World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
49
Citations
12172
World Ranking
10402
National Ranking
26

Hongzhou Zhang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Hongzhou Zhang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 176 publications — 22nd percentile

22% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Hongzhou Zhang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Hongzhou Zhang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Hongzhou Zhang is a researcher affiliated with Trinity College Dublin in Ireland, working primarily in the fields of Engineering and Materials Science. Their work covers several subfields, including Materials Chemistry, Electrical and Electronic Engineering, Computational Mechanics, Mechanical Engineering, and Biomedical Engineering.

The scientist has focused on several research topics, notably:

  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Graphene Research and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Advancements in Battery Materials
  • Fluid Dynamics and Heat Transfer
  • Fluid Dynamics and Turbulent Flows

Zhang's publication record includes a range of peer-reviewed papers published across various scientific journals and venues. Some recent papers include:

  • "Alkali-activated fly ash cured with pulsed microwave and thermal oven: A comparison of reaction products, microstructure and compressive strength," 2023, Cement and Concrete Research
  • "Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications," 2021, ACS Applied Electronic Materials
  • "Study of the thickness of the liquid film formed by a round water jet impinging on a curved cylindrical wall," 2023, Physics of Fluids
  • "Interface structure and strain controlled Pt nanocrystals grown at side facet of MoS2 with critical size," 2022, Nano Research
  • "Semi-empirical model for the liquid fuel film formed by an oblique jet impinging on a curved wall," 2023, Experimental Thermal and Fluid Science

The scientist frequently publishes in venues such as Nano Research, arXiv (Cornell University), Cement and Concrete Research, ACS Applied Electronic Materials, and Physics of Fluids.

Collaborations have been a consistent feature of Zhang's research activities. Frequent co-authors include:

  • Samuel Aldana
  • Jakub Jadwiszczak
  • Weiwei Yuan
  • Yong Huang
  • Wei Liu

Hongzhou Zhang's body of work spans a range of experimental and theoretical investigations, with particular emphasis on material properties, electronic devices, and fluid dynamics phenomena. Their multidisciplinary approach bridges engineering applications and materials science challenges.

Best Publications

  • Amorphous silica nanowires: Intensive blue light emitters

    D. P. Yu;Q. L. Hang;Y. Ding;H. Z. Zhang

  • Ultrafast Saturable Absorption of Two-Dimensional MoS2 Nanosheets

    Kangpeng Wang;Jun Wang;Jintai Fan;Mustafa Lotya

  • Efficient field emission from ZnO nanoneedle arrays

    Y. W. Zhu;H. Z. Zhang;X. C. Sun;S. Q. Feng

  • Nanoscale silicon wires synthesized using simple physical evaporation

    D. P. Yu;Z. G. Bai;Y. Ding;Q. L. Hang

  • Large-scale mechanical peeling of boron nitride nanosheets by low-energy ball milling

    Lu Hua Li;Ying Chen;Gavin Behan;Hongzhou Zhang

  • Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions.

    Ya-Qing Bie;Zhi-Min Liao;Hong-Zhou Zhang;Guang-Ru Li

  • Ga2O3 nanowires prepared by physical evaporation

    H.Z. Zhang;Y.C. Kong;Y.Z. Wang;X. Du

  • Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects

    Rong-ping Wang;Guang-wen Zhou;Yu-long Liu;Shao-hua Pan

  • Morphological effects on the field emission of ZnO nanorod arrays

    Q. Zhao;H. Z. Zhang;Y. W. Zhu;S. Q. Feng

  • Nano-scale GeO2 wires synthesized by physical evaporation

    Z.G. Bai;D.P. Yu;H.Z. Zhang;Y. Ding

  • Surface effects on photoluminescence of single ZnO nanowires

    Zhi-Min Liao;Hong-Zhou Zhang;Yang-Bo Zhou;Jun Xu

  • Nanopatterning and Electrical Tuning of MoS2 Layers with a Subnanometer Helium Ion Beam.

    Daniel S. Fox;Yangbo Zhou;Pierce Maguire;Arlene O’Neill

  • Tunable nonlinear refractive index of two-dimensional MoS 2 , WS 2 , and MoSe 2 nanosheet dispersions [Invited]

    Gaozhong Wang;Saifeng Zhang;Xiaoyan Zhang;Long Zhang

  • Luminescence emission originating from nitrogen doping of β-Ga 2 O 3 nanowires

    Y. P. Song;H. Z. Zhang;C. Lin;Y. W. Zhu

  • Facile Growth of Caterpillar-like NiCo2S4 Nanocrystal Arrays on Nickle Foam for High-Performance Supercapacitors.

    Xiaojuan Chen;Di Chen;Xuyun Guo;Rongming Wang

  • MoO3 nanoparticles dispersed uniformly in carbon matrix: a high capacity composite anode for Li-ion batteries

    Tao Tao;Tao Tao;Alexey M. Glushenkov;Chaofeng Zhang;Hongzhou Zhang

  • Porous nanotubes of Co3O4: Synthesis, characterization, and magnetic properties

    R. M. Wang;C. M. Liu;H. Z. Zhang;C. P. Chen

  • Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

    B. Xiang;H. Z. Zhang;G. H. Li;F. H. Yang

  • Field-emission properties of TiO2 nanowire arrays

    B Xiang;Y Zhang;Z Wang;X H Luo

  • MoS 2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

    Jakub Jadwiszczak;Darragh Keane;Pierce Maguire;Conor P Cullen

  • Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate

    Qing Zhao;Hongzhou Zhang;Xiangyu Xu;Zhe Wang

Frequent Co-Authors

Dapeng Yu
Dapeng Yu Peking University
Ying Chen
Ying Chen Deakin University
Rongming Wang
Rongming Wang University of Science and Technology Beijing
Georg S. Duesberg
Georg S. Duesberg Bundeswehr University Munich
Igor V. Shvets
Igor V. Shvets Trinity College Dublin
Zhi-Min Liao
Zhi-Min Liao Peking University
Jonathan N. Coleman
Jonathan N. Coleman Trinity College Dublin
Niall McEvoy
Niall McEvoy Trinity College Dublin
Bin Xiang
Bin Xiang University of Science and Technology of China
John J. Boland
John J. Boland Trinity College Dublin

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