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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 49 10402 10045 26 25 176 12172

Hongzhou Zhang publications per year

The chart shows the history of publications by Hongzhou Zhang between 1998 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Hongzhou Zhang published across 28 years, from 1998 to 2025, averaging 7.4 papers a year. Output peaked at 14 publications in 2015. 10 of the 206 publications appeared in the last two years.

No. of publications
5 10
Bar chart. Horizontal axis: year, 1998 to 2025. Vertical axis: number of publications, 0 to 14. Peak 14 publications in 2015. 1998: 3 publications 1999: 8 publications 2000: 5 publications 2001: 1 publication 2002: 1 publication 2003: 2 publications 2004: 12 publications 2005: 6 publications 2006: 8 publications 2007: 7 publications 2008: 7 publications 2009: 1 publication 2010: 8 publications 2011: 10 publications 2012: 13 publications 2013: 12 publications 2014: 13 publications 2015: 14 publications 2016: 12 publications 2017: 12 publications 2018: 13 publications 2019: 9 publications 2020: 2 publications 2021: 1 publication 2022: 5 publications 2023: 11 publications 2024: 3 publications 2025: 7 publications
1998 2025

206 publications in total across all disciplines

View publications per year as a table
Hongzhou Zhang: publications per year, 1998 to 2025
Year Publications
1998 3
1999 8
2000 5
2001 1
2002 1
2003 2
2004 12
2005 6
2006 8
2007 7
2008 7
2009 1
2010 8
2011 10
2012 13
2013 12
2014 13
2015 14
2016 12
2017 12
2018 13
2019 9
2020 2
2021 1
2022 5
2023 11
2024 3
2025 7
Total 206
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Hongzhou Zhang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Hongzhou Zhang sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 170–189 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 176 publications — 22nd percentile

22% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850 176
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Hongzhou Zhang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Hongzhou Zhang sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 48–49 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598 49
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Hongzhou Zhang is a researcher affiliated with Trinity College Dublin in Ireland, working primarily in the fields of Engineering and Materials Science. Their work covers several subfields, including Materials Chemistry, Electrical and Electronic Engineering, Computational Mechanics, Mechanical Engineering, and Biomedical Engineering.

The scientist has focused on several research topics, notably:

  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Graphene Research and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Advancements in Battery Materials
  • Fluid Dynamics and Heat Transfer
  • Fluid Dynamics and Turbulent Flows

Zhang's publication record includes a range of peer-reviewed papers published across various scientific journals and venues. Some recent papers include:

  • "Alkali-activated fly ash cured with pulsed microwave and thermal oven: A comparison of reaction products, microstructure and compressive strength," 2023, Cement and Concrete Research
  • "Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications," 2021, ACS Applied Electronic Materials
  • "Study of the thickness of the liquid film formed by a round water jet impinging on a curved cylindrical wall," 2023, Physics of Fluids
  • "Interface structure and strain controlled Pt nanocrystals grown at side facet of MoS2 with critical size," 2022, Nano Research
  • "Semi-empirical model for the liquid fuel film formed by an oblique jet impinging on a curved wall," 2023, Experimental Thermal and Fluid Science

The scientist frequently publishes in venues such as Nano Research, arXiv (Cornell University), Cement and Concrete Research, ACS Applied Electronic Materials, and Physics of Fluids.

Collaborations have been a consistent feature of Zhang's research activities. Frequent co-authors include:

  • Samuel Aldana
  • Jakub Jadwiszczak
  • Weiwei Yuan
  • Yong Huang
  • Wei Liu

Hongzhou Zhang's body of work spans a range of experimental and theoretical investigations, with particular emphasis on material properties, electronic devices, and fluid dynamics phenomena. Their multidisciplinary approach bridges engineering applications and materials science challenges.

Best Publications

  • Amorphous silica nanowires: Intensive blue light emitters

    D. P. Yu;Q. L. Hang;Y. Ding;H. Z. Zhang

  • Ultrafast Saturable Absorption of Two-Dimensional MoS2 Nanosheets

    Kangpeng Wang;Jun Wang;Jintai Fan;Mustafa Lotya

  • Efficient field emission from ZnO nanoneedle arrays

    Y. W. Zhu;H. Z. Zhang;X. C. Sun;S. Q. Feng

  • Nanoscale silicon wires synthesized using simple physical evaporation

    D. P. Yu;Z. G. Bai;Y. Ding;Q. L. Hang

  • Large-scale mechanical peeling of boron nitride nanosheets by low-energy ball milling

    Lu Hua Li;Ying Chen;Gavin Behan;Hongzhou Zhang

  • Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions.

    Ya-Qing Bie;Zhi-Min Liao;Hong-Zhou Zhang;Guang-Ru Li

  • Ga2O3 nanowires prepared by physical evaporation

    H.Z. Zhang;Y.C. Kong;Y.Z. Wang;X. Du

  • Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects

    Rong-ping Wang;Guang-wen Zhou;Yu-long Liu;Shao-hua Pan

  • Morphological effects on the field emission of ZnO nanorod arrays

    Q. Zhao;H. Z. Zhang;Y. W. Zhu;S. Q. Feng

  • Nano-scale GeO2 wires synthesized by physical evaporation

    Z.G. Bai;D.P. Yu;H.Z. Zhang;Y. Ding

  • Surface effects on photoluminescence of single ZnO nanowires

    Zhi-Min Liao;Hong-Zhou Zhang;Yang-Bo Zhou;Jun Xu

  • Nanopatterning and Electrical Tuning of MoS2 Layers with a Subnanometer Helium Ion Beam.

    Daniel S. Fox;Yangbo Zhou;Pierce Maguire;Arlene O’Neill

  • Tunable nonlinear refractive index of two-dimensional MoS 2 , WS 2 , and MoSe 2 nanosheet dispersions [Invited]

    Gaozhong Wang;Saifeng Zhang;Xiaoyan Zhang;Long Zhang

  • Luminescence emission originating from nitrogen doping of β-Ga 2 O 3 nanowires

    Y. P. Song;H. Z. Zhang;C. Lin;Y. W. Zhu

  • Facile Growth of Caterpillar-like NiCo2S4 Nanocrystal Arrays on Nickle Foam for High-Performance Supercapacitors.

    Xiaojuan Chen;Di Chen;Xuyun Guo;Rongming Wang

  • MoO3 nanoparticles dispersed uniformly in carbon matrix: a high capacity composite anode for Li-ion batteries

    Tao Tao;Tao Tao;Alexey M. Glushenkov;Chaofeng Zhang;Hongzhou Zhang

  • Porous nanotubes of Co3O4: Synthesis, characterization, and magnetic properties

    R. M. Wang;C. M. Liu;H. Z. Zhang;C. P. Chen

  • Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

    B. Xiang;H. Z. Zhang;G. H. Li;F. H. Yang

  • Field-emission properties of TiO2 nanowire arrays

    B Xiang;Y Zhang;Z Wang;X H Luo

  • MoS 2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

    Jakub Jadwiszczak;Darragh Keane;Pierce Maguire;Conor P Cullen

  • Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate

    Qing Zhao;Hongzhou Zhang;Xiangyu Xu;Zhe Wang

Frequent Co-Authors

Dapeng Yu
Dapeng Yu Peking University
Ying Chen
Ying Chen Deakin University
Rongming Wang
Rongming Wang University of Science and Technology Beijing
Georg S. Duesberg
Georg S. Duesberg Bundeswehr University Munich
Igor V. Shvets
Igor V. Shvets Trinity College Dublin
Zhi-Min Liao
Zhi-Min Liao Peking University
Jonathan N. Coleman
Jonathan N. Coleman Trinity College Dublin
Niall McEvoy
Niall McEvoy Trinity College Dublin
Bin Xiang
Bin Xiang University of Science and Technology of China
John J. Boland
John J. Boland Trinity College Dublin

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