World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
6204
World Ranking
5305
National Ranking
103

Best Publications

  • A new method for determining the FET small-signal equivalent circuit

    Unknown

  • Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

    W. Knap;J. Lusakowski;T. Parenty;S. Bollaert

  • Resonant and voltage-tunable terahertz detection in InGaAs /InP nanometer transistors

    A. El Fatimy;F. Teppe;N. Dyakonova;W. Knap

  • Noise modeling and measurement techniques (HEMTs)

    Unknown

  • Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor

    J. Lusakowski;W. Knap;N. Dyakonova;L. Varani

  • Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics

    Unknown

  • Room-temperature terahertz emission from nanometer field-effect transistors

    N. Dyakonova;A. El Fatimy;J. Łusakowski;W. Knap

  • A new method for on wafer noise measurement

    Unknown

  • Terahertz detection by GaN/AlGaN transistors

    A. El Fatimy;S. Boubanga Tombet;F. Teppe;W. Knap

  • Microscopic modeling of nonlinear transport in ballistic nanodevices

    Unknown

  • Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

    N. Dyakonova;F. Teppe;J. Łusakowski;W. Knap

  • Monte Carlo simulator for the design optimization of low-noise HEMTs

    Unknown

  • Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's

    Unknown

  • Imaging and controlling electron transport inside a quantum ring

    Unknown

  • Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

    Unknown

  • Noise modeling in submicrometer-gate two-dimensional electron-gas field-effect transistors

    Unknown

  • Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

    Unknown

  • High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

    G. Dambrine;J.-P. Raskin;F. Danneville;D. Vanhoenackel Janvier

  • Hot Carriers in Semiconductors

    Karl Hess;J. P. Leburton;U. Ravaioli

  • Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]

    Unknown

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