His scientific interests lie mostly in Ellipsometry, Silicon, Optics, Optoelectronics and Refractive index. His Ellipsometry study combines topics from a wide range of disciplines, such as Dielectric, Molar absorptivity, Analytical chemistry and Polarization modulation. Gerald Earle Jellison Jr has researched Silicon in several fields, including Polarization, Chemical vapor deposition and Density of states.
His studies examine the connections between Density of states and genetics, as well as such issues in Semiconductor materials, with regards to Condensed matter physics. His study in the fields of Spectroscopic ellipsometry, Mueller calculus and Anisotropy under the domain of Optics overlaps with other disciplines such as Bias of an estimator. His work is dedicated to discovering how Optoelectronics, Oxide are connected with Cobaltite, Ferroelectricity, Mott insulator and Bismuth and other disciplines.
His primary areas of investigation include Optics, Ellipsometry, Silicon, Analytical chemistry and Optoelectronics. As part of the same scientific family, Gerald Earle Jellison Jr usually focuses on Optics, concentrating on Dielectric and intersecting with Composite material and Condensed matter physics. While the research belongs to areas of Ellipsometry, Gerald Earle Jellison Jr spends his time largely on the problem of Band gap, intersecting his research to questions surrounding Electronic structure.
Within one scientific family, Gerald Earle Jellison Jr focuses on topics pertaining to Laser under Silicon, and may sometimes address concerns connected to Irradiation. His research on Analytical chemistry also deals with topics like
Gerald Earle Jellison Jr spends much of his time researching Optics, Analytical chemistry, Optoelectronics, Doping and Dielectric. His research in Optics intersects with topics in Ellipsometry, Anti-reflective coating and Microstructure. His biological study spans a wide range of topics, including Microscope, Birefringence, Transmission, Molecular physics and Monoclinic crystal system.
In the subject of general Analytical chemistry, his work in Luminescence is often linked to X-ray crystallography, thereby combining diverse domains of study. In his work, Nanotechnology, Semiconductor materials, Plasma lamp and Composite number is strongly intertwined with Laser, which is a subfield of Optoelectronics. His studies deal with areas such as Composite material and Ceramic as well as Dielectric.
His primary scientific interests are in Optics, Condensed matter physics, Dielectric, Ellipsometry and Band gap. He does research in Optics, focusing on Refractive index specifically. In general Condensed matter physics study, his work on Electronic band structure often relates to the realm of Ferroics, thereby connecting several areas of interest.
Gerald Earle Jellison Jr combines subjects such as Transmission and Birefringence with his study of Ellipsometry. His Band gap study improves the overall literature in Optoelectronics. His Single crystal research focuses on Analytical chemistry and how it connects with Inorganic chemistry.
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Parameterization of the optical functions of amorphous materials in the interband region
G. E. Jellison;F. A. Modine.
Applied Physics Letters (1996)
A Stable Thin‐Film Lithium Electrolyte: Lithium Phosphorus Oxynitride
Xiaohua Yu;J. B. Bates;G. E. Jellison;F. X. Hart.
Journal of The Electrochemical Society (1997)
Data analysis for spectroscopic ellipsometry
G.E. Jellison.
Thin Solid Films (1993)
Optical functions of silicon determined by two-channel polarization modulation ellipsometry
G.E. Jellison.
Optical Materials (1992)
Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures
G. E. Jellison;F. A. Modine.
Applied Physics Letters (1982)
Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry
G. E. Jellison;M. F. Chisholm;S. M. Gorbatkin.
Applied Physics Letters (1993)
Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures
G.E. Jellison;F.A. Modine.
Physical Review B (1983)
Spectroscopic ellipsometry of thin film and bulk anatase (TiO2)
G. E. Jellison;L. A. Boatner;J. D. Budai;B.-S. Jeong.
Journal of Applied Physics (2003)
Determinations of structure and bonding in vitreous B2O3 by means of B10, B11, and O17 NMR
G. E. Jellison;L. W. Panek;P. J. Bray;G. B. Rouse.
Journal of Chemical Physics (1977)
Optical functions of uniaxial ZnO determined by generalized ellipsometry
G. E. Jellison;L. A. Boatner.
Physical Review B (1998)
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