World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
3439
World Ranking
6641
National Ranking
2163

Best Publications

  • A charge-sheet model of the MOSFET

    Unknown

  • Generalized guide for MOSFET miniaturization

    Unknown

  • SEGR and SEB in n-channel power MOSFETs

    M. Allenspach;C. Dachs;G.H. Johnson;R.D. Schrimpf

  • Measuring the effective channel length of MOSFETs

    Unknown

  • Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression

    J.L. Titus;C.F. Wheatley;D.I. Burton;I. Mouret

  • Rapid interface parameterization using a single MOS conductance curve

    Unknown

  • A conceptual model of a single-event gate-rupture in power MOSFETs

    J.R. Brews;M. Allenspach;R.D. Schrimpf;K.F. Galloway

  • The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping

    S.C. Witczak;K.F. Galloway;R.D. Schrimpf;J.L. Titus

  • Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFET

    Unknown

  • Surface Potential Fluctuations Generated by Interface Charge Inhomogeneities in MOS Devices

    Unknown

  • Transmission line models for lossy waveguide interconnections in VLSI

    Unknown

  • Evaluation of SEGR threshold in power MOSFETs

    M. Allenspach;J.R. Brews;I. Mouret;R.D. Schrimpf

  • Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependence

    M. Allenspach;I. Mouret;J.L. Titus;C.F. Wheatley

  • Physics of the MOS Transistor

    Unknown

  • Theory of the carrier-density fluctuations in an IGFET near threshold

    Unknown

  • Characteristic Impedance of Microstrip Lines

    Unknown

  • Measurements and modeling of intrinsic fluctuations in MOSFET threshold voltage

    Ali Keshavarzi;Gerhard Schrom;Stephen Tang;Sean Ma

  • Carrier-density fluctuations and the IGFET mobility near threshold

    Unknown

  • Temperature and angular dependence of substrate response in SEGR [power MOSFET]

    I. Mouret;M. Allenspach;R.D. Schrimpf;J.R. Brews

  • Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs

    J.L. Titus;C.F. Wheatley;M. Allenspach;R.D. Schrimpf

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