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Gerald Earle Jellison Jr

Gerald Earle Jellison Jr

D-Index & Metrics

Materials Science

D-Index
49
Citations
13479
World Ranking
10390
National Ranking
2468

Gerald Earle Jellison Jr publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gerald Earle Jellison Jr sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 188 publications — 26th percentile

26% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Gerald Earle Jellison Jr D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gerald Earle Jellison Jr sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Optics
  • Semiconductor
  • Refractive index

His scientific interests lie mostly in Ellipsometry, Silicon, Optics, Optoelectronics and Refractive index. His Ellipsometry study combines topics from a wide range of disciplines, such as Dielectric, Molar absorptivity, Analytical chemistry and Polarization modulation. Gerald Earle Jellison Jr has researched Silicon in several fields, including Polarization, Chemical vapor deposition and Density of states.

His studies examine the connections between Density of states and genetics, as well as such issues in Semiconductor materials, with regards to Condensed matter physics. His study in the fields of Spectroscopic ellipsometry, Mueller calculus and Anisotropy under the domain of Optics overlaps with other disciplines such as Bias of an estimator. His work is dedicated to discovering how Optoelectronics, Oxide are connected with Cobaltite, Ferroelectricity, Mott insulator and Bismuth and other disciplines.

His most cited work include:

  • Parameterization of the optical functions of amorphous materials in the interband region (1739 citations)
  • A Stable Thin‐Film Lithium Electrolyte: Lithium Phosphorus Oxynitride (631 citations)
  • Data analysis for spectroscopic ellipsometry (273 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optics, Ellipsometry, Silicon, Analytical chemistry and Optoelectronics. As part of the same scientific family, Gerald Earle Jellison Jr usually focuses on Optics, concentrating on Dielectric and intersecting with Composite material and Condensed matter physics. While the research belongs to areas of Ellipsometry, Gerald Earle Jellison Jr spends his time largely on the problem of Band gap, intersecting his research to questions surrounding Electronic structure.

Within one scientific family, Gerald Earle Jellison Jr focuses on topics pertaining to Laser under Silicon, and may sometimes address concerns connected to Irradiation. His research on Analytical chemistry also deals with topics like

  • Crystallite most often made with reference to Amorphous solid,
  • Inorganic chemistry and related Oxide. His Thin film research includes themes of Silicon nitride, Chemical vapor deposition, Epitaxy and Scanning electron microscope.

He most often published in these fields:

  • Optics (38.54%)
  • Ellipsometry (35.94%)
  • Silicon (28.13%)

What were the highlights of his more recent work (between 2008-2018)?

  • Optics (38.54%)
  • Analytical chemistry (27.60%)
  • Optoelectronics (27.08%)

In recent papers he was focusing on the following fields of study:

Gerald Earle Jellison Jr spends much of his time researching Optics, Analytical chemistry, Optoelectronics, Doping and Dielectric. His research in Optics intersects with topics in Ellipsometry, Anti-reflective coating and Microstructure. His biological study spans a wide range of topics, including Microscope, Birefringence, Transmission, Molecular physics and Monoclinic crystal system.

In the subject of general Analytical chemistry, his work in Luminescence is often linked to X-ray crystallography, thereby combining diverse domains of study. In his work, Nanotechnology, Semiconductor materials, Plasma lamp and Composite number is strongly intertwined with Laser, which is a subfield of Optoelectronics. His studies deal with areas such as Composite material and Ceramic as well as Dielectric.

Between 2008 and 2018, his most popular works were:

  • Wide bandgap tunability in complex transition metal oxides by site-specific substitution. (168 citations)
  • Magnetic behavior and spin-lattice coupling in cleavable van der Waals layered CrCl 3 crystals (120 citations)
  • Monolithic graded-refractive-index glass-based antireflective coatings: broadband/omnidirectional light harvesting and self-cleaning characteristics (43 citations)

In his most recent research, the most cited papers focused on:

  • Optics
  • Semiconductor
  • Refractive index

His primary scientific interests are in Optics, Condensed matter physics, Dielectric, Ellipsometry and Band gap. He does research in Optics, focusing on Refractive index specifically. In general Condensed matter physics study, his work on Electronic band structure often relates to the realm of Ferroics, thereby connecting several areas of interest.

Gerald Earle Jellison Jr combines subjects such as Transmission and Birefringence with his study of Ellipsometry. His Band gap study improves the overall literature in Optoelectronics. His Single crystal research focuses on Analytical chemistry and how it connects with Inorganic chemistry.

Best Publications

  • Parameterization of the optical functions of amorphous materials in the interband region

    G. E. Jellison;F. A. Modine

  • A Stable Thin‐Film Lithium Electrolyte: Lithium Phosphorus Oxynitride

    Xiaohua Yu;J. B. Bates;G. E. Jellison;F. X. Hart

  • Magnetic behavior and spin-lattice coupling in cleavable van der Waals layered CrCl 3 crystals

    Michael A. McGuire;Genevieve Clark;Santosh Kc;W. Michael Chance;W. Michael Chance

  • Optical functions of silicon determined by two-channel polarization modulation ellipsometry

    G.E. Jellison

  • Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures

    G. E. Jellison;F. A. Modine

  • Spectroscopic ellipsometry of thin film and bulk anatase (TiO2)

    G. E. Jellison;L. A. Boatner;J. D. Budai;B.-S. Jeong

  • Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry

    G. E. Jellison;M. F. Chisholm;S. M. Gorbatkin

  • Wide bandgap tunability in complex transition metal oxides by site-specific substitution.

    Woo Seok Choi;Matthew F Chisholm;David J Singh;Taekjib Choi

  • Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures

    G. E. Jellison;F. A. Modine

  • Determinations of structure and bonding in vitreous B2O3 by means of B10, B11, and O17 NMR

    G. E. Jellison;L. W. Panek;P. J. Bray;G. B. Rouse

  • Optical functions of uniaxial ZnO determined by generalized ellipsometry

    G. E. Jellison;L. A. Boatner

  • Optical functions of silicon at elevated temperatures

    G. E. Jellison;F. A. Modine

  • Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry

    G.E. Jellison

  • Two-modulator generalized ellipsometry: experiment and calibration

    G E Jellison;F A Modine

  • Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometry

    G. E. Jellison;F. A. Modine

  • A structural interpretation of B10 and B11 NMR spectra in sodium borate glasses

    G.E. Jellison;P.J. Bray

  • Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics.

    Parag Doshi;Gerald E. Jellison;Ajeet Rohatgi

  • Time-resolved reflectivity measurements on silicon and germanium using a pulsed excimer KrF laser heating beam.

    G. E. Jellison;D. H. Lowndes;D. N. Mashburn;R. F. Wood

  • Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry

    G.E. Jellison;V.I. Merkulov;A.A. Puretzky;D.B. Geohegan

  • Interface stability and the growth of optical quality perovskites on MgO.

    R. A. McKee;F. J. Walker;E. D. Specht;G. E. Jellison

Frequent Co-Authors

Douglas H. Lowndes
Douglas H. Lowndes Oak Ridge National Laboratory
Lynn A. Boatner
Lynn A. Boatner Oak Ridge National Laboratory
David B. Geohegan
David B. Geohegan Oak Ridge National Laboratory
Alexander A. Puretzky
Alexander A. Puretzky Oak Ridge National Laboratory
David J. Singh
David J. Singh University of Missouri
Michael L. Simpson
Michael L. Simpson University of Tennessee at Knoxville
Ilia N. Ivanov
Ilia N. Ivanov Oak Ridge National Laboratory
Christopher M. Rouleau
Christopher M. Rouleau Oak Ridge National Laboratory
John D. Budai
John D. Budai Oak Ridge National Laboratory
Hans M. Christen
Hans M. Christen Oak Ridge National Laboratory

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