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Materials Science

D-Index
66
Citations
14125
World Ranking
5422
National Ranking
1413

Overview

George H. Gilmer was affiliated with the Colorado School of Mines in the United States. Their academic career involved research activities connected to this institution.

No recent papers, co-authors, publication venues, book publications, main or subfields of study, main topics of work, or awards have been documented in the available data for George H. Gilmer.

Best Publications

  • Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    P. A. Stolk;H.-J. Gossmann;D. J. Eaglesham;D. C. Jacobson

  • Dynamics of Crystal Growth

    John D. Weeks;George H. Gilmer

  • Simulation of Crystal Growth with Surface Diffusion

    Unknown

  • Crystallization Rates of a Lennard-Jones Liquid

    J. Q. Broughton;G. H. Gilmer;K. A. Jackson

  • Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain.

    Y. H. Xie;G. H. Gilmer;C. Roland;P. J. Silverman

  • Molecular dynamics investigation of the crystal–fluid interface. I. Bulk properties

    Jeremy Q. Broughton;George H. Gilmer

  • Molecular dynamics of surface diffusion. I. The motion of adatoms and clusters

    John C. Tully;George H. Gilmer;Mary Shugard

  • Ion-beam processing of silicon at keV energies: A molecular-dynamics study.

    M. J. Caturla;T. Diaz de la Rubia;Luis A. Marqués;G. H. Gilmer

  • An atomistic simulator for thin film deposition in three dimensions

    Hanchen Huang;George H. Gilmer;Tomas Dı́az de la Rubia

  • B diffusion and clustering in ion implanted Si: The role of B cluster precursors

    Lourdes Pelaz;M. Jaraiz;G. H. Gilmer;H. J. Gossmann

  • Ab initio pseudopotential calculations of B diffusion and pairing in Si

    Jing Zhu;Tomas Diaz dela Rubia;L. H. Yang;Christian Mailhiot

  • Structural transformations and defect production in ion implanted silicon: a molecular dynamics simulation study

    T. Diaz de la Rubia;G. H. Gilmer

  • Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    M. Jaraiz;G. H. Gilmer;J. M. Poate;T. D. de la Rubia

  • Molecular-dynamics study of melting in two dimensions. Inverse-twelfth-power interaction

    Jeremy Q. Broughton;George H. Gilmer;John D. Weeks

  • Rethinking Classical Crystal Growth Models through Molecular Scale Insights: Consequences of Kink-Limited Kinetics

    J. J. De Yoreo;L. A. Zepeda-Ruiz;R. W. Friddle;R. W. Friddle;S. R. Qiu

  • Simulation of cluster evaporation and transient enhanced diffusion in silicon

    C. S. Rafferty;G. H. Gilmer;M. Jaraiz;D. Eaglesham

  • Thin film deposition: fundamentals and modeling

    G.H. Gilmer;Hanchen Huang;Christopher Roland

  • An analysis of combined surface and volume diffusion processes in crystal growth

    Unknown

  • Diffusion and interactions of point defects in silicon: molecular dynamics simulations

    G.H. Gilmer;T. Diaz de la Rubia;D.M. Stock;M. Jaraiz

  • Thin film growth modes, wetting and cluster nucleation

    Marcia H. Grabow;George H. Gilmer

  • Growth on imperfect crystal faces. I. Monte-Carlo growth rates

    G.H. Gilmer

  • Computer simulation of crystal surface structure and growth kinetics

    Unknown

  • Lattice Monte Carlo models of thin film deposition

    George H. Gilmer;Hanchen Huang;Tomas Diaz de la Rubia;Jacques Dalla Torre

Frequent Co-Authors

T. Diaz de la Rubia
T. Diaz de la Rubia University of Oklahoma
Eduardo M. Bringa
Eduardo M. Bringa National University of Cuyo
John M. Poate
John M. Poate Nokia (United States)
John C. C. Fan
John C. C. Fan Kopin Corporation (United States)
Alex V. Hamza
Alex V. Hamza Lawrence Livermore National Laboratory
Vasily V. Bulatov
Vasily V. Bulatov Lawrence Livermore National Laboratory
Eric Chason
Eric Chason Brown University
Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey
Ivan Petrov
Ivan Petrov University of Illinois at Urbana-Champaign

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