesh R. Bhimanapati;Zhenqiu Lin;Vincent Meunier;Vincent Meunier;Yeonwoong Jung

  • Determination of the Local Chemical Structure of Graphene Oxide and Reduced Graphene Oxide

    Kris Erickson;Rolf Erni;Zonghoon Lee;Nasim Alem

  • Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy

    Nasim Alem;Rolf Erni;Rolf Erni;Christian Kisielowski;Christian Kisielowski;Marta D. Rossell;Marta D. Rossell

  • A direct transfer of layer-area graphene

    William Regan;William Regan;Nasim Alem;Benjamín Alemán;Benjamín Alemán;Baisong Geng;Baisong Geng

  • High-Performance Polymers Sandwiched with Chemical Vapor Deposited Hexagonal Boron Nitrides as Scalable High-Temperature Dielectric Materials

    Amin Azizi;Matthew R. Gadinski;Qi Li;Mohammed Abu AlSaud

  • Topochemical Deintercalation of Al from MoAlB: Stepwise Etching Pathway, Layered Intergrowth Structures, and Two-Dimensional MBene

    Lucas T. Alameda;Parivash Moradifar;Zachary P. Metzger;Nasim Alem

  • Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator MnB i 2 T e 4

    Seng Huat Lee;Yanglin Zhu;Yanglin Zhu;Yu Wang;Leixin Miao

  • Benzene-derived carbon nanothreads

    Thomas C. Fitzgibbons;Malcolm Guthrie;En Shi Xu;Vincent H. Crespi

  • Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire

    Xiaotian Zhang;Tanushree Holme Choudhury;Mikhail Chubarov;Yu Xiang

  • Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride

    Ashley L. Gibb;Nasim Alem;Nasim Alem;Jian Hao Chen;Jian Hao Chen;Kristopher J. Erickson;Kristopher J. Erickson

  • Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide

    Amin Azizi;Xiaolong Zou;Peter Ercius;Zhuhua Zhang

  • Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire.

    Mikhail Chubarov;Tanushree H. Choudhury;Danielle Reifsnyder Hickey;Saiphaneendra Bachu

  • Low-temperature Synthesis of Heterostructures of Transition Metal Dichalcogenide Alloys (WxMo1–xS2) and Graphene with Superior Catalytic Performance for Hydrogen Evolution

    Yu Lei;Srimanta Pakhira;Kazunori Fujisawa;Xuyang Wang

  • Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides.

    Amin Azizi;Sarah Eichfeld;Gayle Geschwind;Kehao Zhang

  • Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$

    Seng Huat Lee;Yanglin Zhu;Yu Wang;Leixin Miao

  • Wafer-scale growth of VO2 thin films using a combinatorial approach.

    Hai Tian Zhang;Lei Zhang;Debangshu Mukherjee;Yuan Xia Zheng

  • Giant room temperature anomalous Hall effect and tunable topology in a ferromagnetic topological semimetal Co2MnAl

    Peigang Li;Jahyun Koo;Wei Ning;Jinguo Li

  • Longitudinal Splitting of Boron Nitride Nanotubes for the Facile Synthesis of High Quality Boron Nitride Nanoribbons

    Kris J. Erickson;Kris J. Erickson;Ashley L. Gibb;Ashley L. Gibb;Alexander Sinitskii;Michael Rousseas

  • Monolayer Vanadium-Doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor.

    Fu Zhang;Boyang Zheng;Amritanand Sebastian;David H. Olson

  • Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers

    Xiaotian Zhang;Fu Zhang;Yuanxi Wang;Daniel S. Schulman

  • Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

    Jian-Hao Chen;Jian-Hao Chen;Gabriel Autès;Nasim Alem;Nasim Alem;Fernando Gargiulo

  • Transfer-Free Batch Fabrication of Large-Area Suspended Graphene Membranes

    Benjamín Alemán;Benjamín Alemán;William Regan;William Regan;Shaul Aloni;Virginia Altoe

  • Multi-Step Topochemical Pathway to Metastable Mo2AlB2 and Related Two-Dimensional Nanosheet Heterostructures.

    Lucas T. Alameda;Robert W. Lord;Jordan A. Barr;Parivash Moradifar

Frequent Co-Authors

Alex Zettl
Alex Zettl University of California, Berkeley
Vincent H. Crespi
Vincent H. Crespi Pennsylvania State University
Venkatraman Gopalan
Venkatraman Gopalan Pennsylvania State University
Joan M. Redwing
Joan M. Redwing Pennsylvania State University
John V. Badding
John V. Badding Pennsylvania State University
Mauricio Terrones
Mauricio Terrones Pennsylvania State University
Steven G. Louie
Steven G. Louie University of California, Berkeley
Ana Laura Elías
Ana Laura Elías Binghamton University
Thomas E. Mallouk
Thomas E. Mallouk University of Pennsylvania
Christian Kisielowski
Christian Kisielowski Lawrence Berkeley National Laboratory

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