World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
45
Citations
11785
World Ranking
11603
National Ranking
64

Qingxiao Wang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Qingxiao Wang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 154 publications — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Qingxiao Wang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Qingxiao Wang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Qingxiao Wang is affiliated with King Abdullah University of Science and Technology in Saudi Arabia. Their research spans across multiple disciplines within materials science and engineering, reflecting an extensive involvement in advanced materials and their applications.

The primary fields of study for Qingxiao Wang include:

  • Materials Science
  • Engineering

Their work is further specialized in several subfields:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering
  • Renewable Energy, Sustainability and the Environment

Qingxiao Wang's research covers a range of topics, with notable focus areas that include:

  • Advanced Photocatalysis Techniques
  • 2D Materials and Applications
  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Graphene research and applications
  • Semiconductor materials and devices
  • Perovskite Materials and Applications

Recent published papers demonstrate the scope and diversity of their contributions:

  • "Nickel-Platinum Nanoparticles as Peroxidase Mimics with a Record High Catalytic Efficiency," 2021, Journal of the American Chemical Society
  • "Oriented lateral growth of two-dimensional materials on c-plane sapphire," 2023, Nature Nanotechnology
  • "Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle," 2020, Science Advances
  • "Role of surface steps in activation of surface oxygen sites on Ir nanocrystals for oxygen evolution reaction in acidic media," 2021, Applied Catalysis B: Environmental
  • "Strain-Engineered Anisotropic Optical and Electrical Properties in 2D Chiral-Chain Tellurium," 2020, Advanced Materials

Qingxiao Wang frequently publishes in specific scientific venues, including:

  • Advanced Materials
  • Journal of the American Chemical Society
  • Microscopy and Microanalysis
  • Nature Communications
  • Nano Letters

Collaboration is a significant aspect of their research. Frequent co-authors include:

  • Moon J. Kim
  • Xixiang Zhang
  • Tien Khee Ng
  • Boon S. Ooi
  • Zhenqiang Ma

Best Publications

  • Tuning upconversion through energy migration in core–shell nanoparticles

    Feng Wang;Renren Deng;Juan Wang;Qingxiao Wang

  • MoS2 transistors with 1-nanometer gate lengths

    Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas

  • Field-effect transistors made from solution-grown two-dimensional tellurene

    Yixiu Wang;Gang Qiu;Ruoxing Wang;Shouyuan Huang

  • Doping Monolayer Graphene with Single Atom Substitutions

    Hongtao Wang;Qingxiao Wang;Yingchun Cheng;Kun Li

  • Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

    Angelica Azcatl;Xiaoye Qin;Abhijith Prakash;Chenxi Zhang

  • Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

    K. H. Li;X. Liu;Q. Wang;S. Zhao

  • Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1−xKxFe2As2 superconductors

    Lei Wang;Yanwei Ma;Qingxiao Wang;Kun Li

  • Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

    S. Zhao;A. T. Connie;M. H. T. Dastjerdi;X. H. Kong

  • Site-Specific Growth of Au–Pd Alloy Horns on Au Nanorods: A Platform for Highly Sensitive Monitoring of Catalytic Reactions by Surface Enhancement Raman Spectroscopy

    Jianfeng Huang;Yihan Zhu;Ming Lin;Qingxiao Wang

  • Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals

    Muhammad R. Niazi;Ruipeng Li;Er Qiang Li;Ahmad R. Kirmani

  • Two-dimensional heterostructures of V2O5 and reduced graphene oxide as electrodes for high energy density asymmetric supercapacitors

    Doddahalli H. Nagaraju;Qingxiao Wang;Pierre Beaujuge;Husam N. Alshareef

  • Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1-xKxFe2As2 superconductors

    Lei Wang;Yanwei Ma;Qingxiao Wang;Kun Li

  • Nickel-Platinum Nanoparticles as Peroxidase Mimics with a Record High Catalytic Efficiency.

    Zheng Xi;Kecheng Wei;Qingxiao Wang;Moon J Kim

  • Ru Nanoframes with an fcc Structure and Enhanced Catalytic Properties.

    Haihang Ye;Qingxiao Wang;Massimo Catalano;Ning Lu

  • Surface modification-induced phase transformation of hexagonal close-packed gold square sheets

    Zhanxi Fan;Xiao Huang;Yu Han;Michel Bosman

  • Sn surface-enriched Pt-Sn bimetallic nanoparticles as a selective and stable catalyst for propane dehydrogenation

    Haibo Zhu;Dalaver H. Anjum;Qingxiao Wang;Edy Abou-Hamad

  • High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °C

    Yen-Hung Lin;Hendrik Faber;Kui Zhao;Qingxiao Wang

  • Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

    Jing-Kai Qin;Pai-Ying Liao;Mengwei Si;Shiyuan Gao

  • Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing.

    Hui Zhu;Qingxiao Wang;Lanxia Cheng;Rafik Addou

  • Oriented lateral growth of two-dimensional materials on c-plane sapphire

    Unknown

  • Morphological and Electrochemical Cycling Effects in MnO2 Nanostructures by 3D Electron Tomography

    Wei Chen;Raghavan B. Rakhi;Qingxiao Wang;Mohamed N. Hedhili

  • Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

    Pradipta K. Nayak;J. A. Caraveo-Frescas;Zhenwei Wang;Mohamed N. Hedhili

  • Synthesis of ultrathin face-centered-cubic au@pt and au@pd core-shell nanoplates from hexagonal-close-packed au square sheets.

    Zhanxi Fan;Yihan Zhu;Xiao Huang;Yu Han

  • Tailoring Renal Clearance and Tumor Targeting of Ultrasmall Metal Nanoparticles with Particle Density

    Shaoheng Tang;Chuanqi Peng;Jing Xu;Bujie Du

Frequent Co-Authors

Moon J. Kim
Moon J. Kim The University of Texas at Dallas
Xixiang Zhang
Xixiang Zhang King Abdullah University of Science and Technology
Rafik Addou
Rafik Addou The University of Texas at Dallas
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Yu Han
Yu Han King Abdullah University of Science and Technology
Yihan Zhu
Yihan Zhu Zhejiang University of Technology
Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology
Hongtao Wang
Hongtao Wang Zhejiang University
Wenzhuo Wu
Wenzhuo Wu Purdue University West Lafayette
Zetian Mi
Zetian Mi University of Michigan–Ann Arbor

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